J.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, O
ne.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
Silicon NPN Power Transistor
2N6752
DESCRIPTION
• Collector-Emitter Sustaining Voltage-
: V
C
EO(sus)= 450(Min.)
• High Switching Speed
• Low Collector Saturation Voltage
• Wide Area of Safe Operation
APPLICATIONS
• Off-line power supplies
• High-voltage inverters
• Switching regulators
PIN
1.BASE
2. EMITTER
3. COLLECT OR (CASE)
TO-3 package
ABSOLUTE MAXIMUM RATINGS(T
a
=25°C)
SYMBOL
VCEV
Vcex(sus)
VcEO(SUS)
PARAMETER
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Collector Power Dissipation@Tc=25"C
Junction Temperature
Storage Temperature
VALUE
850
500
450
8
10
10
5
150
175
UNIT
V
V
V
V
A
A
A
DM
W
'C
1
1
I
c
i
VEBO
Ic
ICM
IB
PC
Tj
Tstg
iron
ft
B
-65-200
°c
D
E
G
H
c
K
THERMAL CHARACTERISTICS
SYMBOL
R
th
L
MAX
1.0
PARAMETER
Thermal Resistance, Junction to Case
UNIT
j-c
•c/w
g
u
V
H
104
MAX
3900
25.30 26*7
7.80
8.30
0.90
1.10
160
1.40
1092
S4S
11.40 13.50
1675 1706
19.40 1962
400
420
3020
30
DO
450
4.30
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25'C
unless otherwise specified
SYMBOL
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Current Gain-Bandwidth Product
Output Capacitance
CONDITIONS
lc= 200mA; I
B
= 0
2N6752
MIN
450
MAX
UNIT
VcEO(SUS)
V
1.0
3.0
1.3
0.1
1.0
2.0
V
V
V
mA
mA
VcE(sat)-!
lc= 5A; I
B
= 1A
I
C
=10A;I
B
=3A
VcE(sat)-2
VBE(sat)
|
c
= 5A; I
B
= 1A
V
CE
= 850V; VBE= -1.5V
V
CE
= 850V; V
BE
= -1.5V; T
C
=100
-
C
VEB= 8V; l
c
= 0
lc= 5A ; V
CE
= 3V
lc=0.2A;V
C
E=10V
I
E
=0; V
CB
= 10V; f= 0.1MHz
ICEV
IEBO
hFE
fy
COB
8
15
50
40
60
250
MHz
pF
Switching times-Resistive Load
td
tr
ts
tf
Delay Time
Rise Time
Storage Time
Fall Time
0.1
0.4
3.0
0.4
li S
lc= 5A; I
B
1= -I
B
2= 1A; V
C
c= 250V;
V
BE
= -6V; t
p
= 20 u s
v-
s
us
us
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