<^7V
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
,
U
na.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
Silicon NPN Power Transistor
BDY91
DESCRIPTION
• High DC Current Gain-
: h
FE
=30-120@l
c
=5A
• Excellent Safe Operating Area
• High Current Capability
APPLICATIONS
• Designed for use in switching-control amplifiers,
power
PIN LEASE
2. ailTTER
3. COLLECTOR (CASE)
TO-3 package
gates,switch ing regulators, converters, and inverters.
ABSOLUTE MAXIMUM RATINGS(T
a
=25'C)
SYMBOL
VCBO
VCEV
VCEO
VEBO
Ic
I CM
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage V
BE
= -1.5V
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Collector Power Dissipation
@T
c
s£25'C
Junction Temperature
Storage Temperature Range
VALUE
100
100
80
6
10
15
2
60
175
UNIT
V
V
V
V
A
A
A
W
°C
IB
PC
Tj
on*
A
IIHI1
3900
25.30 2567
790
09C
140
MM
MAX
e
D
E
__fi_
H
K
L
C
Tstg
-65-175
•c
8.30
1.10
1.60
1092
5.4$
11.40
THERMAL CHARACTERISTICS
SYMBOL
P-th j-c
PARAMETER
Thermal Resistance.Junction to Case
MAX
2.5
UNIT
g
u
N
1675
19.40
4.00
1350
17.05
19S2
4.20
°c/w
v
30.00
4,30
3020
450
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information Furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
BDY91
MAX
UNIT
VcEO(SUS)
Collector-Emitter Sustaining Voltage
l
c
= 100mA ;I
B
=0
80
V
VcE(sat)-1
Collector-Emitter Saturation Voltage
lc= 5A; I
B
= 0.5A
0.5
V
VcE(sat)-2
Collector-Emitter Saturation Voltage
lc= 10A; I
B
= 1A
1.5
V
VBE(sat)-1
Base-Emitter Saturation Voltage
lc= 5A; I
B
= 0.5A
1.2
V
VBE(sat)-2
Base-Emitter Saturation Voltage
lc= 10A; I
B
= 1A
1.5
V
IGBO
Collector Cutoff Current
V
CB
=100V; I
E
=0
V
C
E=100V;V
B
E=-1.5V
V
CE
=1 OOV;V
BE
=-1 .5V;T
C
=1 50 °C
V
EB
=6V; l
c
=0
1.0
1.0
3.0
1.0
mA
ICEV
Collector Cutoff Current
mA
IEBO
Emitter Cutoff current
mA
hpE-1
DC Current Gain
|
C
=1A;V
C
E=2V
35
hpE-2
DC Current Gain
lc=5A;V
C E
=5V
30
120
hpE-3
DC Current Gain
I
C
=10A; V
CE
=5V
20
fr
Current-Gain — Bandwidth Product
lc=0.5A;V
C
E=5V;ftest=5MHz
70
MHz
Switching Times
ton
Turn-On Time
I
C
=5A;I
B
1=-IB2=0.5A,
V
CG
=30V
0.35
us
tstg
Storage Time
1.3
11 S
tf
Fall Time
0.2
us
ADI Reference Circuit
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