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2SC2335

Description
SWITCHMODE SERIES NPN POWER TRANSISTORS
CategoryDiscrete semiconductor    The transistor   
File Size91KB,3 Pages
ManufacturerNew Jersey Semiconductor
Websitehttp://www.njsemi.com
Download Datasheet Parametric View All

2SC2335 Overview

SWITCHMODE SERIES NPN POWER TRANSISTORS

2SC2335 Parametric

Parameter NameAttribute value
Reach Compliance Codeunknow
Base Number Matches1
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
SWITCHMODE SERIES NPN POWER TRANSISTORS
... designed for use in high-voltage, high-speed,pow«r switching
in inductive circuit, they are particularly suited for 11 5 and 220 V
swftchmode applications such as switching regulator's.inverters.DC
-DC and conveter
FEATURES:
*Coll«ctor-Emittor Sustaining Voltage-
c
«>Mu»,
Collector-Emitter Saturation Voltage -
V
CE(«D = 1 0 V (Max.) Q l
c
= 3.0 A, I
B
= 0.6 A
Switching Time - t, = 1 .0 us (Max.) Q l
c
=3.0 A
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
NPN
2SC2335
7.0 AMPERE
SILICON POWER
TRANASISTORS
400 VOLTS
40 WATTS
MAXIMUM RATINGS
Characteristic
Collector-Emitter VoKage
Collector-Base Voltage
Emitter-Base VoKage
Collector Current - Continuous
-Peak
Base current
Total Power Dissipation <$T
C
= 25°C
Derate above 2S°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance Junction to Case
Symbol
VCEO
v
c»o
2SC2336
400
500
7.0
7.0
15
3.5
40
0.32
-55
to
+150
Unit
V
V
V
VEBO
>C
TO-220
A
A
ICM
'B
PD
T
J '
T
STO
W
W/°C
°C
Symbol
Rejc
Max
3.125
Unit
°C/W
PM 1.BASE
2.COLLECTOR
3.EMTTER
4.COU£CTOR(CA$E)
DIM
FIGURE -1 POWER DERATING
MILLIMETERS
MIN
14.68
9.78
5.01
13.08
3.57
2.42
1.12
0.72
4.22
1.14
MAX
j25
•20
i 15
MO
25
50
75
100
125
T
c
, TEMPERATURE(»C)
150
A
B
C
D
E
F
G
H
I
J
K
L
M
O
2.20
0.33
2.48
3.70
15,31
10.42
6.52
14.62
4.07
3.66
1.36
0.96
4.93
1.38
2.97
0.55
2.96
3.90
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