<SE.mi-Condu.ctoi. LPioaucti, Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
Triacs
BT136 series
GENERAL DESCRIPTION
Glass passivated triacs in a plastic
envelope, intended for use in
applications
requiring
high
bidirectional transient and blocking
voltage capability and high thermal
cycling
performance.
Typical
applications include motor control,
industrial and domestic lighting,
heating and static switching.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
BT136-
BT136-
BT136-
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
MAX.
500
500F
500G
500
4
25
MAX. MAX.
UNIT
600
800
600F 800F
600G 800G
600
800
4
25
4
25
•DRM
'r(RMS)
V
A
A
'TSM
PINNING - TO220AB
PIN
1
2
3
tab
PIN CONFIGURATION
SYMBOL
DESCRIPTION
main terminal 1
main terminal 2
gate
main terminal 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
"DRM
PARAMETER
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
CONDITIONS
MIN.
-
-500
500
1
MAX.
-600
600
1
4
25
27
3.1
50
50
50
10
2
5
5
0.5
150
125
UNIT
-800
800
V
A
A
A
A
2
s
M(RMS)
'TSM
I
2
t
dl
T
/dt
full sine wave; T
mb
< 107 °C
full sine wave; T
;
= 25 °C prior to
surge
t - 20 ms
t= 16.7ms
t = 10ms
ITM = 6 A; I
0
= 0.2 A;
dl
G
/dt = 0.2 A/us
T2+G+
T2+G-
T2-G-
T2-G+
-
-
_
-
-
-
-
-
-
-
-
-
-40
-
'GM
V
GM
p
~GM
PG(AV)
' stq
T
i
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
A/us
A/us
A/us
A/us
A
V
W
W
°C
over any 20 ms period
°C
VI Semi-C ondutlors reserves the right in change tot conditions. paranKter limits ;ind package dimensions \vithotil notice
Information furnished by NJ Scmi-C unductors i» believed to he holh accurate and reliable
M
the time of going to press. However VI
Scini-C imdiiciort .iiMiiiKs ihi rcsptnuibility for uny errors or ninivsiiins Jiituvcred in its use NJ Seini-CoinJuih<rs <:n<.'iiur:iaes
ri-.n ii'Cf; tn vcrifv ih n 'I:ita-;hcel3 .ire current herbrc placina unhfn
.
Triacs
BT136 series
THERMAL RESISTANCES
SYMBOL
p
^th
j-mb
Rth j-a
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
3.0
3.7
UNIT
K/W
K/W
KM
Thermal resistance
full cycle
junction to mounting base half cycle
Thermal resistance
in free air
junction to ambient
-
60
STATIC CHARACTERISTICS
T, = 25 °C unless otherwise stated
SYMBOL PARAMETER
IOT
CONDITIONS
BT136-
V
D
= 12V; I
T
= 0.1 A
T2+G+
T2+G-
T2-G-
T2-G+
V
D
= 1 2 V ; I
GT
= 0.1 A
T2+G+
T2+G-
T2-G-
T2-G+
V
D
= 1 2 V ; I
GT
= 0.1 A
I
T
= 5 A
V
D
= 12V; I
T
= 0.1 A
V
D
= 400V; I
T
= 0.1 A;
T,= 125°C
T^rr'
MIN.
-
-
-
.
-
.
.
-
-
.
-
TYP.
MAX.
...F
35
35
35
70
20
30
20
30
15
25
25
25
70
20
30
20
30
15
UNIT
...G
50
50
50
100
30
45
30
45
30
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
mA
Gate trigger current
5
8
11
30
7
16
5
7
5
1.4
0.7
0.4
0.1
IL
Latching current
IH
V
T
V
GT
Holding current
On-state voltage
Gate trigger voltage
Off-state leakage current
1.70
1.5
-
0.5
0.25
-
I
D
DYNAMIC CHARACTERISTICS
Ti - 25 °C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
BT136-
Critical rate of rise of
off-state voltage
Critical rate of change of
commutating voltage
Gate controlled turn-on
time
Tj = 125 °C; exponential
waveform; gate open
circuit
V
DM
= 400 V; T; = 95 'C;
dl
com
/dt= 1.8 A/ms; gate
open circuit
'TM
=
6 A; V
D
= V
DRM
/
max
>;
I
G
= 0.1 A;dl
G
/dt = 5A/ns
I
-
H
"'
4 A-
'T(RMS)
"DM
=
" '
">
VDRM(max)!
MIN.
100
...F
50
...G
200
TYP.
250
MAX.
-
UNIT
V/^is
dV
D
/dt
dV
com
/dt
-
-
10
50
-
V/^s
tgt
-
-
-
2
-
^
MCU
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