U
na.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
Devices
2N5664
2N5665
Devices
2N5666
2N5666S
2N5667
2N5667S
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Symbol
VCEO
VCBO
VEBO
IB
Ic
2N5665
2N5664
2N5666, S 2N5667, S
200
300
250
400
6.0
1.0
5.0
2IN5666, S
2NS664
2N5667, S
2N5665
2.5
(1)
1.2
(2)
30 «>
I5
H)
-65 to +200
Unit
Vdc
Vdc
Vdc
Adc
Adc
TO-66*
2N5664, 2N5665
X-w
ta>
TA
=
+25°C
<aTc=+100
0
C
Operating & Storage Junction Temperature Range
1) Derate linearly 14.3
ra
W/°C for TA
"
+25°C
2) Derate linearly 6.9 mW/°C for T
A
'••
+25°C
3) Derate linearly 300 mW/°C for T
c
>+100°C
4) Derate linearly 1 50 mW/°C for T
c
• +100°C
Total Power Dissipation
PT
Tj. T
s
tg
W
W
TO-5*
2N5666, 2N5667
°C
TO-39*
2N5666S, 2N5667S
*See appendix A for
package outline
|
Min.
Max.
|
I'nit
ELECTRICAL CHARACTERISTICS (Tc
=
25°C unless otherwise noted)
Characteristics
I
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
L
- = 10 mAde
2N5664. 2N5666, S
VfBRXTER
2N5665. 2N5667. S
Emitter-Base Breakdown Voltage
IE = 10 uAdc
V(BR)EBO
Collector-Emitter Cutoff Current
V
CE
= 200 Vdc
2N5664. 2N5666, S
ICES
V
CE
= 300 Vdc
2N5665. 2N5667. S
250
400
6.0
0.2
0.2
Vdc
Vdc
(jAdc
NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
notice information furnished
by
NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. N J
Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
ELECTRICAL CHARACTERISTICS (con't)
Characteristics
Collector-Base Cutoff Current
VCB = 200 Vdc
2N5664, 2N5666, S
VCB = 250 Vdc
VCB = 300 Vdc
2N5665, 2N5667, S
V
CB
= 400 Vdc
ON CHARACTERISTICS
(S)
Forward-Current Transfer Ratio
I
c
= 0.5 Adc. V
CE
= 2.0 Vdc
2N5664, 2N5666, S
2N5665, 2N5667, S
I
c
= 1.0 Adc. VCE = 5.0 Vdc
2N5664, 2N5666, S
2N5665, 2N5667. S
Ic = 3.0 Adc, VCE = 5.0 Vdc
2N5664. 2N5666. S
2N5665, 2N5667, S
I
c
= 5.0 Adc, V
CE
= 5.0 Vdc
All Types
Collector-Emitter Saturation Voltage
I
c
=
3.0 Adc. I
B
= 0.3 Adc
2N5664. 2N5666. S
I
c
= 3.0 Adc. IB = 0.6 Adc
2N5665. 2N5667. S
I
0
= 5.0 Adc, I
B
= 1.0 Adc
All Types
Base-Emitter Saturation Voltage
I
c
= 3.0 Adc, I
B
= 0.3 Adc
2N5664, 2N5666, S
I
c
= 3.0 Adc. IB = 0.6 Adc
2N5665, 2N5667. S
I
c
= 5.0 Adc. IB = 1.0 Adc
All Types
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio
l
c
=
0.5 Adc. VCE = 5.0 Vdc, f = 10 MHz
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz < f < 1.0 MHz
SWITCHING CHARACTERISTICS
Turn-On Time
V
cc
= 100 Vdc: I
c
= 1.0 Adc; I
B
i = 30 mAdc
Turn-Off Time
V
C
o = 30 Vdc; I
c
= 1.0 Adc; I
B]
= -I
B
: = 50 mAdc
2N5664. 2N5666. S
2N5665. 2N5667. S
SAFE OPERATING AREA
DC: Tests
(2N5664 and 2N5665 only)
T
c
= 100°C, 1 Cycle, t > 1.0 s, t
r
+ t
f
= 10 (.is
Testl
Symbol
Min.
Max.
0.1
1.0
0.1
1.0
Unit
(jAdc
mAdc
(jAdc
mAdc
ICBO
HFE
40
25
40
25
15
10
5.0
120
75
VcElsat)
0.4
0.4
1.0
1.2
1.2
1.5
Vdc
V
BE(sat)
Vdc
hfc
Cobo
t
2.0
7.0
120
P
F
on
0.25
f.is
(as
'off
1.5
2.0
V
CE
= 6-0 Vdc, I
c
- 5.0 Adc
VCE = 3.0 Vdc, I
c
= 5.0 Adc
Test 2
VCE = -tO Vdc. I
c
= 0.75 Adc
VCE
"
37.5 Vdc. I
c
= 0.4 Adc
Test 3
V
CE
= 200 Vdc. I
c
= 43 mAdc
V
CE
= 200 Vdc. I
c
= 27 mAdc
Test 4
VCE = 300 Vdc. I
c
= 21 mAdc
VCE = 300 Vdc. I
c
= 14 mAdc
2N5664 and 2N5665
2N5666 and 2N5667
2N5664 and 2N5665
2N5666 and 2N5667
2N5664
2N5666
2N5665
2N5667
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