, O
ne.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
Silicon Controlled Rectifier
Reverse Blocking Triode Thyristor
... designed for industrial and consumer applications such as temperature, light
and speed control; process and remote controls; warning systems; capacitive
discharge circuits and MPU interface.
• Center Gate Geometry for Uniform Current Density
• All Diffused and Glass-Passivated Junctions for Parameter Uniformity and
Stability
• Small, Rugged Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
• Low Trigger Currents, 200 jiA Maximum for Direct Driving from Integrated
Circuits
MCR72-1
thru
MCR72-8
SCR*
8 AMPERES RMS
25 thru 600 VOLTS
TO-220AB
MAXIMUM RATINGS
Rating
Peak Repetitive Forward and Reverse Blocking Voltage (Note 1)
(Tj = -40 to 110°C)
(1/2 Sine Wave, RQK = 1 Ml)
-1
-2
-3
MCR72
-4
•5
-6
-7
-8
On-State RMS Current (TC = 83°C)
Peak Non-Repetitive Surge Current
(1/2 Cycle, 60
Hi,
Tj = -40 to 110°C)
Circuit Fusing (t = 1 to 8.3 ms)
Peak Gate Voltage (t «; 10 /«>)
Peak Gate Current (t =£ 10 /is)
Peak Gate Power (t =s 10
fj.s)
Average Gate Power
Operating Junction Temperature Range
Symbol
Value
Unit
Volts
VDRM
or
VRRM
25
50
100
200
300
400
500
600
ITIRMSI
ITSM
|2t
8
100
40
±5
1
5
0.75
Amps
Amps
A2s
VGM
IGM
PGM
P
G(AV)
Volts
Amp
Watts
Watts
TJ
-40 to
+110
•c
(com.)
Note .1- Ratings apply for negative gate voltage or RQK = 1 kfl Devices shall not hive a positive gate voltaga concurrently with a
:?;.
J
negative voltage on the anode. Devices should not be tested with a constant current source for forward and reverse
blocking capability such that the voltage applied exceeds the rated blocking voltage.
Quality Semi-Conductors
MCR70
• MCR71 S«ri«s
ELECTRICAL CHARACTERISTICS
(T
c
- 25°C unl«i> otherwise noted.)
Characteristic
Peak Forward or Reverse Blocking Current (Note 1)
(Rated V
DRM
or V
RRM
) Tj = 26°C
Tj = 125"C
On-State Voltage (Note 2)
«TM - 70 A)
(I
TM
-175A)
HTM - 860 A, t
w
- 1 ms) Note 3
HTM - 1700 A, t
w
- 1 ma) Note 3
Gate Trigger Current
MCR70 series
MCR71, aeries
MCR70 series
MCR71 series
Symbol
'DRM. IRRM
Rnin
Typ
—
Max
10
2
1.85
Unit
^A
mA
Volts
—
" "—
VTM
1.5
1.7
6
7
10
2-1
(VD - 12 v, RL - 100 m
(VD - 12 Vote, RL - 100 n>
'GT
VGT
2
30
mA
volt*
Gate Trigger Voltage
1
0.2
3
15
30
—
1.5
60
60
—
(V
D
- Rated V
DRM
, RL - 1 Ml. Tj - 125"C)
Holding Current
OTM - 0.5 A, Gate-Open)
Latching Current
(V
D
- 12
Vdc,
IQ - 150 mA, t
r
* 60
/is)
Critical Rate-of-Rise of Off-State Voltage
(VD - Rated VQRM- Gate Open, Exponential Waveform, TC - 125°C)
Turn-On Time (Note 3)
(V
D
- Rated VDRM. 'G = 150 mA)
(ITM "
70
Amps, peak)
OTM • 11° A™
0
*- PM
k
>
IH
IL
dv/dt
mA
mA
V//is
—
10
ton
MCR70 series
MCR?
1
MrlM
_
1
1.2
ia
—
Notaa: 1. Tha ratad voKagaa can ba appllad ovar tha ratad oparating junction tamparaturaa without Incurring damaga. Ratings apply for ihortad-
opan or ahortad-gata condition or nagatlva vottaga on tha gata. Davlcai should not ba taatad for blocking capability In a mannar luch that
tha voltaga auppllad axcaadi tha ratad blocking voKagaa.
2. Duty Cyeta « 1%, Pulaa WMtti « 300
to.
3. Charactariatlc appll** for t^ - 1 ma. tw ia daflnad aa 6 tima conatanta of an axponantlallv daoaylng currant pulaa.
4. The gata oontrollad tum-on tima in a crowbar drcutt witl ba Influancad by tha dreutt induetanea.
Embedded System
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