JMnic
Product Specification
Silicon PNP Power Transistors
2SA1651
DESCRIPTION
・With
TO-220Fa package
・Fast
switching speed
・Low
collector saturation voltage
APPLICATIONS
・For
use in switching power supplies,DC-DC
converters,motor drivers,solenoid drivers,
and other low-voltage power supply devices,
as well as for high current switching
PINNING
PIN
1
2
3
Emitter
Collector;connected to
mounting base
Base
DESCRIPTION
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
T
a
=25℃
P
T
Total power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
25
150
-55~150
℃
℃
PW≤300μs, duty cycle≤10%
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-150
-100
-7
-7
-14
-3.5
1.5
W
UNIT
V
V
V
A
A
A
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEsat-1
V
CEsat -2
V
BE sat -1
V
BE sat -2
I
CBO
I
EBO
h
FE-1
h
FE-2
h
FE-3
f
T
C
OB
PARAMETER
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
DC current gain
Transition frequency
Collector capacitance
CONDITIONS
I
C
=-4A; I
B
=-0.2A
I
C
=-6A; I
B
=-0.3A
I
C
=-4A; I
B
=-0.2A
I
C
=-6A; I
B
=-0.3A
V
CB
=-100V; I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-0.5A ; V
CE
=-2V
I
C
=-1.5A ; V
CE
=-2V
I
C
=-4A ; V
CE
=-2V
I
C
=-1.5A ; V
CE
=-10V
I
E
=-0 ; V
CB
=-10V;f=1MHz
100
100
60
150
150
MIN
TYP.
2SA1651
MAX
-0.3
-0.5
-1.2
-1.5
-10
-10
UNIT
V
V
V
V
μA
μA
400
MHz
pF
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=-4A; I
B1
=-I
B2
=-0.2A
R
L
=12.5Ω; V
CC
=-50V
0.3
1.5
0.4
μs
μs
μs
h
FE-2
Classifications
M
100-200
L
150-300
K
200-400
2
FPGA/CPLD
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