C/
Jziisu J^EmL-CondiLckoi iPioaucti, One.
tJ
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
SWITCHMODE SERIES
NPN SILICON POWER TRANSISTORS
The 2N6544 and 2N6545 transistors are designed for high-
voltage .high-speed, power switching inductive circuits where fall
time is critical.they are particularly, suited for 115 and 220 volt line
operated switch-mode applications such as:
* Switching Regulators
* PWM inverters and Motor Controls
* Solenoid and Relay Drivers
* Deflection Circuits
Specification Features-
High Temperature Performance Specified for: Reversed Biased SQA
with inductive loads Switching Times with Inductive Loads Saturation
Voltages, Leakage Currents.
MAXIMUM RATINGS
NPN
2N6544
2N6545
8 AMPERE
NPN SILICON
POWER TRANSISTORS
300-400 VOLTS
125 WATTS
Characteristic
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Base Voltage
Collector current - Continuous
-Peak
Base current -Continuous
Emitter current - Continuous
-Peak
Total Power Dis*ipatJon@T
c
=25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Symbol
v
ceo<*«)
2N6S44
2N6545
400
850
9.0
8.0
16
8.0
16
32
Unit
300
650
V
V
V
A
A
A
W
WV°C
°C
c
0
V
CEV
V
EBO
"c
'CM
>a
>•
IEM
TO-3
PO
TJ.TSTO
125
0.714
- 65 to +200
oT~lJ
JM-
Characteristic
Thermal Resistance Junction to Case
Symbol
Rejc
Max
1.4
Unit
°c/w
PIN 1.BASE
2EMT1TER
COLLECTOR(CASE)
8
FIGURE -1 POWER DERATING
DIM
MILLIMETERS
MIN
MAX
P
c
.
POWER tMSSIPATIONOWATTS)
M
X
V.
x
^\
X,
^
8 -JH
A
B
C
D
E
F
G
)
25
50
75
100
125
150
175
X
200
»o
H
1
J
K
38.75
19.28
7.96
11.18
25.20
0.92
1.38
29.90
16.64
3.88
10.67
39.96
22.23
9.28
12.19
26.67
1.09
1.62
30.40
17.30
4.36
11.18
M
8
T
0
. TEMPERATURE(«C)
NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
notice information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ
Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Qualify Semi-Conductors
2N6544, 2N6545 NPN
ELECTRICAL CHARACTERISTICS ( T
c
= 25
P
C unless otherwise noted )
Characteristic
OFF CHARACTERISTICS
Collector - Emitter Sustaining Voltage (1)
( l
c
= 100 mA, l_ « 0 )
2N6644
2N6545
V
CEO<«n)
Symbol
Min
Max
Unit
V
300
400
Collector Cutoff Current
( V
CBU
= 650 V , V = 1.5V)
2N6544
( V
csw
= 850 V, V
= 1 .5 V )
2N6545
( V
CEW
= 650 V, V „_ = 1 .5 V, T
c
= 100°C ) 2N6544
( V
CEU
= 850 V, V
is(on)
= 1.5 V, T
e
= 100°C ) 2N6545
Emitter Cutoff Current
( V
EB
= 9.0 V , l
c
= 0 )
ON CHARACTERISTICS(I)
DC Current Gain
( l
c
= 2.5 A, V
CE
= 3.0 V )
( l
c
= 5.0 A, V
ce
= 3.0 V )
Collector-Emitter Saturation Voltage
(I
C
= 5.0A, I
B
=1.0A)
(I
C
= 8,OA,I
B
= 2.0A)
Base-Emitter Saturation Voltage
( l
c
= 5.0 A, I
B
= 1 .0 A )
DYNAMIC CHARACTERISTICS
Current - Gain - Bandwidth Product (2)
( l
c
= 300 mA, V
CE
= 10 V, f =1.0 MHz )
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(1) Pulse Test: Pulse width = 300 us , Duty Cycle
^
2.0%
(2)f
T
= K.l'f,*
V
CC
= 250V
l
c
» 5.0 A
I
B1
»-l
B2
= 1 .0 A
t =0.1 ms
Duty Cycle s=
:
2.0%
ICEV
0.5
0.5
2.5
2.5
mA
'EBO
mA
1.0
hFE
12
7.0
60
35
"c,_
V
1.5
5.0
V
1.6
«-.
'T
6.0
MHz
35
«d
tr
0.05
•1.0
4.0
1.0
US
us
us
us
t,
t,
NXP MCU
京公网安备 11010802033920号
EEWORLD
