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BT168E

Description
Thyristors logic level for RCD/ GFI/ LCCB applications
CategoryAnalog mixed-signal IC    Trigger device   
File Size33KB,6 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Environmental Compliance
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BT168E Overview

Thyristors logic level for RCD/ GFI/ LCCB applications

BT168E Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknow
Nominal circuit commutation break time100 µs
Critical rise rate of minimum off-state voltage25 V/us
Maximum DC gate trigger current0.2 mA
Maximum DC gate trigger voltage0.8 V
Maximum holding current5 mA
JESD-609 codee3
Maximum leakage current0.1 mA
On-state non-repetitive peak current8 A
Maximum on-state voltage1.35 V
Maximum on-state current500 A
Maximum operating temperature125 °C
Off-state repetitive peak voltage500 V
surface mountNO
Terminal surfaceMatte Tin (Sn)
Trigger device typeSCR
Philips Semiconductors
Product specification
Thyristors
logic level for RCD/ GFI/ LCCB applications
GENERAL DESCRIPTION
Glass passivated, sensitive gate
thyristors in a plastic envelope,
intended for use in Residual Current
Devices/ Ground Fault Interrupters/
Leakage Current Circuit Breakers
(RCD/ GFI/ LCCB)
applications
where a minimum I
GT
limit is needed.
These devices may be interfaced
directly to microcontrollers, logic
integrated circuits and other low
power gate trigger circuits.
BT168 series
QUICK REFERENCE DATA
SYMBOL
V
DRM
,
V
RRM
I
T(AV)
I
T(RMS)
I
TSM
PARAMETER
BT168
Repetitive peak
off-state voltages
Average on-state
current
RMS on-state current
Non-repetitive peak
on-state current
MAX. MAX. MAX. MAX. UNIT
B
200
0.5
0.8
8
D
400
0.5
0.8
8
E
500
0.5
0.8
8
G
600
0.5
0.8
8
V
A
A
A
PINNING - TO92 variant
PIN
1
2
3
DESCRIPTION
anode
gate
cathode
PIN CONFIGURATION
SYMBOL
a
k
3 2 1
g
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
-
half sine wave;
T
lead
83 ˚C
all conduction angles
t = 10 ms
t = 8.3 ms
half sine wave;
T
j
= 25 ˚C prior to surge
t = 10 ms
I
TM
= 2 A; I
G
= 10 mA;
dI
G
/dt = 100 mA/µs
-
-
-
-
-
-
-
-
-
-
-
-40
-
B
200
1
MAX.
D
400
1
0.5
0.8
8
9
0.32
50
1
5
5
2
0.1
150
125
E
500
1
G
600
1
UNIT
V
A
A
A
A
A
2
s
A/µs
A
V
V
W
W
˚C
˚C
V
DRM
, V
RRM
Repetitive peak off-state
voltages
I
T(AV)
I
T(RMS)
I
TSM
Average on-state current
RMS on-state current
Non-repetitive peak
on-state current
I
2
t
dI
T
/dt
I
GM
V
GM
V
RGM
P
GM
P
G(AV)
T
stg
T
j
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak reverse gate voltage
Peak gate power
Average gate power
over any 20 ms period
Storage temperature
Operating junction
temperature
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
September 1997
1
Rev 1.100

BT168E Related Products

BT168E BT168 BT168B BT168D BT168G
Description Thyristors logic level for RCD/ GFI/ LCCB applications Thyristors logic level for RCD/ GFI/ LCCB applications Thyristors logic level for RCD/ GFI/ LCCB applications Thyristors logic level for RCD/ GFI/ LCCB applications Thyristors logic level for RCD/ GFI/ LCCB applications
Is it Rohs certified? conform to - incompatible incompatible conform to
Maker Philips Semiconductors (NXP Semiconductors N.V.) - Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code unknow - unknow unknow unknow
Nominal circuit commutation break time 100 µs - 100 µs 100 µs 100 µs
Critical rise rate of minimum off-state voltage 25 V/us - 25 V/us 25 V/us 25 V/us
Maximum DC gate trigger current 0.2 mA - 0.2 mA 0.2 mA 0.2 mA
Maximum DC gate trigger voltage 0.8 V - 0.8 V 0.8 V 0.8 V
Maximum holding current 5 mA - 5 mA 5 mA 5 mA
JESD-609 code e3 - e0 e0 e3
Maximum leakage current 0.1 mA - 0.1 mA 0.1 mA 0.1 mA
On-state non-repetitive peak current 8 A - 8 A 8 A 8 A
Maximum on-state voltage 1.35 V - 1.35 V 1.35 V 1.35 V
Maximum on-state current 500 A - 500 A 500 A 500 A
Maximum operating temperature 125 °C - 125 °C 125 °C 125 °C
Off-state repetitive peak voltage 500 V - 200 V 400 V 600 V
surface mount NO - NO NO NO
Terminal surface Matte Tin (Sn) - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Matte Tin (Sn)
Trigger device type SCR - SCR SCR SCR
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