C/
J
,
Lf na.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistors
BUY70A
DESCRIPTION
• Collector-Emitter Sustaining Voltage-
: V
CE
o(sus) = 400V(Min)
• Low Collector-Emitter Saturation Voltage-
tr 5.0V(Max.)@ l
c
= 4A
APPLICATIONS
• Designed for switching mode power supplies, inverters, and
CRT scanning systems.
3
I
1
PIN 1.BASE
2.BWIITTER
3. COLLECT OR (CASE)
Y
nt
ABSOLUTE MAXIMUM RATINGS(T
a
=25X:)
SYMBOL
VCBO
VCEO
VEBO
Ic
ICM
IB
PC
Tj
T
s
tg
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-peak
Base Current-Continuous
Collector Power Dissipation
VALUE
UNIT
'
TO-3 package
1000
400
8
10
15
3.0
75
200
V
V
V
A
A
A
W
DIM
°C
'C
A
B
<
—JU-D,
I
>
t
_,
C
t-K
r
i33
/^fTi ^
/
-
t
t
i__^._^
5
B
M
V^j
t
^
0
c
'
[ 1
T
v-
t
|*-L-»
*— u —*
Msa
nun
MM
MAX
3900
25.30 26.67
8.30
7m
090
1.10
140
1.60
546
11.40 13.50
1675 1705
19.40 1962
Junction Temperature
Storage Temperature Range
C
-65-200
D
E
H
K
L
N
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal Resistance.Junction to Case
MAX
2.3
UNIT
a
If
V
4.00
3000
430
420
3020
4.50
°c/w
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
T
C
=25°C unless otherwise specified
SYMBOL
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
DC Current Gain
Current-Gain— Bandwidth Product
Collector Output Capacitance
Fall Time
CONDITIONS
lc= 50mA;
\e=
0
lc=1mA; I
E
=0
l
E
=10mA;l
c
=0
lc= 4A; I
B
= 0.8A
lc= 4A; I
B
= 0.8A
V
CE
=1000V;V
B
E=-2V
lc=1A; V
CE
=10V
I
C
=0.5A; V
CE
=10V
I
E
= 0; VCB= 20V
|
c
= 4A; I
B1
= -|EK= 0.8A;
V
C
c= 40V
15
6
MIN
400
1000
8
BUY70A
TYP.
MAX
UNIT
V
V
V
VcEO(SUS)
V(BR)CBO
V(BR)EBO
VcE(sat)
5.0
1.5
1.0
V
V
mA
VeE(sat)
ICEX
llFE
ft
MHz
150
1.0
COB
t
f
pF
us
FPGA/CPLD
京公网安备 11010802033920号
EEWORLD
