£s
(l£.ii,£.u <^s.mi-dondactoi Lpioducti, Line,
tj
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
2N6765/2N6766
N-Channel Power MOSFETs,
30 A,150 V/200 V
Description
Tries* devices are n-channel. enhancement mode, power
MOSFETs designed especially for high power, high sp«ed
applications, such as switching power supplies, UPS, AC
and DC motor controls, relay and solenoid driver and high
energy pulse circuits.
V
QS
Hated at ±80 V
Silicon Gate lor Fast Switching Sp«ed»
loss, R
D
s<an> Specified at Elevated Temperature)
Rugged
Low Drive Requirement*
Eaie of Paralleling
Maximum Rating*
Symbol
VDSS
VDGR
Characteristic
Drain to Source Voltage
Drain to Gate Voltage
Rss-1
MSI
Qate to Source Voltage
Operating Junction and
Storage Temperatures
Maximum Lead Temperature
tor Soldering Purposes,
1/16* From Case for 10
a
hating
2N8768
Rating
2N6765
150
150
120
2N6765
2N6766
Unit
200
200
±20
V
V
V
Vas
Tj, T
8ts
-55 to
+150
300
-55 to
+150
300
•c
•c
TL
Maximum On-State Characteristics
fusion)
Static Drain-to-Source
On Resistance
Drain Currant
Continuous at TC - 25°C
Continuous at T
c
- loo'C
Pulsed
0.065
0-12
Ji
A
b
IOM
Rsuc
30
19
eo
2
0.85
25
16
SO
2
Maximum Thermal Characteristics
Thermal Resistance,
Junction to Case
Total Power Dissipation
at T
c
-
25'C
at Tc-100-C
Linear Derating Factor
0.83
•c/w
W
PC
150
60
1.2
150
60
1.2
wrc
N.I Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
2N6765/2N6766
Electrical Characteristics
(T
c
-
25"C unless otherwise
noted)
Symbol
Oft Characteristic*
V(BH]DSS
Characteristic
Drain Sourca Breakdown Voltage
2N6766
2N8765
Zero Gate Voltage Drain Currant
Uln
Max
Unit
V
1
Text Conditions
Ves-0 V, I
D
-i.O mA
200
2
150*
loss
1
4
mA
V
M
- Hated VDSS, V
GS
- o v
VQS = Rated V
DS
s,
VGS - o v. T
c
- 125'c
I
C6S
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Raslstance
1
2N6798
2N6765
2N6766
PN6765
Drain-Source On-Voltage
1
2N6766
2N6765
Forward Transccnductance
1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Ohtirgft
9,0
100Q
460
1SQ
±100
2.0
4.0
nA
V
V
GS
-*20 V, V
D3
-0 V
I
0
-1.0 mA. VDS.-VGS
On Charact«rl*lle<
V<3S(th)
R
08tan)
n
O.OB5
0.12
0.1 63
0.218
V
2.7
3.0
27
S(U)
Vos - 10 v,
I
0
=19 A
I
0
-16 A
lo=ie A. T
C
= 12S'C
b-16 A. T
C
-1ZS*C
V
oa
-10 V
V
DS(M)
Ip - 30 A
ID- 25 A
VoS-15 V, I
D
-19 A
VDJ = 25 V, VGS - 0 V
1=1.0 MHz
9l>
Dynamic Characteristic*
c
is
,
C(|S9
3000
1200
500
PF
pF
PF
c«
tdfon)
t,
•d{l)H)
Switching Characteristics Oc-25*C, Figure* 9. 10)
35
100
125
100
ns
ns
ns
na
nC
V
00
= 9S V, I
D
-19 A
VGS -10 V, H
G
EN = 4.7 i
l
Ros-4-7 J2
t(
Q
B
iao
2
V
QS
-10 V, ID -38 A
VDD-IOO V
Electrical Characteri«tlc» (Cont.) (Tc - 25"C unless otherwise noted)
Symbol [
Cn»r«ct«rl»tle
Continuous Source Currant
2N6766
2N6765
Pulsed Source Current
2N6766
2N6765
Diode Forward Voltage
2N6766
2NS76S
Ravarse Recovery Time
Reverse Recovery Charge
0.9
0,85
Mln
Typ
Max
Unit
A
Test Conditions
Source-Drain Dlod* Characterlatlci
Is
30
25
ISM
eo
z
A
so
2
V
1.B
1.7
VSD
VGS " 0 V
l
s
- 30 A
is - as A
na
CC
^
QRR
SOO
2
10
2
Vss-O V, Tj-150'C
!
F - W dl
F
/dt-100 A/MB
VGS-O V, Tj-1BO'C
IF - W dlp/dt - 100 A//JS
Embedded System
京公网安备 11010802033920号
EEWORLD
