SLD343YT
4W High Power Laser Diode
Description
The SLD343YT has a compatible package, and
allows independent thermal and electric design.
It is a high power laser diode that affords easy
optical design.
Features
• High-optical power output
Recommended optical power output: P
O
= 4.0W
• High-optical power density: 4W/200µm
(Emitting line width)
Applications
• Solid state laser excitation
• Medical use
• Material processing
• Measurement
Structure
AlGaAs quantum well structure laser diode
Operating Lifetime
MTTF 10,000H (effective value)
at Po = 4.0W, Tth = 25°C
Absolute Maximum Ratings
(Tth = 25°C)
•
Optical power output
P
O
4.4
W
•
Reverse voltage
V
R
LD
2
V
PD 15
V
•
Operating temperature (Tth) Topr –10 to +30 °C
•
Storage temperature
Tstg –40 to +85 °C
Warranty
This warranty period shall be 90 days after receipt of the product or
1,000 hours operation time whichever is shorter.
Sony Quality Assurance Department shall analyze any product that
fails during said warranty period, and if the analysis results show
that the product failed due to material or manufacturing defects on
the part of Sony, the product shall be replaced free of charge.
Laser diodes naturally have differing lifetimes which follow a Weibull
distribution.
Special warranties are also available.
1
3
4
5
6
7
8
9
10
Case
LD
TH
PD
Preliminary
M-288
Equivalent Circuit
TE Cooler
Pin Configuration
(Top View)
No.
1
2
3
4
5
6
7
8
9
10
Case
Laser diode (anode)
Thermistor
Thermistor
Laser diode (cathode)
Photo diode (anode)
Photo diode (cathode)
TE cooler (positive)
Function
TE cooler (negative)
—
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
–1–
PE00198-PS
SLD343YT
Electrical and Optical Characteristics
Item
Threshold current
Operating current
Operating voltage
Wavelength
∗
Radiation angle
Perpendicular
Parallel
Position
Positional accuracy
Angle
Symbol
Ith
Iop
Vop
λ
P
θ⊥
θ//
∆X, ∆Y
∆φ⊥
∆φ//
η
D
Imon
Rth
P
O
= 4.0W
P
O
= 4.0W
V
R
= 10V
Tth = 25°C
P
O
= 4.0W
P
O
= 4.0W
P
O
= 4.0W
P
O
= 4.0W
P
O
= 4.0W
Conditions
(Tth = Thermistor temperature, Tth = 25°C)
Min.
Typ.
1.0
4.6
2.0
790
10
5
23
10
Max.
2.0
6.5
3.0
840
35
15
±100
±3
±4
0.5
0.2
1.1
1.0
10
1.5
4.0
Unit
A
A
V
nm
degree
degree
µm
degree
degree
W/A
mA
kΩ
Differential efficiency
Monitor current
Thermistor resistance
∗
Wavelength Selection Classification
Type
SLD343YT-1
SLD343YT-2
SLD343YT-3
Type
SLD343YT-21
SLD343YT-24
SLD343YT-25
Wavelength (nm)
795 ± 5
810 ± 10
830 ± 10
Wavelength (nm)
798 ± 3
807 ± 3
810 ± 3
Handling Precautions
Eye protection against laser beams
The optical output of laser diodes ranges from
several mW to 10W. However the optical power
density of the laser beam at the diode chip
reaches 1.5MW/cm
2
. Unlike gas lasers, since
laser diode beams are divergent, uncollimated
laser diode beams are fairly safe at a laser
diode. For observing laser beams, ALWAYS use
safety goggles that block infrared rays. Usage of
IR scopes, IR cameras and fluorescent plates is
also recommended for monitoring laser beams
safely.
Laser diode
Lens
Optical
material
Safety goggles for
protection from
laser beam
IR fluorescent plate
Optical board
Optical power output control device
Temperature control device
–2–
Microcontroller MCU
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