<~!>E.mL-L,onaiLctoi L/^i
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
,
Li
ne,
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
Devices
2N3838
2N4854
2N4854U
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Sym
VCEO
VCBO
VEBO
2N3838®
2N4854, U
40
60
5.0
600
One
Total
Trans
Device
0.60
2.0
Unit
Vdc
Vdc
Vdc
mAdc
Ic
40
60
5.0
600
One
Trans
TO-78*
2N4854
@ T
A
= +25°C
@T
C
=+25°C
(1)
Operating & Storage Junction Temp. Range
Operating & Storage Junction Temp. Range
Total Power Dissipation
PT
Tj
T
sta
0.25'
2
'
07
«)
Total
Devic
e
0.35
0.30
(3
>
1.0'"
1.4
200
-55 to +200
W
W
°C
°C
6 Pin Surface Mount*
2N4854U
Lead to Case Voltage
±120
Vdc
1) T
c
rating do not apply to Surface Mount devices (2N4854U)
2) For T
A
> +25°C Derate linearly 1.43 mW/°C (one transistor) 2.00 mW/°C (both transistors)
3) For T
A
>
+25°C Derate linearly 1 .7 1 mW/°C (one transistor) 3 .43 mW/t (both transistors)
4) For T
c
> +25°C Derate linearly 4.0 mW/°C (one transistor) 8.0 mW/°C (both transistors)
5) For T
c
> +25°C Derate linearly 5.71 mW/°C (one transistor) 1 1,43 mW/°C (both transistors)
I
1
_1
6 Lead Flatpack*
2N3838
•See MILPRF19500/421
for package dimensions.
ELECTRICAL CHARACTERISTICS (T
A
= 2S°C unless otherwise noted)
Characteristics
JJjTnbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current
I
c
= 10 mAdc
Collector-Base Cutoff Current
V
CB
= 60 Vdc
Collector-Base Cutoff Current
VCB = 50 Vdc
Emitter-Base Cutoff Current
VEB = 5.0 Vdc
V
EB
= 3.0 Vdc
V(BR)CEO
IcBO(l)
40
10
50
10
10
10
DC
(oAdc
TjAdc
jjAdc
r)Adc
2N3838
2N4854. U
ICBOO
IEBO
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time ofaoing
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
ELECTRICAL CHARACTERISTICS (con't)
Characteristics
ON CHARACTERISTICS
Forward-Current Transfer Ratio
I
c
= 150 mAdc, V
CE
~ 1 Vdc
I
c
= 100 fjAdo, VCE = 10 Vdc
I
c
= 1.0 mAdc, V
CE
=10 Vdc
I
c
= 10 mAdc, VCE = 10 Vdc
I
c
= 150 mAdc, V
CE
= 10 Vdc
I
c
= 300 mAdc, V
CE
= 10 Vdc
Collector-Emitter Saturation Voltage
I
c
= 150 mAdc, IB = 15 mAdc
Base-Emitter Saturation Voltage
I
c
= 150 mAdc, I
B
= 15 mAdc
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio
I
c
= 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz
Forward Current Transfer Ratio, Magnitude
I
c
= 20 mAdc, VCE = 10 Vdc, f = 100 MHz
Small-Signal Common Emitter Input Impedance
I
c
= 1.0 mAdc, V
CE
" 10 Vdc, f - 1.0 kHz
Small-Signal Common Emitter Output Admittance
I
c
= 1.0 mAdc, VCE = 10 Vdc, f - 1.0 kHz
Output Capacitance
V
CB
= 10 Vdc, I
E
= 0, 100 kHz < f £ 1.0 MHz
Noise Figure
I
c
= 100 (jAdc, V
CE
= 10 Vdc, f = 1.0 kHz, RO =1.0 kQ
SWITCHING CHARACTERISTICS
Turn-On Time
(See Figure 4 of MIL-PRF- 19500/421)
Turn-Off Time
(See Figure 5 of MIL-PRF-19500/421)
Pulse Response
(See Figured of MIL-PRF-19500/421)
Collector-Emitter Non-Latching Voltage
(See Figure 7 of MIL-PRF-19500/421)
Symbol
Min.
Max.
I
Unit
|
hFE
50
35
50
75
35
VcEl'sat)
VBE(sat)
0.40
0.80
1.25
Vdc
Vdc
ha
ha
hie
60
2.0
1.5
300
10
9.0
50
8.0
8.0
kQ
h«
c
obo
(ihmo
P
F
NF
dB
'on
'off
'on + 'off
45
300
18
40
r|s
ns
T|S
VCEO
Vdc
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