SLD322XT
0.5W High Power Laser Diode
Description
The SLD322XT is a high power, gain-guided laser diode produced
by MOCVD method
∗
1
. Compared to the SLD300 Series, this laser
diode has a high brightness output with a doubled optical density
which can be achived by QW-SCH structure
∗
2
.
Fine adjustment of the oscillation wavelength is possible by controlling
the temperature using the built-in TE cooler (Peltier element).
∗
1
MOCVD: Metal Organic Chemical Vapor Deposition
∗
2
QW-SCH: Quantum Well Separate Confinement Heterostructure
Features
•
High power
Recommended optical power output: Po = 0.5W
•
Low operating current: Iop = 0.75A (Po = 0.5W)
•
Flat package with built-in photodiode, TE cooler, and thermistor
Applications
•
Solid state laser excitation
•
Medical use
•
Material processes
•
Measurement
Structure
AlGaAs quantum well structure laser diode
Operating Lifetime
MTTF 10,000H (effective value) at Po = 0.5W, Tth = 25°C
Absolute Maximum Ratings
(Tth = 25°C)
•
Optical power output
Po
•
Reverse voltage
V
R
LD
PD
•
Operating temperature (Tth)
Topr
•
Storage temperature
Tstg
Equivalent Circuit
TE Cooler
N
P
T
H
LD
PD
1
2
3
4
5
6
7
8
Pin Configuration
(Top View)
No.
1
2
3
4
5
6
7
8
W
V
V
°C
°C
Function
TE cooler (negative)
Thermistor lead 1
Thermistor lead 2
Laser diode (anode)
Laser diode (cathode)
Photodiode (cathode)
Photodiode (anode)
TE cooler (positive)
0.55
2
15
–10 to +30
–40 to +85
Warranty
This warranty period shall be 90 days after receipt of the product or
1,000 hours operation time whichever is shorter.
Sony Quality Assurance Department shall analyze any product that
fails during said warranty period, and if the analysis results show
that the product failed due to material or manufacturing defects on
the part of Sony, the product shall be replaced free of charge.
Laser diodes naturally have differing lifetimes which follow a Weibull
distribution.
Special warranties are also available.
1
8
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
–1–
E93206B02-PS
SLD322XT
Electrical and Optical Characteristics
Item
Threshold current
Operating current
Operating voltage
Wavelength
∗
Monitor current
Radiation angle
Perpendicular
Parallel
Positional accuracy
Differential efficiency
Thermistor resistance
Position
Angle
Symbol
Ith
Iop
Vop
λp
Imon
θ⊥
θ//
∆X, ∆Y
∆φ⊥
η
D
Rth
P
O
= 0.5W
P
O
= 0.5W
P
O
= 0.5W
P
O
= 0.5W
V
R
= 10V
P
O
= 0.5W
Conditions
(Tth: Thermistor temperature, Tth = 25°C)
Min.
Typ.
0.18
0.75
2.1
790
0.15
20
4
0.8
30
9
Max.
0.3
1.2
3.0
840
3.0
40
17
±100
±3
P
O
= 0.5W
Tth = 25°C
0.5
0.9
10
Unit
A
A
V
nm
mA
degree
degree
µm
degree
W/A
kΩ
P
O
= 0.5W
∗
Wavelength Selection Classification
Type
SLD322XT-1
SLD322XT-2
SLD322XT-3
Type
SLD322XT-21
SLD322XT-24
SLD322XT-25
Wavelength (nm)
795 ± 5
810 ± 10
830 ± 10
Wavelength (nm)
798 ± 3
807 ± 3
810 ± 3
Handling Precautions
Eye protection against laser beams
The optical output of laser diodes ranges from
several mW to 3W. However the optical power
density of the laser beam at the diode chip
reaches 1MW/cm
2
. Unlike gas lasers, since
laser diode beams are divergent, uncollimated
laser diode beams are fairly safe at a laser
diode. For observing laser beams, ALWAYS use
safety goggles that block infrared rays. Usage of
IR scopes, IR cameras and fluorescent plates is
also recommended for monitoring laser beams
safely.
Laser diode
Lens
Optical
material
Safety goggles for
protection from
laser beam
IR fluorescent plate
AP
C
ATC
Optical boad
Optical power output control device
temperature control device
–2–
SLD322XT
Example of Representative Characteristics
Optical power output vs. Forward current characteristics
1000
Tth = 0°C
Po – Optical power output [mW]
800
Tth = 0°C
600
Tth = –10°C
Tth = 30°C
400
Tth = 25°C
Po – Optical power output [mW]
500
Tth = –10°C
Tth = 30°C
Optical power output vs. Monitor current characteristics
Tth = 25°C
250
200
0
200
400
600
800
1000
0
0
0.5
Imon – Monitor current [mA]
1.0
I
F
– Forward current [mA]
Threshold current vs. Temperature characteristics
1000
Power dependence of far field pattern
(Parallel to junction)
Tth = 25°C
Ith – Threshold current [mA]
500
Radiation intensity (optional scale)
P
O
= 500mW
P
O
= 400mW
P
O
= 300mW
P
O
= 200mW
P
O
= 100mW
100
–10
0
10
20
30
–90
–60
–30
0
30
60
90
Tth – Thermistor temperature [°C]
Angle [degree]
Power dependence of far field pattern
(Perpendicular to junction)
Tth = 25°C
Radiation intensity (optional scale)
Temperature dependence of far field pattern
(Parallel to junction)
P
O
= 500mW
Radiation intensity (optional scale)
–90
–60
–30
0
P
O
= 500mW
P
O
= 400mW
P
O
= 300mW
P
O
= 200mW
P
O
= 100mW
30
60
90
Tth = 25°C
Tth = 10°C
Tth = –5°C
–90
–60
–30
0
30
60
90
Angle [degree]
Angle [degree]
–3–
SLD322XT
Temperature dependence of far field pattern
(Perpendicular to junction)
820
P
O
= 500mW
Radiation intensity (optional scale)
Dependence of wavelength
Po = 500mW
lp – Wavelength [nm]
Tth = 25°C
Tth = 10°C
Tth = –5°C
–60
–30
0
30
60
90
810
800
–90
790
–10
0
10
20
30
Angle [degree]
Tth – Thermistor temperature [°C]
Differential efficiency vs. Temperature characteristics
50
η
D
– Differential efficiency [W/A]
1.0
Rth – Thermistor resistance [kΩ]
Thermistor characteristics
10
0.5
5
0
–10
0
10
20
30
1
–10 0 10 20 30 40 50 60 70
Tth – Thermistor temperature [°C]
Tth – Thermistor temperature [°C]
TE cooler characteristics
TE cooler characteristics 1
10
Tc = 33°C
10
Tth = 25°C
TE cooler characteristics 2
Q – Absorbed heat [W]
Q – Absorbed heat [W]
V
T
– Pin voltage [V]
2.0A
5
5
4
5
5
1.5A
4
3
2
1.5A
1.0A
3
2
1.0A
∆
T
0.5A
0.
0
0
0.5A
5
0.
A
VS
2.0A
2.
5A
1
0
1.
Q
2.0A
2.
0A
1.5A
50
1
5A
5A
0
0
50
100
100
0
∆T
– Temperature difference [°C]
∆T:
Tc – Tth
Tth: Thermistor temperature
Tc: Case temperature
∆T
[°C]
–4–
V
T
– Pin voltage [V]
∆T
VS
V
T
I
T
= 2.5A
∆
T
VS
V
I
T
= 2.5A
2.0A
∆
T
VS
5
1.
A
1.
0A
Q
SLD322XT
Power dependence of spectrum
1.0
Tth = 25°C
Po = 0.2W
0.8
Relative radiant intensity
Relative radiant intensity
1.0
Tth = 25°C
Po = 0.3W
0.8
0.6
0.6
0.4
0.4
0.2
0.2
796
798
800
802
804
796
798
800
802
804
Wavelength [nm]
Wavelength [nm]
1.0
Tth = 25°C
Po = 0.4W
0.8
Relative radiant intensity
Relative radiant intensity
1.0
Tth = 25°C
Po = 0.5W
0.8
0.6
0.6
0.4
0.4
0.2
0.2
796
798
800
802
804
796
798
800
802
804
Wavelength [nm]
Wavelength [nm]
–5–
Microcontroller MCU
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