20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
BTX18-100/BTX18-200/BTX18-300
BTX18-400/BTX18-500
Anode to Cathode - Ratings
Voltage
1
)
SILICON THYRISTORS
Ratings
Continuous Reverse Voltage
Crest Working Reverse Voltage
Repetitive Peak Reverse Voltage
(5 = 0.01 ; f=50Hz)
Non-repetitive peak reverse voltage
(t<10ms)
Crest Working off-state Voltage
Continuous off-state Voltage
Repetitive peak off-state voltage
(8 = 0.01 ; f=50Hz)
Non-repetitive peak off-state voltage
(t<10ms)
BTX18- BTX18- BTX18- BTX18- BTX18-
100
200
300
400
500
Symbol
V
R
VRWM
VRRM
VRSM
100
100
120
120
100
100
120
120
200
200
240
240
200
200
240
240
300
300
350
350
300
300
350
350
400
400
500
500
400
400
500
500
500
500
600
600
500
500
600
600
V
V
V
V
V
V
VDWM
V
D
VDRM
VDSM
Currents
v
2
)
V
2
)
Symbol
Ij(AV)
Ratings
Average on-state current T
C
ASE=105°C
(averaged over any 20 T
A
MB=60°C, in
ms period)
free air
On-state Current (D.C.)
T
C
ASE=100°C
BTX18- BTX18- BTX18- BTX18- BTX18-
100
200
300
400
500
Max: 1.0
Max : 250
Max : 1 .6
Max : 1 .6
A
mA
A
A
IT
IT(RMS)
RMS on-state Current
«SP».
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Symbol
ITRM
ITSM
Ratings
Repetitive Peak on-state Current
Non-repetitive peak on-state current
t=10ms ; Tj=125°C prior to surge
Junction Temperature
Storage Temperature
BTX18- BTX18- BTX18- BTX18- BTX18-
100
200
300
400
500
Max: 10
10A
A
V
°C
Tj
Tsta
Max : 125°C
-55to+125°C
1) These ratings apply for zero or negative bias on the gate with respect to the cathode, and when a
resistor R<1 kii is connected between gate and cathode
2) The device is not suitable for operation in the forward breakover mode.
Gate to Cathode - Ratings
With 1£1 resistor between gate and cathode
Symbol
VFGM
VRGM
IFGM
PG<AV>
PGM
Ratings
Forward Peak Voltage
Reverse Peak Voltage
Forward Peak Current
Average Power Dissipation (averaged over
any 20 ms period)
Peak Power Dissipation
BTX18
-100
BTX18
-200
BTX18
-300
BTX18
-400
BTX18
-500
V
V
A
W
W
Max : 10
V
Max : 5 V
Max : 0.2
Max : 0.05
Max : 0.5
Temperatures
Symbol
R«i j-c
Rth J-a
Zthj-c
Ratings
From Junction to Case
From Junction to Ambient
Transient Thermal Resistance (t=10 ms)
BTX18
-100
BTX18
-200
BTX18
-300
10
200
2.5
BTX18
-400
BTX18
-500
°c/w
°c/w
°c/w
Anode to Cathode - Characteristics
Symbol
V
T
On State Voltage
I
T
=1 .0 A, Ti=25°C
Ratings
!
I
BTX18
-100
1.5
BTX18
-200
1.5
BTX18
-300
1.5
BTX18 BTX18
-400
-500
1.5
1.5
v
1
)
Symbol
IRM
'DM
IL
IH
Ratings
Peak Reverse Current
VRM=VRWmax i Tj=125°C
I
<
BTX18 BTX18 BTX18 BTX18 BTX18
-500
-100
-200
-300
-400
800
800
400
400
275
275
Typ: 10
200
200
160
160
HA
HA
Peak off-state Current
VDM
=
Vowmax i Tj=125°C
j
I
Latching current, Tj=125°C
Holding Current ; T,=25°C
j<
mA
mA
5.0
2
)
Gate to Cathode - Characteristics
Symbol
Ratings
Voltage that will trigger all devices
>
Tj=25°C
Voltage that will not trigger any device
<
Ti=125°C
Current that vill trigger all devices
I
Ti=25°C
|
BTX18 BTX18 BTX18 BTX18 BTX18
-100
-200 -300
-400
-500
VGT
V
GD
IGT
2.0
200
5.0
V
mV
mA
Switching Characteristics
Symbol
Ratings
I
Turn off time when switched from
IT=300 mA to IR=1 75 mA
I DM
BTX18 BTX18 BTX18 BTX18 BTX18
-100
-200
-300
-400
-500
T
r
25 C
i™
"'""'""" '
1 ^
|Ti=125C
|
<
i
i
Type : 20
|S
1
Typ : 35
800
400
275
200
160
US
Peak off-state Current
VDM
=
VDWITOX ; Tj=125°C
1) V
T
is measured along the leads at 1 cm from the case
2) Measurer under the following conditiond :
Anode sypply voltage= +6.0V
Initial on-state current after gate triggering= 50mA
The current is reduced until the device turns of.
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