CX
J.
E.IIS.U
i, Line.
TELEPHONE: (973) 376-2922
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
(212)227-6005
FAX: (973) 376-8960
Silicon NPN Power Transistors
BUY70B
DESCRIPTION
• Collector-Emitter Sustaining Voltage-
: V
CE
o(sus)= 325V(Min)
• Low Collector-Emitter Saturation Voltage-
: V
CE
(sat)= 5.0V(Max.)@ l
c
= 4A
APPLICATIONS
• Designed for switching mode power supplies, inverters, and
CRT scanning systems.
I
1
PIN 1.BASE
2. EMITTER
3. COLLECT OR (CASE)
TO-3 package
ABSOLUTE MAXIMUM RATINGS(T
a
=25'C)
SYMBOL
VCBO
VCEO
V
EBO
Ic
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-peak
Base Current-Continuous
Collector Power Dissipation
(oj 1 c~"
l
~
Junction Temperature
Storage Temperature Range
VALUE
800
325
8
10
15
3.0
75
200
UNIT
V
Y
^X.
'
«
A
«
V
V
A
A
A
W
t
f--N-*|
i
l
|
j
__i
l
C
-*!U~ D
3 fi
t
— u —••
I
t
B
ICM
IB
PC
Tj
T
stg
ft
f
/r-L*
/
j^
^\
-i
^—3-—^
G
>xP,X^
"-ES
DIM
A
B
C
D
E
H
K
L
N
Q
•c
•c
Iran
MN
IU
iX
3900
2530 26
67
780
090
t40
8. 30
1 10
1.50
-65-200
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal Resistance.Junction to Case
MAX
2.3
UNIT
U
"CM/
V
5.46
11. <0 13.50
1675 1?
as
19.40 13 52
400
4 20
30.00
*
20
430
4 50
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to he both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
Silicon NPN Power Transistors
ELECTRICAL
CHARACTERISTICS
BUY70B
T
C
=25°C unless otherwise specified
SYMBOL
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
DC Current Gain
Current-Gain— Bandwidth Product
Collector Output Capacitance
Fall Time
CONDITIONS
lc= 50mA; I
B
= 0
lc=1mA; I
E
=0
le=10mA;l
c
=0
lc= 4A; I
B
= 0.8A
|
c
= 4A; I
B
= 0.8A
V
CE
= 800V; V
BE
= -2V
lc=1A;V
C
E=10V
lc=0.5A; V
CE
=10V
!E= 0; VCB= 20V
lc= 4A; I
B
1= -lB2= 0.8A;
Vcc= 40V
15
6
150
1.0
MHz
PF
us
MIN
325
800
8
5.0
1.5
1.0
TYP.
MAX
UNIT
V
V
V
V
V
mA
VcEO(SUS)
V(BR)CBO
V(BR)EBO
VcE(sat)
VsE(sat)
ICEX
hFE
fr
COB
t
f
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