, U
na.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
Silicon NPN Power Transistor
BUV41
DESCRIPTION
• Low Collector Saturation Voltage-
: V
C
E(sat)= 0.8V (Max.) @l
c
= 3A
• High Switching Speed
APPLICATIONS
• Designed for high current, high speed, high power
applications.
3
I
Absolute maximum ratings(Ta=25°C)
SYMBOL
VCEV
VCEO
VEBO
Ic
I CM
PIN 1.BASE
2. EMITTER
3. COLLECT OR (CASE)
,
Y
'V
PARAMETER
VALUE
300
200
7
15
20
3
5
120
200
UNIT
V
V
V
Collector-Emitter Voltage
V
BE
=-1.5V
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Base Current- Peak
Collector Power Dissipation
@T
C
=25"C
Junction Temperature
Storage Temperature Range
U
A
A
'••,
«
- I - D 2 PL
»U
1
U
^
S*~L^\
i
G
t
IB
A
A
W
*—&_§.— $
B
t
IBM
PC
Tj
Tslg
^*^_^s
t
mm
|
•-GE
DIM
A
B
i.'
MIN
MAX
3300
25.30
26.67
7 .SO
3.30
•c
r
-65-200
THERMAL CHARACTERISTICS
SYMBOL
D
E
G
H
K
L
1 ID
1 .40
1 .60
ID 92
546
11. *0 13.50
0.90
1675
1705
PARAMETER
Thermal Resistance, Junction to Case
MAX
1 .46
UNIT
_„,_„„.
„
„
R-th j-c
•c/w
0
V
30 00
4 Xi
30 20
4 50
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25°C unless otherwise specified
SYMBOL
PARAMETER
Collector-Emitter Sustaining Voltage
CONDITIONS
MIN
TYP.
BUV41
MAX
UNIT
VcEO(SUS)
l
c
= 0.2A; I
B
= 0; L= 25mH
200
V
V(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 50mA; l
c
= 0
I
C
=3A;I
B
=0.15A
7
V
VcE(sat)-1
Collector-Emitter Saturation Voltage
0.8
V
VcE(sat)-2
Collector-Emitter Saturation Voltage
I
C
=6A;I
B
=0.6A
0.9
V
VcE(sat)-3
Collector-Emitter Saturation Voltage
lc= 8A; I
B
= 1A
1.2
V
V
B
E(sat)-1
Base-Emitter Saturation Voltage
I
C
=6A;I
B
=0.6A
1.6
V
VeE(sat)-2
Base-Emitter Saturation Voltage
lc= 8A; I
B
= 1A
1.8
0.5
2.5
0.5
2.5
1.0
V
ICER
Collector Cutoff Current
V
C
E=300V;R
B
E=10n
V
CE
= 300V;R
B
E= 10 Q ;T
C
=100'C
V
C
E=300V;V
B
E=-1.5V
V
CE
= 300V;V
BE
= -1.5V;T
C
=100'C
V
EB
= 5V; l
c
= 0
mA
ICEV
Collector Cutoff Current
mA
IEBO
Emitter Cutoff Current
mA
Switching Times, Resistive Load
t
r
Rise Time
Storage Time
lc=8A;l
B
i=1A;V
C
c=160V;
R
B2
= 2.5 n ; V
BB
= -5V, t
p
= 30 u s
0.5
v-
s
ts
1.2
PS
tf
Fall Time
0.3
us
Power technology
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