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BUZ80

Description
3.4 A, 800 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
CategoryDiscrete semiconductor    The transistor   
File Size114KB,5 Pages
ManufacturerNew Jersey Semiconductor
Websitehttp://www.njsemi.com
Download Datasheet Parametric View All

BUZ80 Overview

3.4 A, 800 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

BUZ80 Parametric

Parameter NameAttribute value
MakerNew Jersey Semiconductor
Reach Compliance Codeunknow
,
L/
nc.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
BUZ 80
N channel
Enhancement mode
Avalanche-rated
Pin1
Pin 2
D
Pin 3
Type
VDS
800V
ID
3.1 A
^DS(on)
Package
TO-220 AB
BUZ 80
4Q
Maximum Ratings
Parameter
Continuous drain current
Symbol
Values
3.1
Unit
A
ID
'Dpuls
7
C
= 28 °C
Pulsed drain current
T
c
= 25 °C
Avalanche current, limited by Tj
max
12.5
Avalanche energy, periodic limited by 7j
max
Avalanche energy, single pulse
'AR
£AR
£AS
3.1
8
mj
/
D
= 3.1 A, V
DD
= 50V, R
G
S = 25Q
L =
62.4 mH, 7j = 25 °C
Gate source voltage
Power dissipation
320
±20
Vfes
p
[ol
V
W
7
C
= 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
100
TI
^stg
^thJC
^thJA
-55... + 150
-55... + 150
<1.25
75
E
°C
K/W
55/150/56
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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