JMnic
Product Specification
Silicon PNP Power Transistors
2SA2031
DESCRIPTION
・With
TO-3PN package
・Complement
to type 2SC5669
・Wide
area of safe operation
・Large
current capacitance
APPLICATIONS
・For
audio frequency output applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
DESCRIPTION
・
Absolute maximum ratings(Ta=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
T
a
=25℃
P
C
Collectorl power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
140
150
-55~150
℃
℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-250
-230
-6
-15
-30
2.5
W
UNIT
V
V
V
A
A
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2SA2031
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=-50mA; R
BE
=∞
-230
V
V
(BR)CBO
Collector-base breakdown voltage
I
C
=-5mA; I
E
=0
-250
V
V
(BREBO
Emitter-base breakdown voltage
I
E
=-5mA; I
C
=0
-6
V
V
CEsat
Collector-emitter saturation voltage
I
C
=-7.5 A;I
B
=-0.75A
-0.3
-2.0
V
V
BE
Base-emitter saturation voltage
I
C
=-7.5A ; V
CE
=-5V
-1.5
V
I
CBO
Collector cut-off current
V
CB
=-250V; I
E
=0
-100
μA
I
EBO
Emitter cut-off current
V
EB
=-4V; I
C
=0
-100
μA
h
FE-1
DC current gain
I
C
=-1A ; V
CE
=-5V
60
160
h
FE-2
DC current gain
I
C
=-7.5A ; V
CE
=-5V
35
C
OB
Output capacitance
I
E
=0 ; V
CB
=-10V,f=1MHz
400
pF
f
T
Transition frequency
I
C
=-1A ; V
CE
=-5V
10
MHz
Switching times
t
on
Turn-on time
I
C
=-7.5A;R
L
=6.67Ω
I
B1
=-I
B2
=-0.75A
V
CC
=-50V
0.45
μs
t
stg
Storage time
1.75
μs
t
f
Fall time
0.25
μs
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA2031
Fig.2 Outline dimensions (unindicated tolerance:±0.1mm)
3
JMnic
Product Specification
Silicon PNP Power Transistors
2SA2031
4
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