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MCR72-6

Description
Silicon Controlled Rectifiers
CategoryAnalog mixed-signal IC    Trigger device   
File Size84KB,3 Pages
ManufacturerNew Jersey Semiconductor
Websitehttp://www.njsemi.com
Download Datasheet Parametric Compare View All

MCR72-6 Overview

Silicon Controlled Rectifiers

MCR72-6 Parametric

Parameter NameAttribute value
MakerNew Jersey Semiconductor
Reach Compliance Codeunknown
, O
ne.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
Silicon Controlled Rectifier
Reverse Blocking Triode Thyristor
... designed for industrial and consumer applications such as temperature, light
and speed control; process and remote controls; warning systems; capacitive
discharge circuits and MPU interface.
• Center Gate Geometry for Uniform Current Density
• All Diffused and Glass-Passivated Junctions for Parameter Uniformity and
Stability
• Small, Rugged Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
• Low Trigger Currents, 200 jiA Maximum for Direct Driving from Integrated
Circuits
MCR72-1
thru
MCR72-8
SCR*
8 AMPERES RMS
25 thru 600 VOLTS
TO-220AB
MAXIMUM RATINGS
Rating
Peak Repetitive Forward and Reverse Blocking Voltage (Note 1)
(Tj = -40 to 110°C)
(1/2 Sine Wave, RQK = 1 Ml)
-1
-2
-3
MCR72
-4
•5
-6
-7
-8
On-State RMS Current (TC = 83°C)
Peak Non-Repetitive Surge Current
(1/2 Cycle, 60
Hi,
Tj = -40 to 110°C)
Circuit Fusing (t = 1 to 8.3 ms)
Peak Gate Voltage (t «; 10 /«>)
Peak Gate Current (t =£ 10 /is)
Peak Gate Power (t =s 10
fj.s)
Average Gate Power
Operating Junction Temperature Range
Symbol
Value
Unit
Volts
VDRM
or
VRRM
25
50
100
200
300
400
500
600
ITIRMSI
ITSM
|2t
8
100
40
±5
1
5
0.75
Amps
Amps
A2s
VGM
IGM
PGM
P
G(AV)
Volts
Amp
Watts
Watts
TJ
-40 to
+110
•c
(com.)
Note .1- Ratings apply for negative gate voltage or RQK = 1 kfl Devices shall not hive a positive gate voltaga concurrently with a
:?;.
J
negative voltage on the anode. Devices should not be tested with a constant current source for forward and reverse
blocking capability such that the voltage applied exceeds the rated blocking voltage.
Quality Semi-Conductors

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