<£E,ml-(2on
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
2N6763, 2N6764
, Line.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
N-Channel Enhancement-Mode
Power MOS Field-Effect Transistors
3lAand38A, 60V-100V
r
0
s(on) = 0.08 O and 0.055 0
Features:
•
SOA is power-dissipation limited
•
Nanosecond switching speeds
•
Linear transfer characteristics
•
High input Impedance
•
Majority carrier device
92CS- 33741
N-CHANNEL ENHANCEMENT MODE
TERMINAL DIAGRAM
The 2N6763 and 2N6764 are n-channel enhancement-mode
silicon-gate power MOS field-effect transistors designed
for applications such as switching regulators, switching
converters, motor drivers, relay driver;:, and drivers for
high-power bipolar switching transistors requiring high
speed and low gate-drive power. These types can be
operated directly from integrated circuits.
TERMINAL DESIGNATION
MAXIMUM RATINGS,
Absolute-Maximum Values:
2N4763
'
DRAIN-SOURCE VOLTAGE. Vw
' DRAIN-GATE VOLTAGE. Voa. (Roi = 20 fcfl)
' GATE-SOURCE VOLTAGE, V
M
DRAIN CURRENT, I
0
, RMS Continuous
60
60
2N67M
100
100
.±20 .
31
20
60
38
24
70
V
V
V
A
A
A
W
W
W/°C
DRAIN CURRENT. I
DM
, Pulsed
................................
POWER DISSIPATION, PT
At T
c
= 25' C
............................................
AtT
c
= 100"C
............................................
Above Tc - 25° C. Derate Linearly
.........................
INDUCTIVE CURRENT, l
t
«, Clamped (L
•••-
100 ^H)
.............
OPERATING AND STORAGE TEMPERATURE, T,, T.,
B
.........
LEAD TEMPERATURE, Tc.
At distance! 0.063 in. (1.6 mm) from seating plane for 10 s max.
'JEDEC registered data.
150 .
.60 -
. 1.2 .
60
70
„ -55 to+150
. 300
A
°C
NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
notice information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ
Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
2N6763, 2N6764
ELECTRICAL CHARACTERISTICS © Tc • 26" C (Unton OtlMfwtt*} Specified)
ftrtHIKH
1yp«
Win.
TVP.
Mn.
-
-
4.0'
100'
1 CO-
LO"
4.0-
2.48'
2.09-
0.08'
&
V
OSS
Drlin - Sowm Brwkdcwm VoltlBi
2NS763
2N«7«4
60
100
2.0'
-
-
Uniti
V
V
V
nA
nA
rnA
THt CoAdttiom
VGS-«
IQ - 1 ,0 mA
v
GS(th)
Giw Thrrtiold Voltljl
G>n
Q<
"
ALL
-
-
-
0.1
0.2
-
-
VDS-V
O S
, l
D
- l m A
V
GS
- 20V
V
QS
- -20V
'OSSF
'GSSR
'OSS
~
8od
V Lnhigl Foivwd
-
§od
v LMkijl R«wn»
Vol«t»
D
'«'" Currant
JILL
ALL
ALL
-
-
-
-
Z
"
Q G
"*
V
DS
- M». Rning, Voj - 0
Vug . M,«. R«in«. V
G$
• 0. T
c
- 125°C
V
GS
-
'0
VI
0
-31A
mA
V
V
v
OS(onl
Slit* Driin-Sourw On-Stiti
2NB763
2NB764
-
-
-
-
-
-
9.0"
V
GS
-10V, I
D
-38A
V
GS
- 10V, l
o
- ZOA
V
GS
• 10V. I
D
• 24A
"oS(on) Swtic Drtin-Sourw On*SUtt«
Rnlltintil ^7}
R
DSIon)
2N«7«3
2NS764
2NB7B3
2NS784
ALL
ALL
ALL
ALL
ALL
ALL
ALL
ALL
o.oa
0.045
-
-
12.5
n
n
n
n
SIUI
0.056'
0.136-
0.094*
27-
Stltie Oriin-Sourot On-Stit*
VQS - 10V, I
D
- 30A. T
C
- 12S°C
V
GS
- 10V, I
D
- S4A. T
c
> 12S°C
V(>S= 15V, I
D
- 2 4 A
V
GS
j
fi
C|
H
^OM
C^
'd lonl
I
,
t,
'd
(til}
Fonwd TrinKonducWKt Q
Input Cipicitinci
Output C«p*cilinci
R«vMf« Tr«nif«r CcpKJMnc*
T«fn-0n D«l«v Tirrw
Tim«
Tuni-OII D«I»Y Tim»
Fill TiifH
ftiM
1000-
500*
150'
2000
1000
350
-
-
-
-
3000-
of
isoo-
500-
36-
pp
• 0, VDS • 25 V, t • 1 .0
MH1
pf
n»
Swf»«. 10
VOD
a
MV. ID - 24A. Z
0
= 4 70
-
_
-
L
_^__
100-
125-
100-
m
n«
(SwRgi. 13wd14l
(MOSFET mitehin) tiirm
trt
nwoidiy
inOWtridtnt ol O0*r«in« nniMriluri.l
n
THERMAL RESISTANCE
n
lhJC
Junction-to-Ctt*
CaH-to-Sinh
junclion-to-AmbJ«nt
ALL
ALL
ALL
-
-
-
-
0.1
-
0.83*
-
30
R^^S
R
th
j
A
•c/w
•c/w
•c/w
Mounting wrlm flit, tmoolh. >ntl gruHd.
Fri« Air Opvntion
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
1$
*SM
V
so
t
rr
Q
nR
Cofttimjoui Sourc* Cwrrtnt
(Body Diod.l
PulMd Scurci Currant
IBodv Diod.l
Diodi Forward Volugl Q
RVVVTH ft*eov*ry Tim*
R*vw fticowld Chirac
0
2N6763
2N»764
2N8763
2N0764
2NS763
2N3764
tLL
-
-
-
-
-
-
-
-
-
-
500
10
31-
38-
60
70
1.8*
1.9-
A
A
V
V
ni
uC
Modifiid MOSFET lymtel
ihowin* thi inugnl
/1 1— -
G»4S
)
D
s
0.9O-
0.95-
-
-
T
C
»25°C.I
S
- 31A.V
Q S
-0
T
c
. 25"C. l
s
-
38A.
V
OS
- 0
-
-
TJ * i$o°c, i
f
• I
SM
,
aif/ai •
too A/
M
I
Tj - 160°C, I
F
- I
SM
. al
F
/ai- 100 A/
w
i
ALL
•JtDECr««iitir*dvilu«
PulMTnt: Puitt Width < 300 WMC, Duty Cyell < 2»
Microcontroller MCU
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