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BT300-800R

Description
Thyristors
CategoryAnalog mixed-signal IC    Trigger device   
File Size34KB,6 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Download Datasheet Parametric Compare View All

BT300-800R Overview

Thyristors

BT300-800R Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknow
Nominal circuit commutation break time70 µs
Critical rise rate of minimum off-state voltage50 V/us
Maximum DC gate trigger current0.015 mA
Maximum DC gate trigger voltage1.5 V
Maximum holding current20 mA
JESD-609 codee0
Maximum leakage current0.5 mA
On-state non-repetitive peak current65 A
Maximum on-state voltage1.5 V
Maximum on-state current5000 A
Maximum operating temperature125 °C
Off-state repetitive peak voltage600 V
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Trigger device typeSCR
Philips Semiconductors
Product specification
Thyristors
BT300 series
GENERAL DESCRIPTION
Glass passivated thyristors in a plastic
envelope, intended for use in
applications
requiring
high
bidirectional
blocking
voltage
capability and high thermal cycling
performance. Typical applications
include motor control, industrial and
domestic lighting, heating and static
switching.
QUICK REFERENCE DATA
SYMBOL
V
DRM
,
V
RRM
I
T(AV)
I
T(RMS)
I
TSM
PARAMETER
BT300-
Repetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak on-state
current
MAX. MAX. MAX. UNIT
500R
500
5
8
65
600R
600
5
8
65
800R
800
5
8
65
V
A
A
A
PINNING - TO220AB
PIN
1
2
3
tab
DESCRIPTION
cathode
anode
gate
anode
PIN CONFIGURATION
tab
SYMBOL
a
k
1 23
g
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
-
half sine wave; T
mb
111 ˚C
all conduction angles
half sine wave; T
j
= 25 ˚C prior to
surge
t = 10 ms
t = 8.3 ms
t = 10 ms
I
TM
= 10 A; I
G
= 50 mA;
dI
G
/dt = 50 mA/µs
-
-
-
-
-
-
-
-
-
-
-
-40
-
MAX.
-500R -600R -800R
500
1
600
1
800
5
8
65
71
21
50
2
5
5
5
0.5
150
125
UNIT
V
A
A
A
A
A
2
s
A/µs
A
V
V
W
W
˚C
˚C
V
DRM
, V
RRM
Repetitive peak off-state
voltages
I
T(AV)
I
T(RMS)
I
TSM
Average on-state current
RMS on-state current
Non-repetitive peak
on-state current
I
2
t
dI
T
/dt
I
GM
V
GM
V
RGM
P
GM
P
G(AV)
T
stg
T
j
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak reverse gate voltage
Peak gate power
Average gate power
over any 20 ms period
Storage temperature
Operating junction
temperature
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
September 1997
1
Rev 1.100

BT300-800R Related Products

BT300-800R BT300 BT300-500R BT300-600R
Description Thyristors Thyristors Thyristors Thyristors
Is it Rohs certified? incompatible - incompatible incompatible
Maker Philips Semiconductors (NXP Semiconductors N.V.) - Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code unknow - unknow unknow
Nominal circuit commutation break time 70 µs - 70 µs 70 µs
Critical rise rate of minimum off-state voltage 50 V/us - 50 V/us 50 V/us
Maximum DC gate trigger current 0.015 mA - 0.015 mA 0.015 mA
Maximum DC gate trigger voltage 1.5 V - 1.5 V 1.5 V
Maximum holding current 20 mA - 20 mA 20 mA
JESD-609 code e0 - e0 e0
Maximum leakage current 0.5 mA - 0.5 mA 0.5 mA
On-state non-repetitive peak current 65 A - 65 A 65 A
Maximum on-state voltage 1.5 V - 1.5 V 1.5 V
Maximum on-state current 5000 A - 5000 A 5000 A
Maximum operating temperature 125 °C - 125 °C 125 °C
Off-state repetitive peak voltage 600 V - 500 V 600 V
surface mount NO - NO NO
Terminal surface Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Trigger device type SCR - SCR SCR
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