BTA312B series D and E
12 A Three-quadrant triacs high commutation
Rev. 01 — 26 April 2007
Product data sheet
1. Product profile
1.1 General description
Passivated, new generation, high commutation triacs in a SOT404 plastic single-ended
surface-mountable package
1.2 Features
I
Sensitive gate
I
Very high commutation performance
maximized at each gate sensitivity
I
High immunity to dV/dt
1.3 Applications
I
High power motor control - e.g. washing
I
Refrigeration and air conditioning
machines, vacuum cleaners
compressors
I
Electronic thermostats
1.4 Quick reference data
I
I
I
I
V
DRM
≤
600 V (BTA312B-600D)
V
DRM
≤
600 V (BTA312B-600E)
V
DRM
≤
800 V (BTA312B-800E)
I
TSM
≤
95 A (t = 20 ms)
I
I
I
I
I
GT
≤
5 mA (BTA312B-600D)
I
GT
≤
10 mA (BTA312B-600E)
I
GT
≤
10 mA (BTA312B-800E)
I
T(RMS)
≤
12 A
2. Pinning information
Table 1.
Pin
1
2
3
mb
Pinning
Description
main terminal 1 (T1)
main terminal 2 (T2)
gate (G)
mounting base; main terminal 2 (T2)
2
1
3
mb
T2
sym051
Simplified outline
Symbol
T1
G
SOT404 (D2PAK)
NXP Semiconductors
BTA312B series D and E
12 A Three-quadrant triacs high commutation
3. Ordering information
Table 2.
Ordering information
Package
Name
BTA312B-600D
BTA312B-600E
BTA312B-800E
D2PAK
Description
Version
plastic single-ended surface-mounted package (D2PAK); 3-leads (one lead SOT404
cropped)
Type number
4. Limiting values
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state current
Conditions
BTA312B-600D; BTA312B-600E
BTA312B-800E
full sine wave; T
mb
≤
101
°C;
see
Figure 4
and
5
full sine wave; T
j
= 25
°C
prior to
surge; see
Figure 2
and
3
t = 20 ms
t = 16.7 ms
I
2
t
dI
T
/dt
I
GM
P
GM
P
G(AV)
T
stg
T
j
[1]
[1]
Min
-
-
-
Max
600
800
12
Unit
V
V
A
-
-
-
-
-
-
95
105
45
100
2
5
0.5
+150
125
A
A
A
2
s
A/µs
A
W
W
°C
°C
I
2
t for fusing
rate of rise of on-state current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
t = 10 ms
I
TM
= 20 A; I
G
= 0.2 A;
dI
G
/dt = 0.2 A/µs
over any 20 ms period
-
−40
-
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The
rate of rise of current should not exceed 15 A/µs.
BTA312B_SER_D_E_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 26 April 2007
2 of 12
NXP Semiconductors
BTA312B series D and E
12 A Three-quadrant triacs high commutation
16
P
tot
(W)
12
003aab690
conduction
angle
(degrees)
30
60
90
120
180
form
factor
a
4
2.8
2.2
1.9
1.57
α
= 180°
120°
α
90°
60°
30°
8
4
0
0
3
6
9
I
T(RMS)
(A)
12
α
= conduction angle
Fig 1. Total power dissipation as a function of RMS on-state current; maximum values
003aab680
100
I
TSM
(A)
80
60
40
I
T
I
TSM
t
1/f
T
j(init)
= 25
°C
max
20
0
1
10
10
2
number of cycles (n)
10
3
f = 50 Hz
Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BTA312B_SER_D_E_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 26 April 2007
3 of 12
NXP Semiconductors
BTA312B series D and E
12 A Three-quadrant triacs high commutation
10
3
I
TSM
(A)
(1)
003aab691
10
2
I
T
I
TSM
t
t
p
T
j(init)
= 25
°C
max
10
10
-5
10
-4
10
-3
10
-2
t
p
(s)
10
-1
t
p
≤
20 ms
(1) dI
T
/dt limit
Fig 3. Non-repetitive peak on-state current as a function of pulse duration; maximum values
003aab687
003aab686
50
I
T(RMS)
(A)
40
15
I
T(RMS)
(A)
10
30
20
5
10
0
10
-2
10
-1
1
10
surge duration (s)
0
-50
0
50
100
150
T
mb
(°C)
f = 50 Hz
T
mb
= 101
°C
Fig 4. RMS on-state current as a function of surge
duration; maximum values
Fig 5. RMS on-state current as a function of mounting
base temperature; maximum values
BTA312B_SER_D_E_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 26 April 2007
4 of 12
NXP Semiconductors
BTA312B series D and E
12 A Three-quadrant triacs high commutation
5. Thermal characteristics
Table 4.
Symbol
R
th(j-mb)
R
th(j-a)
Thermal characteristics
Parameter
Conditions
Min
-
-
-
Typ
-
-
55
Max
2.0
1.5
-
Unit
K/W
K/W
K/W
thermal resistance from junction to half cycle; see
Figure 6
mounting base
full cycle; see
Figure 6
thermal resistance from junction to mounted on a printed
ambient
circuit board; minimum
footprint
10
Z
th(j-mb)
(K/W)
1
(1)
003aab775
10
−1
(2)
P
10
−2
t
p
t
10
−3
10
−5
10
−4
10
−3
10
−2
10
−1
1
t
p
(s)
10
(1) Unidirectional (half cycle)
(2) Bidirectional (full cycle)
Fig 6. Transient thermal impedance from junction to mounting base as a function of pulse duration
BTA312B_SER_D_E_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 26 April 2007
5 of 12
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