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BT149E

Description
Thyristors logic level
CategoryAnalog mixed-signal IC    Trigger device   
File Size33KB,6 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
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BT149E Overview

Thyristors logic level

BT149E Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknow
Nominal circuit commutation break time50 µs
Maximum DC gate trigger current0.2 mA
Maximum DC gate trigger voltage0.8 V
Maximum holding current5 mA
JESD-609 codee0
Maximum leakage current0.1 mA
On-state non-repetitive peak current8 A
Maximum on-state voltage1.3 V
Maximum on-state current500 A
Maximum operating temperature125 °C
Off-state repetitive peak voltage500 V
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Trigger device typeSCR
Philips Semiconductors
Product specification
Thyristors
logic level
GENERAL DESCRIPTION
Glass passivated, sensitive gate
thyristors in a plastic envelope,
intended for use in general purpose
switching
and
phase
control
applications. These devices are
intended to be interfaced directly to
microcontrollers, logic integrated
circuits and other low power gate
trigger circuits.
BT149 series
QUICK REFERENCE DATA
SYMBOL
V
DRM
,
V
RRM
I
T(AV)
I
T(RMS)
I
TSM
PARAMETER
BT149
Repetitive peak
off-state voltages
Average on-state
current
RMS on-state current
Non-repetitive peak
on-state current
MAX. MAX. MAX. MAX. UNIT
B
200
0.5
0.8
8
D
400
0.5
0.8
8
E
500
0.5
0.8
8
G
600
0.5
0.8
8
V
A
A
A
PINNING - TO92 variant
PIN
1
2
3
DESCRIPTION
cathode
gate
anode
PIN CONFIGURATION
SYMBOL
a
k
3 2 1
g
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
-
half sine wave;
T
lead
83 ˚C
all conduction angles
t = 10 ms
t = 8.3 ms
half sine wave;
T
j
= 25 ˚C prior to surge
t = 10 ms
I
TM
= 2 A; I
G
= 10 mA;
dI
G
/dt = 100 mA/µs
-
-
-
-
-
-
-
-
-
-
-
-40
-
B
200
1
MAX.
D
400
1
0.5
0.8
8
9
0.32
50
1
5
5
2
0.1
150
125
E
500
1
G
600
1
UNIT
V
A
A
A
A
A
2
s
A/µs
A
V
V
W
W
˚C
˚C
V
DRM
, V
RRM
Repetitive peak off-state
voltages
I
T(AV)
I
T(RMS)
I
TSM
Average on-state current
RMS on-state current
Non-repetitive peak
on-state current
I
2
t
dI
T
/dt
I
GM
V
GM
V
RGM
P
GM
P
G(AV)
T
stg
T
j
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak reverse gate voltage
Peak gate power
Average gate power
over any 20 ms period
Storage temperature
Operating junction
temperature
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
September 1997
1
Rev 1.200

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