Z04
Standard
4 A Triacs
Main features
A2
Symbol
I
T(RMS)
V
DRM
/V
RRM
I
GT (Q
1
)
Value
4
600 to 800
3 to 25
Unit
A
V
mA
G
A1
Description
The
Z04
series is suitable for general purpose AC
switching applications. They can be found in
applications such as home appliances
(electrovalve, pump, door lock, small lamp
control), fan speed controllers,...
Different gate current sensitivities are available,
allowing optimized performances when controlled
directly from microcontrollers.
A1
A2
G
TO202-3
Order codes
Part Number
Z04xxyF
(1)
1. xx = sensitivity, y = voltage
Marking
Z04xxyF
(1)
Table 1.
Symbol
I
T(RMS)
Absolute maximum ratings
Parameter
RMS on-state current (full sine wave)
Non repetitive surge peak on-state current
(full cycle, T
j
initial = 25° C)
I
²
t Value for fusing
F = 50 Hz
F = 60 Hz
t
p
= 10 ms
T
j
= 125° C
T
j
= 125° C
T
j
= 125° C
T
amb
= 25° C
T
l
= 30° C
t = 20 ms
t = 16.7 ms
20
A
21
2.2
20
1.2
0.2
- 40 to + 150
- 40 to + 125
A
²
s
A/µs
A
W
°C
Value
4
Unit
A
I
TSM
I
²
t
dI/dt
I
GM
P
G(AV)
T
stg
T
j
Critical rate of rise of on-state current I
G
=
F = 120 Hz
2 x I
GT
, t
r
≤
100 ns
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
t
p
= 20 µs
May 2006
Rev 7
1/8
www.st.com
8
Characteristics
Z04
1
Characteristics
Table 2.
Symbol
Electrical Characteristics (Tj = 25° C, unless otherwise specified)
Z04
Test Conditions
Quadrant
02
05
5
1.3
0.2
3
6
12
10
0.5
5
10
15
20
1
10
15
25
100
2
25
25
mA
50
200
5
V/µs
V/µs
09
10
10
25
mA
V
V
mA
MAX
.
MAX
.
MIN.
MAX
.
I - III - IV
MAX
.
MIN.
MIN.
Unit
I
GT (1)
V
D
= 12 V R
L
= 30
Ω
V
GT
V
GD
I
H (2)
I
L
dV/dt
(2)
V
D
= V
DRM
R
L
= 3.3 kΩ
T
j
= 125° C
I
T
= 50 mA
I
G
= 1.2 I
GT
I - II - III - IV
ALL
ALL
3
II
V
D
= 6 % V
DRM
gate open T
j
= 110° C
T
j
= 110° C
(dV/dt)c
(2)
(dI/dt)c = 1.8 A/ms
1. minimum IGT is guaranted at 5% of IGT max.
2. for both polarities of A2 referenced to A1.
Table 3.
Symbol
V
TM (1)
V
to (1)
R
d (1)
I
DRM
I
RRM
Static Characteristics
Test Conditions
I
TM
= 5.5 A
t
p
= 380 µs
T
j
= 25° C
T
j
= 125° C
T
j
= 125° C
T
j
= 25° C
T
j
= 125° C
MAX.
MAX.
MAX.
MAX.
0.5
mA
Value
2.0
0.95
180
5
Unit
V
V
mΩ
µA
Threshold voltage
Dynamic resistance
V
DRM
= V
RRM
1. for both polarities of A2 referenced to A1.
Table 4.
Symbol
R
th(j-I)
R
th(j-a)
Thermal resistances
Parameter
Junction to lead (AC)
Junction to ambient
Value
15
100
Unit
° C/W
° C/W
2/8
Z04
Characteristics
Figure 1.
Maximum power dissipation
versus RMS on-state current
(full cycle)
Figure 2.
RMS on-state current versus
ambient temperature (full cycle)
P(W)
7
6
5
4
3
2
1.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
I
T(RMS)
(A)
R
th(j-a)
= R
th(j-l)
R
th(j-a)
= 100°C/W
1
I
T(RMS)
(A)
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.5
0.0
0
25
50
T
amb
(°C)
75
100
125
Figure 3.
Relative variation of thermal
impedance versus pulse
duration
Figure 4.
Relative variation of gate trigger
current, holding current and
latching current versus junction
temperature (typical values)
K=[Z
th(j-a)
/R
th(j-a)]
1E+0
2.5
I
GT
, I
H
, I
L
[T
j
] / I
GT
, I
H
, I
L
[T
j
=25°C]
2.0
1E-1
1.5
I
H
& I
L
I
GT
1.0
1E-2
0.5
1E-3
1E-3
1E-2
1E-1
t
p
(s)
0.0
T
j
(°C)
1E+1
1E+2
5E+2
-40
-20
0
20
40
60
80
100
120
140
1E+0
Figure 5.
Surge peak on-state current
versus number of cycles
Figure 6.
Non-repetitive surge peak on-state
current for a sinusoidal pulse with
width t
p
< 10 ms and corresponding
value of I
2
t
I
TSM
(A)
25
500
I
TSM
(A), I
2
t (A
2
s)
T
j
initial = 25°C
20
t=20ms
One cycle
100
dI/dt limitation:
20A/µs
I
TSM
15
Non repetitive
T
j
initial = 25°C
10
Repetitive
T
amb
= 25°C
10
5
I
2
t
0
1
Number of cycles
10
100
1000
t
p
(ms)
1
0.01
0.10
1.00
10.00
3/8
Characteristics
Z04
Figure 7.
On-state characteristics
(maximum values)
Figure 8.
Relative variation of critical rate of
decrease of main current versus
(dV/dt)c (typical values)
I
TM
(A)
20.0
10.0
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
T
j
= T
j
max.
Z0410
1.0
T
j
= 25°C
Z0409
Z0402
Z0405
V
TM
(V)
0.1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
T
j
=max.
V
t0
=0.95 V
R
d
=180 m
Ω
(dV/dt)c (V/µs)
0.1
1.0
10.0
100.0
4.5
5.0
Figure 9.
Relative variation of critical
rate of decrease of main current
versus junction temperature
(dI/dt)c [T
j
] / (dI/dt)c [T
j
Specified]
6
5
4
3
2
1
T
j
(°C)
0
0
25
50
75
100
125
4/8
Z04
Ordering information scheme
2
Ordering information scheme
Z 04 xx y F
Triac series
Current
04 = 4A
Sensitivity
02 = 3mA
05 = 5mA
09 = 10mA
10 = 25mA
Voltage
M = 600V
S = 700V
N = 800V
Package
F = TO202-3
Packing mode
0AA2 = Tube
[BLANK]
0AA2
Table 5.
Product selector
Voltage
Sensitivity
600 V 700 V 800 V
X
X
X
X
X
X
X
X
X
X
X
X
3 mA
3 mA
3 mA
5 mA
5 mA
5 mA
Standard
TO202-3
10 mA
10 mA
10 mA
25 mA
25 mA
25 mA
Type
Package
Part Number
Z0402MF
Z0402SF
Z0402NF
Z0405MF
Z0405SF
Z0405NF
Z0409MF
Z0409SF
Z0409NF
Z0410MF
Z0410SF
Z0410NF
5/8
Embedded System
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