EEWORLDEEWORLDEEWORLD

Part Number

Search

SLD322XT

Description
0.5W High Power Laser Diode
CategoryLED optoelectronic/LED    photoelectric   
File Size69KB,7 Pages
ManufacturerSONY
Websitehttp://www.sony.co.jp
Download Datasheet Parametric Compare View All

SLD322XT Overview

0.5W High Power Laser Diode

SLD322XT Parametric

Parameter NameAttribute value
MakerSONY
package instructionM-273(LO-10), 8 PIN
Reach Compliance Codeunknow
ConfigurationSINGLE WITH BUILT-IN PHOTO DIODE, THERMISTOR AND TE COOLER
Number of functions1
Maximum operating temperature30 °C
Minimum operating temperature-10 °C
Optoelectronic device typesLASER DIODE
Nominal output power500 mW
peak wavelength790 nm
shapeROUND
size5 mm
Maximum threshold current300 mA
SLD322XT
0.5W High Power Laser Diode
Description
The SLD322XT is a high power, gain-guided laser diode produced
by MOCVD method
1
. Compared to the SLD300 Series, this laser
diode has a high brightness output with a doubled optical density
which can be achived by QW-SCH structure
2
.
Fine adjustment of the oscillation wavelength is possible by controlling
the temperature using the built-in TE cooler (Peltier element).
1
MOCVD: Metal Organic Chemical Vapor Deposition
2
QW-SCH: Quantum Well Separate Confinement Heterostructure
Features
High power
Recommended optical power output: Po = 0.5W
Low operating current: Iop = 0.75A (Po = 0.5W)
Flat package with built-in photodiode, TE cooler, and thermistor
Applications
Solid state laser excitation
Medical use
Material processes
Measurement
Structure
AlGaAs quantum well structure laser diode
Operating Lifetime
MTTF 10,000H (effective value) at Po = 0.5W, Tth = 25°C
Absolute Maximum Ratings
(Tth = 25°C)
Optical power output
Po
Reverse voltage
V
R
LD
PD
Operating temperature (Tth)
Topr
Storage temperature
Tstg
Equivalent Circuit
TE Cooler
N
P
T
H
LD
PD
1
2
3
4
5
6
7
8
Pin Configuration
(Top View)
No.
1
2
3
4
5
6
7
8
W
V
V
°C
°C
Function
TE cooler (negative)
Thermistor lead 1
Thermistor lead 2
Laser diode (anode)
Laser diode (cathode)
Photodiode (cathode)
Photodiode (anode)
TE cooler (positive)
0.55
2
15
–10 to +30
–40 to +85
Warranty
This warranty period shall be 90 days after receipt of the product or
1,000 hours operation time whichever is shorter.
Sony Quality Assurance Department shall analyze any product that
fails during said warranty period, and if the analysis results show
that the product failed due to material or manufacturing defects on
the part of Sony, the product shall be replaced free of charge.
Laser diodes naturally have differing lifetimes which follow a Weibull
distribution.
Special warranties are also available.
1
8
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
–1–
E93206B02-PS

SLD322XT Related Products

SLD322XT SLD322XT-3 SLD322XT-21 SLD322XT-25 SLD322XT-2 SLD322XT-24 SLD322XT-1
Description 0.5W High Power Laser Diode 0.5W High Power Laser Diode 0.5W High Power Laser Diode 0.5W High Power Laser Diode 0.5W High Power Laser Diode 0.5W High Power Laser Diode 0.5W High Power Laser Diode
Maker SONY SONY SONY SONY SONY SONY SONY
package instruction M-273(LO-10), 8 PIN M-273(LO-10), 8 PIN M-273(LO-10), 8 PIN M-273(LO-10), 8 PIN M-273(LO-10), 8 PIN M-273(LO-10), 8 PIN M-273(LO-10), 8 PIN
Reach Compliance Code unknow unknow unknow unknow unknow unknow unknow
Configuration SINGLE WITH BUILT-IN PHOTO DIODE, THERMISTOR AND TE COOLER SINGLE WITH BUILT-IN PHOTO DIODE, THERMISTOR AND TE COOLER SINGLE WITH BUILT-IN PHOTO DIODE, THERMISTOR AND TE COOLER SINGLE WITH BUILT-IN PHOTO DIODE, THERMISTOR AND TE COOLER SINGLE WITH BUILT-IN PHOTO DIODE, THERMISTOR AND TE COOLER SINGLE WITH BUILT-IN PHOTO DIODE, THERMISTOR AND TE COOLER SINGLE WITH BUILT-IN PHOTO DIODE, THERMISTOR AND TE COOLER
Number of functions 1 1 1 1 1 1 1
Maximum operating temperature 30 °C 30 °C 30 °C 30 °C 30 °C 30 °C 30 °C
Minimum operating temperature -10 °C -10 °C -10 °C -10 °C -10 °C -10 °C -10 °C
Optoelectronic device types LASER DIODE LASER DIODE LASER DIODE LASER DIODE LASER DIODE LASER DIODE LASER DIODE
Nominal output power 500 mW 500 mW 500 mW 500 mW 500 mW 500 mW 500 mW
peak wavelength 790 nm 830 nm 798 nm 810 nm 810 nm 807 nm 795 nm
shape ROUND ROUND ROUND ROUND ROUND ROUND ROUND
size 5 mm 5 mm 5 mm 5 mm 5 mm 5 mm 5 mm
Maximum threshold current 300 mA 300 mA 300 mA 300 mA 300 mA 300 mA 300 mA
Maximum forward voltage - 3 V 3 V 3 V 3 V 3 V 3 V
Installation features - THROUGH HOLE MOUNT THROUGH HOLE MOUNT THROUGH HOLE MOUNT THROUGH HOLE MOUNT THROUGH HOLE MOUNT THROUGH HOLE MOUNT
Spectral bandwidth - 1e-8 m 3e-9 m 3e-9 m 1e-8 m 3e-9 m 5e-9 m
surface mount - NO NO NO NO NO NO
LPC1500 experience + ADC timing conversion
[b]Design background:[/b] 1. Select LPC1518, compile environment keil5, jlink 2. Function application: ADC0_9 monitors the change of a certain power supply [b]A. Sharing of development and debugging e...
xiaotianwang78 NXP MCU
sersontile's Bluemicrosystem2, DataLog firmware library code analysis
1. Bluemicrosystem2 Start from the main function: First initialize HAL_Init(); Then configure the clock SystemClock_Config(); #ifdef STM32_NUCLEO InitTargetPlatform(TARGET_NUCLEO); #elif STM32_SENSORT...
1059682127 MEMS sensors
Discussion: 5G NSA vs SA? (Reply to receive 20-100 ChipCoins)
The government has explicitly required that 5G no longer support NSA mode (non-standalone networking) mobile phones to access the network, and all 5G terminal products must have SA mode (standalone ne...
EEWORLD社区 RF/Wirelessly
DSP external device connection interface HPI
Through the host interface HPI, the external host can directly access the dual access RAM (DARAM) inside the DSP. HPI allows the external host processor to directly access part of the memory in the DS...
Aguilera DSP and ARM Processors
How GaN has changed the market (Part 1)
This chapter will explore how Gallium Nitride (GaN) is being used in existing and new military, aerospace, and commercial applications. As technology advances, GaN is becoming more and more popular wi...
石榴姐 RF/Wirelessly
How to develop applications in wince 6.0?
How to develop applications in WinCE 6.0? Should I write applications directly in Platform Builder? I set up a smart device project in VS2005. Whether I use the SDK I exported or the built-in pocket P...
xiangzi Embedded System

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 967  1003  1143  395  1529  20  21  24  8  31 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号