BUV20 datasheet, PDF - EEWORLD Datasheet

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BUV20: DescriptionPOWER TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size83KB，3 Pages; ManufacturerNew Jersey Semiconductor; Websitehttp://www.njsemi.com

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BUV20 Overview

POWER TRANSISTOR

BUV20 Parametric

Parameter Name	Attribute value
Maker	New Jersey Semiconductor
package instruction	FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code	unknow
Maximum collector current (IC)	50 A
Collector-emitter maximum voltage	125 V
Configuration	SINGLE
JESD-30 code	O-MBFM-P2
Number of components	1
Number of terminals	2
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Terminal form	PIN/PEG
Terminal location	BOTTOM
Transistor component materials	SILICON
Nominal transition frequency (fT)	8 MHz

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£07

^£.mi-(2onauctoi

l/~\

One.

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

BUV20

NPN MULTI - EPITAXIAL

POWER TRANSISTOR

FEATURES

• HIGH CURRENT

• FAST SWITCHING

• HIGH RELIABILITY

APPLICATIONS

• Industrial Equipment

ABSOLUTE MAXIMUM RATINGS

case

= 25°C unless otherwise stated)

VCBO

VCER

VCEX

VCEO

VEBO

Collector - Base Voltage (I

= 0)

Collector - Emitter Voltage (R

= 100ii)

Collector - Emitter Voltage (V

= -1 ,5V)

Collector - Emitter Voltage (I

= 0)

Emitter - Base Voltage (l

= 0)

Collector Current

Peak Collector Current (t

= 10 ms)

Base Current

Total Power Dissipation at T^g < 25°C

Storage Temperature

Junction Temperature

160V

150V

160V

125V

50A

60A

10A

'CM

Ptot

Tstg*

250W

-65 to 200°C

200°C

Quality Semi-Conductors

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