<$£.rnL-Condu<2toi ^P
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, iJna,
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
UHF power LDMOS transistor
FEATURES
• High power gain
• Easy power control
• Excellent ruggedness
• Designed to withstand abrupt load mismatch errors
• Source on underside eliminates DC isolators; reducing
common mode inductance
• Designed for broadband operation (UHF band)
• Internal input and output matching for high gain and
optimum broadband operation.
APPLICATIONS
• Communication transmitter applications in the UHF
frequency range.
3
4
BLF861A
PINNING - SOT540A
PIN
1
2
3
4
5
DESCRIPTION
drain 1
drain 2
gate 1
gate 2
source connected to flange
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS
push-pull transistor in a SOT540A package with ceramic
cap. The common source is connected to the mounting
flange.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common source 860 MHz test circuit.
MODE OF OPERATION
CW, class-AB
PAL BG (TV); class-AB
f
(MHz)
860
Top view
Fig.1 Simplified outline.
VDS
(V)
32
32
PL
(W)
150
GP
(dB)
>13.5
typ. 14.5
>14
TlD
{%)
>50
>40
AG
P
(dB)
<1
860 (ch 69)
>150
typ. 170
(peak sync)
note 1
Note
1. Sync compression: input sync > 33%; output sync 27%.
NJ .Semi-Coiidudors reserves rhe right (o change test conditions, parameter limits and packuge dimensions without notice
Information tumished by NJ Semi-Conductors"' believed to he hoih accurate and reliable ill the lime of going to press. However
Semi-C uiiJuuors .bsumcs no responsibility lor ;my errors nr uumsiiins JiscuvcreJ in its use NJ Seim-CtutchMurs ei
i. iiiti
1
mop; In VL'iil\m ih Has heels ire uirreni before plncina
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
drain-source voltage
gate-source voltage
drain current (DC)
total power dissipation
storage temperature
junction temperature
T
mb
<25°C
CONDITIONS
-
-
-
-
-65
-
MIN.
65
MAX.
V
V
A
W
°C
°C
±15
18
318
UNIT
V
DS
VGS
ID
Plot
T
s
tg
+150
200
T|
UHF power LDMOS transistor
THERMAL CHARACTERISTICS
SYMBOL
Rth i-mb
Rth mb-h
BLF861A
PARAMETER
thermal resistance from junction to mounting base
thermal resistance from mounting base to heatsink
CONDITIONS
T
mb
= 25°C;P,
ot
= 318W
VALUE
0.55
0.2
UNIT
K/W
K/W
CHARACTERISTICS
Tj = 25 °C; per section; unless otherwise specified.
SYMBOL
V(BR)DSS
VQSth
PARAMETER
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance
input capacitance
output capacitance
feedback capacitance
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
QS
= 0; ID = 1.5mA
VDS = 10V; ID = 150mA
VQS = 0; VDS = 32 V
V
G
s = V
G
sth + 9V;VDs = 10V
V
GS
= +15V;V
DS
= 0
V
DS
= 10V; I
D
= 4 A
V
GS
= V
GS
,h + 9V;l
D
= 4 A
65
4
-
18
-
-
-
-
-
-
-
-
4
160
82
40
6
-
5.5
2.2
-
25
-
-
-
-
-
V
V
HA
A
IDSS
bsx
IGSS
9fs
RDSon
Cj
SS
CQSS
C
res
nA
S
mO
pF
pF
PF
V
QS
= 0; V
DS
= 32 V; f = 1 MHz <
1
>
-
V
GS
= 0; VDS = 32 V; f = 1 MHz <
1
>
-
VQS = 0; V
DS
= 32 V; f = 1 MHz <
1
>
-
UHF power LDMOS transistor
BLF861A
APPLICATION INFORMATION
RF performance in a common source 860 MHz test circuit. T
h
= 25 °C; R
th mb
-h = 0.15 K/W; unless otherwise specified.
MODE OF
OPERATION
CW; class-AB
2-tone; class-AB
f
(MHz)
860
VDS
(V)
32
32
32
IDQ
(A)
1
1
1
PL
(W)
150
150 (PEP)
>150
typ. 170
(peak sync)
GP
(dB)
>13.5
typ. 14.5
>14
>14
Ho
(%)
>50
>40
>40
d,
m
(dBc)
AG
P
(dB)
<1
f! = 860
it =
860.1
860
PAL BG (TV); class-AB
(ch 69)
<-25
note 1
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