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YG971S8R

Description
5 A, 800 V, SILICON, RECTIFIER DIODE, TO-220AC
Categorysemiconductor    Discrete semiconductor   
File Size457KB,7 Pages
ManufacturerFUJI
Websitehttp://www.fujielectric.co.jp/eng/fdt/scd/
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YG971S8R Overview

5 A, 800 V, SILICON, RECTIFIER DIODE, TO-220AC

http://www.fujisemi.com
YG971S8R
Low-Loss Fast Recovery Diode
Maximum Rating and Characteristics
Maximum ratings (at Ta=25˚C unless otherwise specified.)
Item
Repetitive peak reverse voltage
Isolating voltage
Average forward current
Non-repetitive forward surge current
Operating junction temperature
Storage temperature
Symbols
V
RRM
V
iso
I
FAV
I
FSM
Tj
Tstg
Conditions
-
Terminals-to-case, AC.1min
50Hz Square wave duty =1/2
Tc = 93˚C
Sine wave, 10ms 1shot
-
-
Ratings
800
1500
5
60
150
-40 to +150
FUJI Diode
Units
V
V
A
A
˚C
˚C
Electrical characteristics
Item
Forward voltage
Reverse current
Reverse recovery time
Thermal resistance
(at Ta=25˚C unless otherwise specified.)
Symbols
V
F
I
R
trr
Rth(j-c)
I
F
=5 A
V
R
=V
RRM
I
F
=0.1A, I
R
=0.2A, Irec =0.05A
Junction to case
Conditions
Maximum
2.2
10
50
4.5
Units
V
µA
µS
˚C/W
Mechanical characteristics
Item
Mounting torque
Approximate mass
Conditions
Recommended torque
-
Maximum
0.3 to 0.5
1.7
Units
N•m
g
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