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2A01G

Description
2 A, 50 V, SILICON, RECTIFIER DIODE, DO-15
Categorysemiconductor    Discrete semiconductor   
File Size567KB,3 Pages
ManufacturerYenyo Technology Co., Ltd.
Websitehttp://www.yenyo.com.tw/
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2A01G Overview

2 A, 50 V, SILICON, RECTIFIER DIODE, DO-15

YENYO
Glass Passivated Standard Rectifier
Voltage Range 50 to 1000 V
Current 2.0 Ampere
DO-15
.034(.86)
.028(.71)
1.0(25.4)
MIN.
DIA.
2A01G THRU 2A07G
Features
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Mechanical Data
Case: Molded plastic DO-15
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208 guaranteed
Polarity:Color band denotes cathode end
Mounting position: Any
Weight: 0.4 gram
.300(7.6)
.230(5.8)
.140(3.6)
1.0(25.4)
MIN.
.104(2.6)
DIA.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
o
C
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
PARAMTER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current T
L
=105
C
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
Maximum Instantaneous Forward Voltage
@ 2.0 A
Maximum DC Reverse Current @T
J
=25
C
o
At Rated DC Blocking Voltage @T
J
=125
C
Typical junction Capacitance (Note 1)
Maximum Thermal Resistance (Note 2)
Operating Junction and Storage
Temperature Range
o
o
SYMBOL 2A01G 2A02G 2A03G 2A04G 2A05G 2A06G 2A07G UNIT
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
100
70
100
200
140
200
400
280
400
2.0
600
420
600
800
560
800
1000
700
1000
V
V
V
A
I
FSM
60
A
V
F
I
R
C
J
R
JA
1.1
5.0
100
20
40
-55 to +150
o
V
uA
uA
pF
C/W
o
T
J
,T
STG
C
NOTES : (1) Thermal Resistance junction to lead.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
1/2
R1, MAY-12

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