, U
na.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX:
(973) 376-8960
BD777*
BD779*
BD776*
BD778*
BD780*
PLASTIC DARUNGTON COMPLEMENTARY
SILICON POWER TRANSISTORS
. . . designed for genera! purpose amplifier and high-speed
switching applications.
•
High DC Current Gain
hfE -
1400
(Typ) @ IG - 2.0 Adc
VCEO («"«)
- 45 Vde (Mln) — BD77B
60 Vde (Mini — BD777.778
- BO Vde (Mln) — BD779,780
• Collector-Emitter Sustaining Voltage -
@
10 mAdc
DARLINGTON
4-AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
46. 60. 80 VOLTS
IS WATTS
•
Reverse Voltage Protection Diode
• Monolithic Construction with Built-in Base-Emitter
output Resistor
MAXIMUM RATINGS
nettle
B0776
BO77B
Collector-Emitter Volugt
Collector-Baal Voltage
Emitter-
Voltage
Colltctor Cumni —
Continuous Pmk
Bnt Current
Tout Device Oivipetian
TC — 25"C - Derm ibov*
2S"C
Operating and Stor«g>
junction Tempereture
Ren«.
THERMAL CHARACTERISTICS
B0779
VCEO
VCB
VEB
45
46
60
60
S.O
80
80
Vdc
Vde
Vde
Ade
3Bh- "
LC^
F
o
E
.
I
^ -
1
1
C
(-
"c
••o
TJ.T,,
S
TJ.T,,,
4.0
6.0
100
15
0.12
- 65W + 150
t~
mAdc
W/»C
H
J~
_,
K
1
•c
~J
U-R
U-S I*|0.25(O.OIO)®| A®l B® |
U-v
•-a
_1
.-
-J
*-D>H.|+|0.2S(0.010)®| A®| B® |
R0JC
R0JA
8.34
813
"CNt
'CM
NOUS:
ThernulRnitunce. Junction to CMC
Thermal Reiiitmce. junction to Ambient
FIGURE 1 - POWER DERATING
i MBanNmiwottXEnwcwEnM*
VI4JM.WB.
I
COHIWUHBlMMICttWCH
i vr« Tmu-eioeennt.*wsT*eMm
tn«.
J L Jl
ii
:E 3
,
1
l.«
. j M ..MI. . m
j:,»«». a
1>
PHI. anroi
i coufcrai
1 M>
i
S
: : H
IA
fitt
Ml I t.
40
s
N
ioe
0.4
^-•41
. JO. .S . B .
i s
1
, j: '
Ali
i .ii
jjijfe.
- .
:
li
:
:
• -4* -
,8,R if
i
_ -!
1
*
_ _U I
^j
1
1
0
«
-
j,|«
9.11
1
W
-
TO-22SAATYPE
IM
140
T. TEMPERATURE Itl
Annular Stmteooduciort Patented by Motorale Inc.
Trademerk of Motgrole Inc.
BD777, BD779 NPN
BD776, BD778, BD780 PNP
ELECTRICAL CHARACTERISTICS (T
c
- 25°C unto* Mhi
CHARACTERISTIC
OFF CHARACTERISTICS
Collacior-Emittir
CoHtctor-Emitttr Suiuinino, Volugi (1)
|I
O
- 10 mAde. I
B
- 0)
BD776
BD777, B0778
B0779. BO780
CollKlor Cutoff Currant
1 VCE = 20 Vde, I
B
- 01
(VcE ~ 30 Vdc, IB - 01
(VCE " 40 Vdc, Ig - 0»
Collector Cutoff Currant
SVMBOL
id)
MIN.
MAX.
UNIT
V
C60
(«•!
Vdc
45
60
80
'CEO
MAdc
100
100
100
B0776
BD777, BD778
8D779, BO 780
ICBO
MAde
1.0
100
<VCB - ««•* VCEO <*»»>• IE - «
IV
CB
- Rand, VCEO <»•'. "E • 0, Ic " 100 °C)
Emimr Cutoff Currant
(V
BE
-S.OVdt, I
C
"0)
ON CHARACTERISTICS
DC Currant G*n
ll
c
- 2.0 Ade. V
CE
- 3.0
vdcl
Colltctor-Emimr Saturation Voltagf
(l
c
- 1.5 Adc, l
e
- BmAdc)
B«* Emilltr Siturition Voltigi
DC - 1.5 Adc. I
B
-
6 mAdct
IEBO
1.0
MAdc
HFE
V
CE
7»
(Sail
1.5
Vdc
V
BE
(Sat)
2.5
Vdc
Bot-Emitttf On Volup
(l
c
- 1 5 Adc. V
CE
- 3 Vdc)
Output Diodt Volugt Drop
(I
E
C "2.0 Ade)
DYNAMIC CHARACTERISTICS
Currant Gain Bandwidth Product
ll
c
- 1.0 Adc. VCE ~ 2.0 Vdc)
V
BE
(On)
2.3
Vdc
VEC
2.0
Vde
«T
20
MHz
SVMBOL
Turn-On Tim* ll
c
= 260 mA/VCE - 2 V)
BO775-777-779
B0776- 778-780
Turn Oft Tim* (l
c
- 2SO mA. VCE - 2 V)
BO77f>777-77»
8O776-778-780
<on
Tvr.
250
250
ISO
UNIT
nt
toll
IM
600
400