^emi-Conaucko'i iPioducti, Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
BFX87
BFX88
SILICON PLANAR EPITAXIAL TRANSISTORS
PNP transistors in TO-39 metal envelopes for general industrial applications.
QUICK REFERENCE DATA
BFX87
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current (peak value)
Total power dissipation up to T
am
b = 25 °C
DC current gain
-l
c
= 10mA; -VCE- 10V
Transition frequency at f = 100 MHz
~l
c
- 50 mA; -VCE = 10 V
MECHANICAL DATA
Fig.1 TO-39.
BFX88
40
40
-VCBO
-VCEO
-'CM
p
tot
max.
max.
max.
max.
min.
tVP.
min.
50
50
600
600
125
100
V
V
mA
mW
600
600
125
100
H
FE
f
T
MHz
Dimensions in mm
Collector connected to case
t
8.S
max
1
"L
6.6
max
Maximum lead diameter is guaranteed only for 12.7 mm.
NJ Semi-Conductors reserves the right to change test condidons. parameters limits and package dimensions without
notice information famished by NJ Semi-Conductors is believed to be both accurate and reliable at the time ofgoing to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ
Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
BFX87
BFX88
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC134)
BFX87
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current (DC)
Collector current (peak value)
Emitter current
Total power dissipation up to T
am
t, = 25 °C
Storage temperature range
Junction temperature
THERMAL RESISTANCE
From junction to ambient in free air
CHARACTERISTICS
BFX87
Collector cut-off current
BFX88
BFX88
-VCBO
-VCEO
-"c
-'CM
'EM
p
tot
T
stg
max.
max.
max.
max.
max.
max.
max.
50
50
600
600
600
600
40
40
V
V
mA
mA
mA
mW
°C
°C
T
J
-65to +
150
+ 200
R
thj-a
=
300
K/W
-ICBO
-ICBO
-V
CB
= 30V;I
E
= 0
-'CBO
-'CBO
typ.
max.
typ.
max.
typ.
max.
1.0
500
0.5
50
:
1.0
500
0.5
50
—
nA
nA
nA
nA
nA
nA
:
0.03
2.0
_
2.0
500
1.0
100
-V
CB
= 40 V; I
E
= 0; TJ - 100 °C
-VCB
~
30 V; IE - 0; TJ = 100 °C
Emitter cut-off current
-V
E B
-4.0V;I
C
"0
-V
EB
-3.0V;I
C
= 0
typ.
max.
typ.
max.
typ.
max.
M
MA
-ICBO
-'EBO
-'EBO
0.03 /iA
2.0 M
nA
nA
nA
nA
typ.
max.
BFX87
BFX88
DC current gain
-l
C
=1.0mA;-V
CE
= 10V
-I
C
= 10mA;-VCE = 10V
.
h
FE
h
FE
typ
'
.„
1Q5
^
^
-IG = 150mA;-VCE = iov
-I
C
= 500mA;-V
CE
= 10V
h
FE
h
FE
™
pn
-
^
jo
Jjj
Q 15
v
v
Collector-emitter saturation voltage
-I
C
= 150mA;-IB = 15mA
Base-emitter saturation voltage
-l
c
=30mA;-l
B
=1.0mA
-l
c
= 150mA; -1
B
= 15mA
Co I lector capacitance
-V
C B
-10V;l
E
= l
e
= 0;f=1.0MH
Z
Emitter capacitance
-V
EB
-2.0V;l
c
=l
c
=0;f=1.0MHz
Transition frequency
-l
c
=50mA;-V
C E
= 10V
;
f=100MHz;
'amb~
2 5
c
-VcE(sat)
-V
B
E(sat)
max
.
Q
'
AQ
max
.
„ ^^
0^90
\^
Rn
y
V
^
F
-V
B
E(sat) ^
C
c
C
e
^
™
8
p
^
°
T
T
typ
.
360
MH
z
Saturated switching times
Turn
-°
ntime
25
'°n
t
0
ff
DTT
n
n!
ns
ns
max.
typ.
'
r
max.
60
55
150
_
„ ..
Turn-off time
h-parameters
Measured at -l
c
= 10 mA; -V
CE
= 10 V; f = 1.0 kHz; T
amb
= 25 °C
Input impedance
Voltage feedback ratio
Forward current transfer ratio
Output admittance
hj
e
h
re
hf
e
h
oe
typ,
typ.
typ.
typ.
600
1.50x10'
4
155
104
/Jmho
SI
Microcontroller MCU
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