RazerThin
®
LEDs
CxxxRT290-S000
Cree’s RazerThin LEDs are a new generation of solid-state LED emitters that combine highly efficient InGaN materials
with Cree’s proprietary G•SiC® substrate to deliver superior price/performance for high-intensity blue and green
LEDs. These vertically structured LED chips are approximately 95 microns in height and require a low forward
voltage. Cree’s RazerThin series chips have the ability to withstand 1000V ESD. Applications for RazerThin LEDs
include next-generation keypad backlighting where sub-miniaturization and thinner form factors are required.
FEATURES
•
•
Thin 95 μm Chip
Reduced Forward Voltage
–
•
–
–
–
•
•
2.9V Typical at 5 mA
460nm - 3.8-11.1 mW
470nm - 3.4-10.4 mW
527nm - 1.7-6.0 mW
APPLICATIONS
•
Mobile Phone Key Pads
–
–
–
•
•
•
•
•
White LEDs
Blue LEDs
Green LEDs
RazerThin LED Performance
Cellular Phone LCD Backlighting
Digital Camera Flash for Mobile Appliance
Automotive Dashboard Lighting
LED Video Displays
Audio Product Display Lighting
Single Wire Bond Structure
Class 2 ESD Rating
CxxxRT290-S000 Chip Diagram
Top View
G•SiC LED Chip
270 x 270 μm
Mesa (junction)
246 x 246 μm
Gold Bond Pad
110 μm Diameter
Bottom View
Die Cross Section
D
PR3BU, Rev.
Datasheet: C
InGaN
Anode (+)
SiC Substrate
h = 95 μm
Backside
Metallization
Cathode (-)
Subject to change without notice.
www.cree.com
Maximum Ratings at T
A
= 25°C
Notes &3
DC Forward Current
Peak Forward Current (1/10 duty cycle @ 1kHz)
LED Junction Temperature
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Electrostatic Discharge Threshold (HBM)
Note 2
Electrostatic Discharge Classification (MIL-STD-883E)
Note 2
Typical Electrical/Optical Characteristics at T
A
= 25°C, If = 5mA
Part Number
Note 3
CxxxRT290-S000
30 mA
100 mA
125°C
5V
-40°C to +100°C
-40°C to +100°C
1000 V
Class 2
Forward Voltage (V
f
, V)
Min.
Typ.
2.9
2.9
2.9
Max.
3.1
3.1
3.2
Reverse Current
[I(Vr=5V), μA]
Max.
1
1
1
CxxxRT290-S000
Dimension
246 x 246
270 x 270
270 x 270
95
110
1.2
20
Tolerance
± 25
± 25
± 25
± 15
± 20
± 0.5
± 10
C460RT290-S0100
C470RT290-S0100
C527RT290-S0100
Mechanical Specifications
Description
P-N Junction Area (μm)
Top Area (μm)
Bottom Area (μm)
Chip Thickness (μm)
Au Bond Pad Diameter (μm)
Au Bond Pad Thickness (μm)
Back Contact Metal Width (μm)
2.7
2.7
2.6
Notes:
1.
2.
3.
4.
Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000 epoxy)
for characterization. Seller makes no representations regarding ratings for packages other than the T-1 3/4 package used by Seller.
The forward currents (DC and Peak) are not limited by the G•SiC die but by the effect of the LED junction temperature on the
package. The junction temperature limit of 125°C is a limit of the T-1 3/4 package; junction temperature should be characterized
in a specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds).
Product resistance to electrostatic discharge (ESD) is measured by simulating ESD using a rapid avalanche energy test (RAET).
The RAET procedures are designed to approximate the maximum ESD ratings shown. Seller gives no other assurances regarding
the ability of Products to withstand ESD.
All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled
and operated at 5 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are
the average values expected by Seller in large quantities and are provided for information only. Seller gives no assurances products
shipped will exhibit such typical ratings. All measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000
epoxy). Dominant wavelength measurements taken using Illuminance E.
For reference only, typical V
f
for C460, C470, and C527 is 3.2 V and at 20 mA.
Copyright © 2003-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree,
the Cree logo, G•SiC and RazerThin are registered trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
2
CPR3BU Rev. D
Standard Bins for RT290
All LED chips are sorted onto die sheets according to the bins shown below. All radiant flux values shown and specified
are at If = 20 mA (see Note 1) and all dominant wavelength values shown and specified are at If = 5 mA (see Note
2).
C460RT290-S000
C460RT290-0105
C460RT290-0101
C460RT290-0106
C460RT290-0102
C460RT290-0107
C460RT290-0103
C460RT290-0108
C460RT290-0104
11.1 mW
Radiant Flux
7.2 mW
3.8 mW
455 nm
457.5 nm
460 nm
Dominant Wavelength
C470RT290-S000
462.5 nm
465 nm
10.4 mW
Radiant Flux
6.7 mW
C470RT290-0105
C470RT290-0101
C470RT290-0106
C470RT290-0102
C470RT290-0107
C470RT290-0103
C470RT290-0108
C470RT290-0104
3.4 mW
465 nm
467.5 nm
470 nm
Dominant Wavelength
C527RT290-S000
472.5 nm
475 nm
Radiant Flux
6.0 mW
3.5 mW
C527RT290-0104
C527RT290-0101
C527RT290-0105
C527RT290-0102
C527RT290-0106
C527RT290-0103
1.7 mW
520 nm
525 nm
530 nm
535 nm
Dominant Wavelength
Notes:
1.
2.
3.
For reference only, radiant flux values at If = 5 mA are typically 29% and 32% of the corresponding radiant flux at If = 20 mA for
455-475 nm range and 520-535 nm range, respectively.
For reference only, wavelength values at If = 20 mA are typically 2 nm less and 7 nm less than the corresponding wavelength
values at If = 5 mA for 455-475 nm range and 520-535 nm range, respectively.
Sorted die dits may contain any or all of the bins shown above, respectively.
Copyright © 2003-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree,
the Cree logo, G•SiC and RazerThin are registered trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
3
CPR3BU Rev. D
Characteristic Curves
These are representative measurements for the RazerThin products. Actual curves will vary slightly for the various
radiant flux and dominant wavelength bins.
Forward Current vs Forward Voltage
30
10.00
8.00
Wavelength Shift vs Forward Current
25
6.00
4.00
20
Shift (nm)
2.00
0.00
-2.00
-4.00
If (mA)
15
10
-6.00
527nm
5
-8.00
470nm
-10.00
0
0.0
0.5
1.0
1.5
2.0
2.5
Volts
3.0
3.5
4.0
4.5
5.0
-12.00
0
5
10
15
If (mA)
20
25
30
Relative Intensity vs Forward Current
140
100%
Relative Intensity vs Wavelength - All Products
120
80%
Relative Intensity (%)
100
% Intensity
80
60%
60
40%
470 nm
527 nm
20%
40
20
0
0%
0
5
10
15
If (mA)
20
25
30
500
Wavelength (nm)
Copyright © 2003-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree,
the Cree logo, G•SiC and RazerThin are registered trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
4
CPR3BU Rev. D
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