JMnic
Product Specification
Silicon PNP Power Transistors
2SB1063
DESCRIPTION
・With
TO-220Fa package
・Complement
to type 2SD1499
・Wide
area of safe operation
・High
f
T
APPLICATIONS
・For
high power amplifier applications
PINNING
PIN
1
2
3
Emitter
Collector
Base
DESCRIPTION
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
Collector -emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
T
a
=25℃
P
C
Collector power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
40
150
-55~150
℃
℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-100
-100
-5
-5
-8
2.0
W
UNIT
V
V
V
A
A
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEsat
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
h
FE-3
f
T
C
OB
PARAMETER
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
DC current gain
Transition frequency
Collector output capacitance
CONDITIONS
I
C
=-3A ;I
B
=-0.3A
I
C
=-3A ; V
CE
=-5V
V
CB
=-100V; I
E
=0
V
EB
=-3V; I
C
=0
I
C
=-20mA ; V
CE
=-5V
I
C
=-1A ; V
CE
=-5V
I
C
=-3A ; V
CE
=-5V
I
C
=-0.5A ; V
CE
=-5V
I
E
=0 ; V
CB
=-10V; f=1MHz
20
40
20
MIN
2SB1063
TYP.
MAX
-2.0
-1.8
-50
-50
UNIT
V
V
μA
μA
200
20
170
MHz
pF
h
FE-2
Classifications
R
40-80
Q
60-120
P
100-200
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1063
Fig.2 Outline dimensions (unindicated tolerance:
±0.15
mm)
3
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