^E.ml-dona\jictoi Lptoaucti, One..
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
SWTCHMODE SERIES
NPN SILICON POWER TRANSISTORS
These devices are designed for high-voltage,high-speed .power
switching inductive circuits where fall time is critical.they are particu-
larly, suited for 115 and 220 volt line operated SWITCHMODE appli-
cations such as:
* Switching Regulators
* PWM inverters and Motor Controls
* Solenoid and Relay Drivers
* Deflection Circuits
Specification Features-
High Temperature Performance Specified for: Reversed Biased SOA
with inductive loads Switching Times with inductive Loads Saturation
Voltages, Leakage Currents.
MAXIMUM RATINGS
Characteristic
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Base Voltage
Collector current - Continuous
-Peak
Base current - Continuous
Emitter current -Continuous
-Peak
Total Power DissipationeT
c
=25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance Junction to Case
Symbol
Rejc
Symbol
V
CEO(«us)
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
NPN
2N6542
2N6543
5 AMPERE
NPN SILICON
POWER TRANSISTORS
300 - 400 VOLTS
100 WATTS
2N6542
300
650
8.0
2N6643
400
850
Unit
V
V
V
A
A
A
VCEV
VEBO
'c
'CM
5.0
10
5
TO-3
B
IB
IE
'EM
P
D
10
20
100
0.57
- 65 to
+200
c!
W
W/°C
°C
•!
J
A
-
u
H
1
x
, '
Tj |T
8TO
~\:
J
1
1
Max
1.75
Unit
i
DIM
A
B
C
D
E
F
G
H
I
J
K
'X
/
A
4
<£
^ i
' 'K
•
E
°c/w
PIN 1.BASE
2.EMTTTER
COLLECTOR(CASE)
FIGURE -1 POWER DERATING
125
I
|100
X
-
x
MILLIMETERS
MIN
MAX
38.75
19.28
7,96
11.18
3996
22.23
9.28
12.19
I ^
\x
1 50
\
| 25
£
°C)
25
50
75
1OO
125
150
T
c
, TEMPERATVJRE('C)
25.20
0.92
1.38
26.67
1 09
1.62
2990
16.64
3.88
10.67
3040
17.30
4.36
11.18
<
.
175
200
Qualify Semi-Conductors
2N6542, 2N6543 NPN
ELECTRICAL CHARACTERISTICS ( T
c
= 25°C unless otherwise noted )
Characteristic
OFF CHARACTERISTICS
Collector - Emitter Sustaining Voltage (1)
( L = 100 mA, L = 0 )
2N6542
2N6543
V
CEO(«is)
Symbol
Min
Max
Unit
V
300
400
Collector Cutoff Current
( V
CBV
* 650 V, V
« 1 .5 V )
( V
CEV
= 850 V, V
• 1 .5 V )
{ V
CEV
= 650 V, V
= 1 .5 V, T
c
= 100°C )
{ V
CBV
= 850 V, V
BE(0(n
= 1 .5 V, T
e
= 1 00°C )
Emitter Cutoff Current
(V
EB
= 8.0V,I
C
= 0)
2N6542
2N6543
2N6542
2N6543
'cEV
0.5
0.5
3.0
3.0
mA
'EBO
mA
1.0
ON CHARACTERISTICS(I)
DC Current Gain
j ( l
c
= 1.5 A, V
ce
= 2.0V)
( l
c
= 3.0 A, V
CE
= 2.0 V )
Collector-Emitter Saturation Voltage
( i
c
= 3.0 A, I
B
= 0.6 A )
( I
C
- 5 . 0 A , I
B
=1.0 A )
.
hFE
12
7.0
60
35
V
v«
1.0
5.0
V
1.4
Base-Emitter Saturation Voltage
( i
c
= 3.0 A, !
B
= 0.6 A )
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth (2)
( l
c
= 200 mA, V
C6
= 10 V, f =1.0 MHz )
SWITCHING CHARACTERISTICS
i
Delay Time
[Rise Time
Storage Time
Fall Time
(1) Pulse Test: Pulse width = 300 us , Duty Cycle S 2.0%
( 2 ) f
T
= h,. f,
9M
v
w
ft
'<.
*r
MHz
6.0
35
V
ec
= 250 V
I
C
= 3.0A
I
B1
=-I
B2
= 0.6A
t =0.1 ms
Duty Cycle £2.0%
0.05
0.7
4.0
0.8
us
us
us
us
*.
*f
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