J.EIIE.U
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
,
line.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2N3439; 2N3440; 2N4063; 2N4064; 40385;
40346, V1, V2; 40390; 40412, V1, V2
High-Voltage Silicon N-P-N Transistors
MAXIMUM RATINGS,
Absolute M,,imum Vtluts:
'COLLECTOR TO BASE VOLTAGE
COLLECTOR TO EMITTER VOLTAGE:
With external base to emitter resistance
(R
BE
| - 1,0000
• 10,000 fl
With base open
'EMITTER-TO BASE VOLTAGE
"CONTINUOUS COLLECTOR CURRENT .
'CONTINUOUS BASE CURRENT
TRANSISTOR DISSIPATION:
At case temperature up to 25°C
At free-air temperatures up to 25°C
At free-air temperatures up to 50°C . . . .
At Iree-air temperatures above 25°C or 50°C
V
CBO
2NJ439
2N4063
40385
2N3440
2N4064
40390
40346
40348V1
40348 V2
40412
40412V1
40412V2
450
300
V
CER
(su
S
)
V
CER
(sus)
V
CEO'
SU5
'
175
250
350
'EBO
7
1
0.5
10
1 (403851
K2N3439I
—-
250
7
0.5
10I2N3440)
1OI2N4064)
3.5(40390)
0.5
10(40346)
10I40346V2)
4I40346V1)
1
0.5
10(404121
W
10I40412V2) W
4I40412V1) W
1(40412)
W
JEOEC TO 39 with FUngi
2N4M3.IN40a4,4034eV2,
40412V2
1(40346)
1 (2N3440)
Derate linearly to 20O°C
__
_- «C
•TEMPERATURE RANGE:
Storage & Operating (Junction)
—
-65 to 200
•LEAD TEMPERATURE (During soldering):
At distances > 1/32 in (0.79 mm)
from seating plane for 10 s man
....
255
. for 2N4063 ind 2N»06« only
°C
*2N-S«rlii lypti in accordance with JEOEC reoiiunioo d«l»
NOTE: P
T
vilin oMOW .1 T
C
- 26°C indtoadlempnauiie ol 255°C
ui
>
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to.be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
2N3439; 2N3440; 2N4063; 2N4064; 40385;
40346, V1,V2; 40390; 40412, V1, V2
ELECTRICAL CHARACTERISTICS,
Case
Temperature (T
c
)
=
25°C, Unless Otherwise Specified
LIMITS
VOLTAGE
CHARACTERISTICS
SYMBOL
V
dc
V
BE
CURRENT
mA dc
2N3439
2N4063
40385
2N3440
2N4064
40390
40346
40346V1
40346V2
40412
40412V1
4041 2V2
UNITS
VCE
Collector-Cutoff Current:
With base open
With base reverse-
biased:
AtT
c
= 150°C
With R = 10,000 ohms
Emitter-Cutoff Current
DC Forward-Current
Transfer Ratio
Collector-to-Emitter
Sustaining Voltage:
With base open
Collector-to-Emitter
Sustaining Voltage:
With external base-to-
emitter resistance
RBE
=
1,000 ohms
RBE
=
10,000 ohms
Base-to- Emitter Voltage
Base-to- Emitter
Saturation Voltage
I
B
= 4mA
Collector-to-Emitter
Saturation Voltage
I
B
= 1 mA
Ig = 4 mA
Small-Signal Forward-
Current Transfer Ratio:
f= 5 MHz
Output Capacitance:
V
CB
= 10V, f = 1 MHz
Second-Breakdown Current
Thermal Resistance:
Junction-to-case
Junction-to-free air
"CER
'c
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
5
-
20
-
50
-
10
_
500
—
-
-
-
-
20
20
25
40
160
40
160
-
40
350*
-
250"
-
-
-
-
-
V
-
-
-
-
1
_
5
_
-
2
1
100
mA
mA
MA
-
500
-
„
-
-
^A
5
'CEO
'CEV
100
200
300
200
300
450
150
200
100
-
- 1.5
- 1,5
- 1.5
- 1.5
- 1.5
-3
-4
-6
'EBO
"FE
10
10
10
20
-
2
10
20
30
50
30
V
CEO
(sus)
V
CER(sus)
v
CER(sus)
50
50
10
10
50
_
-
-
1.3
-
-
-
-
-
1.3
175
a
-
-
-
250"
1
-
-
-
-
-
-
V
V
VBE
V
BE
(sat)
-
-
V
CE
(sat)
10
50
h
fe
-
0.5
3
-
-
10
-
17.5
-
0.5
3
-
-
-
-
10
-
17.5
-
0.5
-
0.5
V
10
10
2
-
-
-
10
—
2
-
50
-
10
-
c
ob
pF
mA
!
S/b
200
-
-
R
0JC
15 max.
(40346)
(40346V2)
45 max.
(40346V 1)
15 max.
(40412)
(4041 2 V2)
45 max.
(4041 2V 1
°C/W
R0JFA
-
-
-
-
*2N-Series typ« In accordance with JEDEC registration data
•CAUTION: The sustaining voltages, V££Q(SUS) and V
c
g
R
(sus), MUST NOT be measured on a curve tracer
Embedded System
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