MMBTSA1298W
PNP Silicon Epitaxial Planar Transistor
for low frequency power amplifier and power switching
applications
The transistor is subdivided into two groups, O
and Y according to its DC current gain.
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Base Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
-V
CBO
-V
CEO
-V
EBO
-I
C
-I
B
P
tot
T
j
T
S
Value
35
30
5
800
160
200
150
- 55 to + 150
Unit
V
V
V
mA
mA
mW
O
C
C
O
Characteristics at T
a
= 25
O
C
Parameter
DC Current Gain
at -V
CE
= 1 V, -I
C
= 100 mA
at -V
CE
= 1 V, -I
C
= 800 mA
Collector Cutoff Current
at -V
CB
= 30 V
Emitter Cutoff Current
at -V
EB
= 5 V
Collector Emitter Breakdown Voltage
at -I
C
= 10 mA
Emitter Base Breakdown Voltage
at -I
E
= 1 mA
Collector Saturation Voltage
at -I
C
= 500 mA, -I
B
= 20 mA
Base Emitter Voltage
at -V
CE
= 1 V, -I
C
= 10 mA
Transition Frequency
at -V
CE
= 5 V, -I
C
= 10 mA
Collector Output Capacitance
at -V
CB
= 10 V, f = 1 MHz
Current Gain Group
O
Y
Symbol
h
FE
h
FE
h
FE
-I
CBO
-I
EBO
-V
(BR)CEO
-V
(BR)EBO
-V
CE(sat)
-V
BE
f
T
C
ob
Min.
100
160
40
-
-
30
5
-
0.5
-
-
Typ.
-
-
-
-
-
-
-
-
-
120
13
Max.
200
320
-
100
100
-
-
0.4
0.8
-
-
Unit
-
-
-
nA
nA
V
V
V
V
MHz
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 04/06/2007
MMBTSA1298W
I
C -
V
CE
COMMON EMITTER
o
-5 Ta=25 C
DC CURRENT GAIN h
FE
h
FE
- I
C
1000
500
300
100
50
30
10
-1
-3
-10
-30
-100
-300
-1000
COMMON EMITTER
V
CE
=-1V
Ta=100
o
C
25
-25
COLLECTOR CURRENT I
C
(mA)
-800
-6
-4
-600
-3
-2
I
B
=-1mA
-400
-200
0
0
-2
-4
0
-6
-8
-10
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
V
CE(sat)
- I
C
COLLECTOR CURRENT I
C
(mA)
COLLECTOR -EMITTER SATURATION
VOLTAGE V
CE(sat)
(V)
I
C -
V
BE
-1
-0.5
-0.3
Ta=100
o
C
-0.1
-0.05
-0.03
-0.01
-1
-3
-10
-30
-100
-300
-1000
25
-25
COMMON EMITTER
I
C
/I
B
=25
COLLECTOR CURRENT I
C
(mA)
-2
-800
COMMON EMITTER
V
CE
=-1V
-600
Ta=100
o
C 25 -25
-400
-200
0
0
-0.2
-0.4
-0.6
-0.8
-1.0
COLLECTOR CURRENT I
C
(mA)
BASE-EMITTER VOLTAGE V
BE
(V)
Pc - Ta
COLLECTOR POWER DISSIPATION
P
C
(mW)
200
160
120
80
40
0
0
40
80
120 160
200
240
280
AMBIENT TEMPERATURE T
a
(
o
C)
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 04/06/2007
Power technology
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