ne.
i,
O
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
MJF122, MJF127
Complementary Power
Darlingtons
For Isolated Package Applications
Designed for general-purpose amplifiers and switching
applications, where the mounting surface of the device is required to
be electrically isolated from the heatsink or chassis.
Features
• Electrically Similar to the Popular TIP122 and TIP127
•
•
•
•
•
•
5.0 A Rated Collector Current
No Isolating Washers Required
Reduced System Cost
High DC Current Gain - 2000 (Min) @ I
c
= 3 Adc
UL Recognized, File #E69369, to 3500 V
RMS
Isolation
Pb-Free Packages are Available*
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
RMS Isolation Voltage (Note 1)
(t = 0.3 sec, R.H.
<
30%, T
A
= 25°C)
Per Figure 14
Collector Current - Continuous
Peak
Base Current
Total Power Dissipation (Note 2)
@T
C
= 25
D
C
Derate above 25
°C
Total Power Dissipation @ T
A
= 25°C
Derate above 25 °C
Operating and Storage Junction Temperat-
ure Range
Symbol
Value
100
100
5
COMPLEMENTARY SILICON
POWER DARLINGTONS
5.0 A, 100V, 30 W
NPN
PNP
COLLECTOR 2
COLLECTOR 2
MAXIMUM RATINGS
Unit
Vdc
Vdc
Vdc
VRMS
EMITTER 3
MJF122
EMITTER 3
MJF127
VCEO
VCB
VEB
VISOL
MARKING
DIAGRAM
4500
TO-220
Ic
IB
PD
5
8
0.12
30
0.24
Adc
Adc
W
W/°C
W
W/°C
= Assembly Location
= Year
= WorkWeek
PD
Tj, T
st
g
2
0.016
-65 to
+ 150
Ic
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 2)
Lead Temperature for Soldering Purpose
Symbol
R
(UA
Max
62.5
4.1
Unit
RBJC
°c/w
°c/w
260
°c
T
L
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Proper strike and creepage distance must be provided.
2. Measurement made with thermocouple contacting the bottom insulated
mounting surface (in a location beneath the die), the device mounted on a
heatsink with thermal grease and a mounting torque of > 6 in. Ibs.
Quality Semi-Conductors
MJF122, MJF127
ELECTRICAL CHARACTERISTICS
(T
c
=
25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (Note 3)
(l
c
= 100 mAdc, I
B
= 0)
Collector Cutoff Current
(V
CE
= 50 Vdc, I
B
= 0)
Collector Cutoff Current
(V
CB
= 100Vdc, I
E
= 0)
Emitter Cutoff Current (V
BE
= 5 Vdc, l
c
= 0)
ON CHARACTERISTICS
(Note 3)
DC Current Gain (l
c
= 0.5 Adc, VCE =
3
Vdc)
(l
c
= 3 Adc, VCE = 3 Vdc)
Collector-Emitter Saturation Voltage (lc = 3 Adc, IB = 12 mAdc)
(l
c
= 5 Adc, I
B
= 20 mAdc)
Base-Emitter On Voltage (l
c
= 3 Adc, V
CE
= 3 Vdc)
DYNAMIC CHARACTERISTICS
Small-Signal Current Gain (l
c
= 3 Adc, V
CE
= 4 Vdc, f = 1 MHz)
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 0.1 MHz)
3. Pulse Test: Pulse Width < 300 (is, Duty Cycle < 2%.
MJF127
MJF122
VCEO(SUS)
ICEO
ICBO
'EBO
Symbol
Win
Max
Unit
100
-
-
-
-
10
Vdc
IxAdc
liAdc
mAdc
10
2
HFE
v
CE(sat)
1000
-
-
2
3.5
2.5
2000
-
Vdc
Vdc
VeE(on)
-
h
fe
c
ob
4
-
-
-
300
200
PF
R
B
& R
c
VARIED TO OBTAIN DESIRED CURRENT LEVELS
D], MUST BE FAST RECOVERY TYPES, e.g.,
1N5B25 USED ABOVE I
B
•= 100 mA
MSD6100 USED BELOW I
B
-100 mA
Vcc
-30V
APPROX. —
-12V
IC/IB = 250
V, t
f
< 10 ns
DUTY CYCLE = 1%
FOR t,, AND („ D, IS DISCONNECTED
ANDV
2
= 0
FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES.
= lB2
T, = 25°C
I—
'-
0.5 0.7 1
2
3
5
0.2 0.3
10
l
c
, COLLECTOR CURRENT (AMP)
Figure 1. Switching Times Test Circuit
Figure 2. Typical Switching Times
Power technology
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