<£e.mi-(lonaaakoi \Piodudi,
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
NPN switching transistor
FEATURES
PINNING
BFX85
• High current (max. 1 A)
• Low voltage (max. 60 V).
APPLICATIONS
PIN
1
2
3
DESCRIPTION
emitter
base
collector, connected to case
• General purpose switching and amplification
• Industrial applications.
DESCRIPTION
NPN transistor in a TO-39 metal package.
Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
transition frequency
turn-off time
open emitter
open base
T
amb
<;25*C
Tease 51 00 °C
CONDITIONS
MIN.
„
-
-
-
-
70
50
TYP.
-
-
-
-
-
142
-
360
MAX.
100
60
1
800
2.86
-
-
-
UNIT
VCBO
VCEO
Ic
Ptot
V
V
A
mW
W
MHz
hFE
fr
toff
lc=150mA;V
CE
= 10V
l
c
= 50 mA; V
CE
= 10 V; f = 100 MHz
Icon = 150 mA; !
B
on = 15 mA; la* = -15 mA
-
ns
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
open emitter
MIN.
-
-
-
-
-
-
_
-
-
-65
-
-65
MAX.
100
60
6
1
1
100
800
5
2.86
+150
175
+150
V
V
V
A
A
UNIT
VCBO
VCEO
VEBO
>c
ICM
IBM
Ptot
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
open base
open collector
mA
mW
W
W
C
"C
Tamb
$
25
C
C
T
case
5 25
3
C
25°CsT
c a s e
^100
0
C
Tstg
Tj
Tamb
storage temperature
junction temperature
operating ambient temperature
•c
THERMAL CHARACTERISTICS
SYMBOL
P-thha
Rthj-c
PARAMETER
CONDITIONS
VALUE
UNIT
thermal resistance from junction to ambient in free air
thermal resistance from junction to case
200
35
KM/
K/W
Quality Semi-Conductors
NPN switching transistor
CHARACTERISTICS
TJ = 25 ' C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
collector cut-off current
CONDITIONS
BFX85
MIN.
-
-
-
-
-
-
-
50
70
30
15
-
-
-
-
-
TYP.
2
0.1
10
0.5
2
0.1
10
90
142
90
50
150
150
0.35
0.66
0.69
0.92
1.15
1.4
7
185
55
15
40
360
300
60
MAX.
UNIT
50
2.5
500
30
50
2.5
500
-
_
-
-
200
350
1
1.6
1.2
1.3
1.5
2
12
-
-
-
-
-
-
-
nA
HA
nA
HA
nA
MA
nA
I
E
= 0; V
CB
= 80 V
|
E
= 0; V
CB
= 80V;Tj = 100 >C
I
E
= 0; V
CB
= 100V
|
E
= 0; V
CB
= 100V;Tj = 100°C
l
c
= 0; V
EB
= 5 V
lc = 0;V
E
B = 5 V ; T j = 1 0 0 ° C
l
c
= 0; V
EB
= 6 V
l
c
= 10mA; V
CE
= 10V
l
c
=150mA;V
CE
=10V
l
c
= 500mA;V
C
E=10V
!EBO
emitter cut-off current
hFE
DC current gain
VcEsat
lc=1 A;V
CE
=10V
collector-emitter saturation voltage
IG = 1 0 mA; IB = 1 mA
l
c
= 150 mA; I
B
= 15 mA
VeEsat
base-emitter saturation voltage
Co
collector capacitance
transition frequency
fr
-
l
c
= 500 mA; I
B
= 50 mA
-
l
c
= 1 A; I
B
= 100mA
-
|
E
= i
e
= 0; V
C
B = 1 0 V ; f = 1 MHz
-
l
c
= 50 mA; VCE = 10 V; f = 100 MHz 50
Icon = 150 mA; leon = 15 mA;
l
Bo
ff = -15mA
lc = 500 mA; I
B
= 50 mA
l
c
= 1 A; IB = 100mA
\=
10 mA; I
B
= 1 mA
l
c
= 150mA; IB = 15mA
mV
mV
V
V
V
V
V
V
pF
MHz
ns
ns
ns
ns
ns
ns
Switching Times (between 10% and 90% levels) see Fig. 2
ton
td
t
r
toff
ts
tf
turn-on time
delay time
rise time
turn-off time
storage time
fall time
-
-
-
-
-
-
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