20 STERN AVE.
SPRINGFIELD. NEW JERSEY 07081
U.SA
2N2920
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
MECHANICAL DATA
Dimensions in mm (inches)
DUAL NPN
PLANAR TRANSISTORS IN
TO77 PACKAGE
'
'^0.7110.021)
tit
10.034)
TO-77 PACKAGE
PIN 1 - Collector 1
PIN 2 - Base 1
PIN 3 - Emitter 1
PIN 4 - Emitter 2
PIN 5 - Base 2
PIN 6 - Collector 2
ABSOLUTE MAXIMUM RATINGS
V
CBO
VCEO
VEBO
'c
PD
PD
TSTG
T
L
(Tamb = 25°C unless otherwise stated)
Collector - Base Voltage
Collector - Emitter Voltage
1
Emitter- Base Voltage
Continuous Collector Current
Total Device Dissipation
T
AMB
= 25
°
C
Derate above 25°C
Total Device Dissipation
T
c
= 25°C
Derate above 25°C
Storage Temperature Range
Lead temperature (Soldering,
1 0 sec.)
EACH SIDE
TOTAL DEVICE
60V
60V
6V
30
SOOmW
SOOmW
1.72mW/°C
2.86W/°C
750mW
1.5W
4.3mW/°C
8.6mW7°C
-65 to 200°C
300°C
NJ Seini-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by NJ Semi-Conductors is believed to he both accurate and reliable at the time of going {repress. However NJ
Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use HI Semi-Conductors encourages
customers to verify that datasheets are current before placing orders.
ELECTRICAL CHARACTERISTICS
(T
amb
= 25°C unless otherwise stated)
Parameter
Test Conditions
1
Min.
60
60
6
2
10
2
2
150
40
225
300
0.70
0.35
25
32
1
3
6
V
600
—
nA
HA
nA
V
Typ.
Max.
Unit
INDIVIDUAL TRANSISTOR CHARACTERISTICS
l
c
=10nA
V(BR)CBO Collector - Base Breakdown Voltage
V(BR)CEO*
V(BR)EBO
I
CBO
'CEO
I
EB
0
Collector - Emitter Breakdown Voltage l
c
=10mA
Emitter - Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
!
E
=10uA
VCB
=
45V
VCE = 5V
V
EB
=5V
VCE = 5V
I
E
= O
I
B
= 0
l
c
= 0
I
E
= O
T
A
= 150°C
I
B
= 0
l
c
= 0
l
c
= 10uA
h
FE
DC Current Gain
T
A
= -55°C
VCE = 5V
VCE = 5V
VCE = 5V
!
B
=100uA
VCB = 5V
f = 1 kHz
VCB = 5V
f=1kHz
VCE
=
5V
f = 20MHz
V
CB
= 5V
l
c
= 100uA
l
c
= 1mA
V
BE
VcE(sat)
h
ib
h
ob
|h
fe
|
Cobo
Base - Emitter Voltage
Collector - Emitter Saturation Voltage
Small Signal Common - Base
Input Impedance
Small Signal Common - Base
Output Admittance
Small Signal Common - Base
Current Gain
Common - Base Open Circuit
Output Capacitance
l
c
= 100uA
l
c
= 1mA
l
c
= 1mA
l
c
= 1mA
i
c
= 500uA
IE = 0
»
umho
—
PF
f = 140kHz to 1 MHz
* Pulse Test: t
D
= 300us , 8 < 1%.
Parameter
Test Conditions
l
c
= 100uA
l
c
= 100uA
l
c
= 10uAto1mA
l
c
= 100uA
T
A2
= -55°C
l
c
-100uA
T
A2
= 125°C
Min.
Typ.
Max.
Unit
TRANSISTOR MATCHING CHARACTERISTICS
VCE = 5V
h
F
Ei
Static Forward Current Gain
h
FE2
Balance Ratio
See Note 2.
V
CE
= 5V
V
CE
= 5V
V
CE
= 5V
T
A1
= 25°C
V
CE
= 5V
T
A 1
=25°C
0.9
1
3
5
0.8
—
|V
BE
i - V
BE2
| Base - Emitter Voltage Differential
|A(V
BE1
-V
BE2
)AT
A
|
Base - Emitter Voltage Differential
Change With Temperature
mV
mV
1
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