BD779 datasheet, PDF - EEWORLD Datasheet

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BD779: DescriptionPLASTIC DARUNGTON COMPLEMENTARY SILICON POWER TRANSISTORS; CategoryDiscrete semiconductor The transistor; File Size103KB，3 Pages; ManufacturerNew Jersey Semiconductor; Websitehttp://www.njsemi.com

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BD779 Overview

PLASTIC DARUNGTON COMPLEMENTARY SILICON POWER TRANSISTORS

BD779 Parametric

Parameter Name	Attribute value
Maker	New Jersey Semiconductor
Reach Compliance Code	unknow

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, U

na.

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

TELEPHONE: (973) 376-2922

(212) 227-6005

FAX:

(973) 376-8960

BD777*

BD779*

BD776*

BD778*

BD780*

PLASTIC DARUNGTON COMPLEMENTARY

SILICON POWER TRANSISTORS

. . . designed for genera! purpose amplifier and high-speed

switching applications.

•

High DC Current Gain

hfE -

1400

(Typ) @ IG - 2.0 Adc

VCEO («"«)

- 45 Vde (Mln) — BD77B

60 Vde (Mini — BD777.778

- BO Vde (Mln) — BD779,780

• Collector-Emitter Sustaining Voltage -

@

10 mAdc

DARLINGTON

4-AMPERE

COMPLEMENTARY SILICON

POWER TRANSISTORS

46. 60. 80 VOLTS

IS WATTS

•

Reverse Voltage Protection Diode

• Monolithic Construction with Built-in Base-Emitter

output Resistor

MAXIMUM RATINGS

nettle

B0776

BO77B

Collector-Emitter Volugt

Collector-Baal Voltage

Emitter-

Voltage

Colltctor Cumni —

Continuous Pmk

Bnt Current

Tout Device Oivipetian

TC — 25"C - Derm ibov*

2S"C

Operating and Stor«g>

junction Tempereture

Ren«.

THERMAL CHARACTERISTICS

B0779

VCEO

VCB

VEB

45

46

60

S.O

80

Vdc

Vde

Ade

3Bh- "

LC^

F

o

E

.

I

^ -

1

C

(-

"c

••o

TJ.T,,

S

TJ.T,,,

4.0

6.0

100

15

0.12

- 65W + 150

t~

mAdc

W/»C

H

J~

_,

K

1

•c

~J

U-R

U-S I*|0.25(O.OIO)®| A®l B® |

U-v

•-a

_1

.-

-J

*-D>H.|+|0.2S(0.010)®| A®| B® |

R0JC

R0JA

8.34

813

"CNt

'CM

NOUS:

ThernulRnitunce. Junction to CMC

Thermal Reiiitmce. junction to Ambient

FIGURE 1 - POWER DERATING

i MBanNmiwottXEnwcwEnM*

VI4JM.WB.

I

COHIWUHBlMMICttWCH

i vr« Tmu-eioeennt.*wsT*eMm

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:E 3

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1

l.«

. j M ..MI. . m

j:,»«». a

1>

PHI. anroi

i coufcrai

1 M>

i

S

: : H

IA

fitt

Ml I t.

40

s

N

ioe

0.4

^-•41

. JO. .S . B .

i s

1

, j: '

Ali

i .ii

jjijfe.

- .

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li

:

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i

_ -!

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*

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^j

1

0

«

-

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9.11

1

W

-

TO-22SAATYPE

IM

140

T. TEMPERATURE Itl

Annular Stmteooduciort Patented by Motorale Inc.

Trademerk of Motgrole Inc.

BD779 Related Products

	BD779	BD776	BD777	BD778	BD780
Description	PLASTIC DARUNGTON COMPLEMENTARY SILICON POWER TRANSISTORS	PLASTIC DARUNGTON COMPLEMENTARY SILICON POWER TRANSISTORS	PLASTIC DARUNGTON COMPLEMENTARY SILICON POWER TRANSISTORS	PLASTIC DARUNGTON COMPLEMENTARY SILICON POWER TRANSISTORS	PLASTIC DARUNGTON COMPLEMENTARY SILICON POWER TRANSISTORS
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow
Maker	New Jersey Semiconductor	-	New Jersey Semiconductor	New Jersey Semiconductor	New Jersey Semiconductor

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