D44C5 datasheet, PDF - EEWORLD Datasheet

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D44C5: Description4 A, 45 V, NPN, Si, POWER TRANSISTOR, TO-220AB; CategoryDiscrete semiconductor The transistor; File Size359KB，3 Pages; ManufacturerCentral Semiconductor

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4 A, 45 V, NPN, Si, POWER TRANSISTOR, TO-220AB

D44C5 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Central Semiconductor
Parts packaging code	TO-220AB
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	_compli
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	4 A
Collector-based maximum capacity	100 pF
Collector-emitter maximum voltage	45 V
Configuration	SINGLE
Minimum DC current gain (hFE)	20
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power dissipation(Abs)	30 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	50 MHz
VCEsat-Max	0.5 V

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D44C SERIES

w w w. c e n t r a l s e m i . c o m

SILICON

NPN POWER TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR D44C series

devices are silicon NPN power transistors designed for

general purpose amplifier and switching applications.

MARKING: FULL PART NUMBER

TO-220 CASE

D44C1 D44C4

D44C2 D44C5

D44C3 D44C6

5.0

4.0

6.0

-65 to +150

4.2

D44C7 D44C10

D44C8 D44C11

D44C9 D44C12 UNITS

°C

°C/W

MAXIMUM RATINGS:

(TC=25°C)

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Collector Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

SYMBOL

VCES

VCEO

VEBO

ICM

TJ, Tstg

ELECTRICAL CHARACTERISTICS:

(TC=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

ICES

VCE=Rated VCES

IEBO

VEB=5.0V

BVCEO

VCE(SAT)

VBE(SAT)

Cob

td+tr

IC=100mA (D44C1, 2, 3)

IC=100mA (D44C4, 5, 6)

IC=100mA (D44C7, 8, 9)

IC=100mA (D44C10, 11, 12)

IC=1.0A, IB=50mA

(D44C2, 3, 5, 6, 8, 9, 11, 12)

IC=1.0A, IB=100mA (D44C1, 4, 7, 10)

IC=1.0A, IB=100mA

VCB=10V, IE=0, f=1.0MHz

VCE=4.0V, IC=20mA

IC=1.0A, IB1=100mA

IC=1.0A, IB1=IB2=100mA

100

500

MAX

100

UNITS

μA

0.5

1.3

100

MHz

R1 (4-March 2014)

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