JMnic
Product Specification
Silicon PNP Power Transistors
2SA1170
DESCRIPTION
・With
MT-200 package
・High
power dissipation
・Complement
to type 2SC2774
APPLICATIONS
・Audio
and general purpose applications
PINNING (see Fig.2)
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (MT-200) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-200
-200
-6
-17
-5
200
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)EBO
V
CEsat
I
CBO
I
EBO
h
FE
f
T
PARAMETER
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
CONDITIONS
I
C
=-50mA ; I
B
=0
I
E
=-1mA ; I
C
=0
I
C
=-10A ;I
B
=-1A
V
CB
=-200V; I
E
=0
V
EB
=-6V; I
C
=0
I
C
=-8A ; V
CE
=-4V
I
C
=-1A ; V
CE
=-12V
20
20
MIN
-200
-6
2SA1170
TYP.
MAX
UNIT
V
V
-2.5
-100
-100
V
μA
μA
MHz
Switching times
t
r
t
stg
t
f
Rise time
Storage time
Fall time
I
C
=-10A; I
B1
=- I
B2
=-1A
R
L
=4Ω;V
CC
=-40V
0.6
0.9
0.2
μs
μs
μs
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1170
Fig.2 outline dimensions
3
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