,
Li
ne.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
MAC218
Triacs
Silicon Bidirectional Thyristors
. . . designed primarily for full-wave ac control applications, such as light dimmers,
motor controls, heating controls and power supplies.
•
•
•
•
Blocking Voltage to 800 Volts
Glass Passivated Junctions for Greater Parameter Uniformity and Stability
TO-220 Construction Low Thermal Resistance, High Heat Dissipation and
Durability
Gate Triggering Guaranteed in Three Modes (MAC218 Series) or Four Modes
(MAC218A Series)
TRIACs
8 AMPERES RMS
200 thru 800 VOLTS
MAC218A
MT2 O
'
MT1
(TO-220AB)
MAXIMUM RATINGS
(Tj = 25°C unless otherwise noted.)
Rating
Peak Repetitive Off-State VoltageO)
(Gate Open, Tj = 25 to 125°C)
MAC218-4, MAC218A4
MAC218-6, MAC218A6
MAC218-8, MAC218A8
MAC218-10, MAC218A10
Symbol
Value
200
400
600
800
8
Unit
Volts
VDRM
On-State Current RMS
(Conduction Angle = 360°, TC = +80°C)
Peak Non-repetitive Surge Current
(One Full Cycle, 60 Hz, TC = 80°C, preceded and followed by rated current)
Fusing Current
(t = 8.3 ms)
Peak Gate Power
(T
C
= +80°C, Pulse Width = 2 us)
Average Gate Power
(Tc = +80°C, t = 8.3 ms)
Peak Gate Trigger Current
(Pulse Width = 1 us)
Operating Junction Temperature Range
Storage Temperature Range
'T(RMS)
Amps
Amps
A2
S
'TSM
|2
t
100
40
PGM
P
G(AV)
16
Watts
Watt
Amps
°C
0.35
4
IGTM
TJ
T
stg
^10 to +125
-40to+150
°c
1. VQRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
Quality Semi-Conductors
MAC218 Series MAC218A Series
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (T
c
= 25°C unless otherwise noted.)
Characteristic
Peak Blocking Current
(V
D
= Rated VDRM. gate open)
Tj = 25°C
Tj = 125°C
Symbol
Min
—
Symbol
Max
2.2
Unit
°C/W
RBJC
Typ
—
1.7
Max
Unit
MA
mA
!DRM
10
2
2
Peak On-State Voltage (Either Direction)
(IjM = 11.3 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle < 2%)
Gate Trigger Current (Continuous dc)
(VD = 12Vdc, R|_ = 12Q)
Trigger Mode
MT2(+), Gate(+); MT2(+), Gate(-); MT2(-), Gate(-)
MT2(-), Gate(+) "A" SUFFIX ONLY
Gate Trigger Voltage (Continuous dc)
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
MT2(-), G(+) "A" SUFFIX ONLY
(Main Terminal Voltage = Rated VDRM, RL = 10 kQ, Tj = +125°C)
MT2(+), G(+); MT2(-), G(-); MT2(+), G(-)
MT2(-), G(+) "A" SUFFIX ONLY
Holding Current (Either Direction)
(V
D
= 24 Vdc, Gate Open,
Initiating Current = 200 mA)
Critical Rate of Rise of Commutating Off-State Voltage
(VD = Rated VDRM, ITM = 11 .3 A, Commutating
di/dt = 4.1 A/ms, Gate Unenergized, TC = 80°C)
Critical Rate of Rise of Off-State Voltage
(Vrj = Rated VDRM. Exponential Voltage Rise, Gate Open,
Tj = 125°C)
VTM
IGT
—
Volts
mA
—
—
50
75
VGT
0.9
0.9
1.1
1.4
0.2
0.2
2
2
2
2.5
Volts
IH
dv/dt(c)
~
~
"
~
5
50
mA
"
"
V/ns
dv/dt
100
V/us
FIGURE 1 — CURRENT DERATING
FIGURE 2 — POWER DISSIPATION
,
,
.
.
«• 10|
1
1
1
1
1
1
1
1
1
1
1
1
1
<£-
Ql^—J
1
1
1
1
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
l-r(RMS).
RMSONSTATE
CURRENT (AMPS)
IT(RMS)
RMSONSTATE
CURRENT (AMPS)
Embedded System
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