K4M281633F-BF1L datasheet, PDF

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K4M281633F-BF1L: DescriptionSynchronous DRAM, 8MX16, 7ns, CMOS, PBGA54; Categorystorage storage; File Size103KB，12 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/; Environmental Compliance

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K4M281633F-BF1L Overview

Synchronous DRAM, 8MX16, 7ns, CMOS, PBGA54

K4M281633F-BF1L Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Objectid	104351659
package instruction	FBGA, BGA54,9X9,32
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum access time	7 ns
Maximum clock frequency (fCLK)	105 MHz
I/O type	COMMON
interleaved burst length	1,2,4,8
JESD-30 code	S-PBGA-B54
memory density	134217728 bit
Memory IC Type	SYNCHRONOUS DRAM
memory width	16
Humidity sensitivity level	3
Number of terminals	54
word count	8388608 words
character code	8000000
Maximum operating temperature	70 °C
Minimum operating temperature	-25 °C
organize	8MX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	FBGA
Encapsulate equivalent code	BGA54,9X9,32
Package shape	SQUARE
Package form	GRID ARRAY, FINE PITCH
power supply	3/3.3 V
Certification status	Not Qualified
refresh cycle	4096
Continuous burst length	1,2,4,8,FP
Maximum standby current	0.0005 A
Maximum slew rate	0.155 mA
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM

K4M281633F-BF1L Preview

K4M281633F - R(B)E/N/G/C/L/F

2M x 16Bit x 4 Banks Mobile SDRAM in 54CSP

FEATURES

• 3.0V & 3.3V power supply.

• LVCMOS compatible with multiplexed address.

• Four banks operation.

• MRS cycle with address key programs.

-. CAS latency (1, 2 & 3).

-. Burst length (1, 2, 4, 8 & Full page).

-. Burst type (Sequential & Interleave).

• EMRS cycle with address key programs.

• All inputs are sampled at the positive going edge of the system

clock.

• Burst read single-bit write operation.

• Special Function Support.

-. PASR (Partial Array Self Refresh).

-. Internal TCSR (Temperature Compensated Self Refresh)

-. DS (Driver Strength)

• DQM for masking.

• Auto refresh.

•

64ms refresh period (4K cycle).

Commercial Temperature Operation (-25° C ~ 70°C).

Extended Temperature Operation (-25° C ~ 85° C).

54Balls CSP with 0.8mm ball pitch( -RXXX -Pb, -BXXX -Pb Free).

Mobile-SDRAM

GENERAL DESCRIPTION

The K4M281633F is 134,217,728 bits synchronous high data

rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits,

fabricated with SAMSUNG’s high performance CMOS technol-

ogy. Synchronous design allows precise cycle control with the

use of system clock and I/O transactions are possible on every

clock cycle. Range of operating frequencies, programmable

burst lengths and programmable latencies allow the same

device to be useful for a variety of high bandwidth and high per-

formance memory system applications.

ORDERING INFORMATION

Part No.

K4M281633F-R(B)E/N/G/C/L/F75

K4M281633F-R(B)E/N/G/C/L/F1H

K4M281633F-R(B)E/N/G/C/L/F1L

Max Freq.

133MHz(CL=3)

105MHz(CL=2)

105MHz(CL=3)

LVCMOS

54 CSP Pb

(Pb Free)

Interface

Package

- R(B)E/N/G : Normal / Low / Low Power, Extended Temperature(-25°C ~ 85°C)

- R(B)C/L/F : Normal / Low / Low Power, Commercial Temperature(-25°C ~ 70°C)

NOTES :

1. In case of 40MHz Frequency, CL1 can be supported.

2. Samsung are not designed or manufactured for use in a device or system that is used under circumstance in which human life is potentially at stake.

Please contact to the memory marketing team in samsung electronics when considering the use of a product contained herein f or any specific pur

pose, such as medical, aerospace, nuclear, military, vehicular or undersea repeater use.

December 2003

K4M281633F - R(B)E/N/G/C/L/F

FUNCTIONAL BLOCK DIAGRAM

Mobile-SDRAM

I/O Control

LWE

Data Input Register

Bank Select

LDQM

2M x 16

Refres h Counter

O utput Buffer

Row Decoder

Sens e A MP

Row Buffer

DQi

Address Register

LRAS

CLK

CKE

CLK

ADD

Column Decoder

Col. Buffer

LRAS

LCBR

Latency & Burst Length

LCKE

LCBR

LWE

LCAS

Programming Register

LWCBR

LDQM

Timing Register

RAS

CAS

L(U)DQM

December 2003

K4M281633F - R(B)E/N/G/C/L/F

Package Dimension and Pin Configuration

< Bottom View

E/2

Pin Name

CLK

D/2

VSS

DQ14

DQ12

DQ10

DQ8

UDQM

VSS

DQ15

DQ13

DQ11

DQ9

CLK

A11

Mobile-SDRAM

< Top View

54Ball(6x9) CSP

VSSQ

VDDQ

VSSQ

VDDQ

VSS

CKE

VDDQ

VSSQ

VDDQ

VSSQ

VDD

CAS

BA0

DQ0

DQ2

DQ4

DQ6

LDQM

RAS

BA1

VDD

DQ1

DQ3

DQ5

DQ7

A10

VDD

Pin Function

System Clock

Chip Select

Clock Enable

Address

Bank Select Address

Row Address Strobe

Column Address Strobe

Write Enable

Data Input/Output Mask

Data Input/Output

Power Supply/Ground

Data Output Power/Ground

[Unit:mm]

*2: Top View

CKE

~ A

~ BA

RAS

CAS

Max. 0.20

Encapsulant

*1: Bottom View

< Top View

#A1 Ball Origin Indicator

L(U)DQM

D Q

DDQ

SSQ

SEC

Week

XXXX

Symbol

Min

0.90

0.30

0.40

Typ

0.95

0.35

8.00

6.40

8.00

6.40

0.80

0.45

Max

1.00

0.40

0.50

0.10

K4M281633F

December 2003

K4M281633F - R(B)E/N/G/C/L/F

ABSOLUTE MAXIMUM RATINGS

Parameter

Voltage on any pin relative to V

Voltage on V

supply relative to V

Storage temperature

Power dissipation

Short circuit current

Symbol

, V

OUT

, V

DDQ

STG

Value

-1.0 ~ 4.6

-55 ~ +150

1.0

Mobile-SDRAM

Unit

NOTES:

Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.

Functional operation should be restricted to recommended operating condition.

Exposure to higher than recommended voltage for extended periods of time could affect device reliability.

DC OPERATING CONDITIONS

Recommended operating conditions (Voltage referenced to V

= 0V, T

= -25°C ~ 85°C for Extended, -25°C ~ 70° C for Commercial)

Parameter

Supply voltage

DDQ

Input logic high voltage

Input logic low voltage

Output logic high voltage

Output logic low voltage

Input leakage current

2.7

2.2

-0.3

2.4

-10

3.0

3.6

DDQ

+ 0.3

0.5

0.4

= -2mA

= 2mA

Symbol

Min

2.7

Typ

3.0

Max

3.6

Unit

Note

NOTES :

1. VIH (max) = 5.3V AC.The overshoot voltage duration is

≤

3ns.

2. VIL (min) = -2.0V AC. The undershoot voltage duration is

≤

3ns.

3. Any input 0V

≤

VIN

≤

VDDQ.

Input leakage currents include Hi-Z output leakage for all bi-directional buffers with tri-state outputs.

4. Dout is disabled, 0V

≤

VOUT

≤

VDDQ.

CAPACITANCE

= 3.0V & 3.3V, T

= 23°C, f = 1MHz, V

REF

=0.9V

50 mV)

Clock

RAS, CAS, WE, CS, CKE, DQM

Address

D Q

~ DQ

Symbol

CLK

ADD

OUT

Min

2.0

3.0

Max

4.0

6.0

Unit

Note

December 2003

K4M281633F - R(B)E/N/G/C/L/F

DC CHARACTERISTICS

Mobile-SDRAM

Recommended operating conditions (Voltage referenced to V

= 0V, T

= -25 to 85

°C

for Extended, -25 to 70°C for Commercial)

Version

Parameter

Symbol

Test Condition

-75

Operating Current

(One Bank Active)

Burst length = 1

≥

(min)

= 0 mA

CKE

≤

(max), t

= 10ns

CKE & CLK

≤

(max), t

∞

CKE

≥

I H

(min), CS

≥

(min), t

= 10ns

Input signals are changed one time during 20ns

CKE

≥

I H

(min), CLK

≤

(max), t

∞

Input signals are stable

CKE

≤

(max), t

= 10ns

CKE & CLK

≤

(max), t

∞

CKE

≥

I H

(min), CS

≥

(min), t

= 10ns

Input signals are changed one time during 20ns

CKE

≥

I H

(min), CLK

≤

(max), t

∞

Input signals are stable

= 0 mA

Page burst

4Banks Activated

CCD

= 2CLKs

≥

(min)

-E/C

-N/L

Self Refresh Current

CKE

≤

0.2V

-G/F

1/2 of Full Array

1/4 of Full Array

NOTES:

1. Measured with outputs open.

2. Refresh period is 64ms.

3. Internal TCSR can be supported.

In commercial Temp : Max 40°C/Max 70°C, In extended Temp : Max 40°C/Max 85°C

4. K4M281633F-R(B)E/C**

5. K4M281633F-R(B)N/L**

6. K4M281633F-R(B)G/F**

7. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ).

300

280

400

360

Internal TCSR

Full Array

Max 40

350

-1H

-1L

Unit

Note

CC1

Precharge Standby Current in

power-down mode

CC2

0.5

Precharge Standby Current

in non power-down mode

CC2

Active Standby Current

in power-down mode

CC3

Active Standby Current

in non power-down mode

(One Bank Active)

CC3

Operating Current

(Burst Mode)

130

110

Refresh Current

170

700

155

500

Max 85/70

500

°C

December 2003

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