L-ConcLuctoi Lpi.oa.ucti., One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (201) 376-2922
(212)227-6005
FAX: (201) 376-8960
MRF607
The RF Line
1.75 W - 1 7 5 MHz
NPN SILICON RF POWER TRANSISTOR
RFPOWER
TRANSISTOR
NPN SILICON
. . . designed for amplifier, frequency multiplier, or oscillator ap-
plications in military, mobile, marine and citizens band equipment.
Suitable for use as output driver or pre-driver stages in VHP and
UHF equipment.
•
Specified 12.5 Volt, 175 MHz Characteristics -
Output Power = 1.75 Watts
Minimum Gain - 11 5 dB
Efficiency = 50%
Characterized through 225 MHz
•
L
E
I
R
—
B
T-P i
SEATING
PLANE
k;
t
D
G
|N
s
—x
^
t
Q
MAXIMUM RATINGS
Rating
1
Symbol
Colleclor-6
muter Voltage
I Collector Base Voltage
! Emitter-Base Voltage
Collector Current - Continuous
Total Device Dissipation <5> TQ - 75°C ( 1 }
Derate above 75°C
Slorage Temperature Range
VCEO
VCBO
VEBO
M
'V
/
H/
35
0.33
3.5
28
Watts
mW/°C
MILLIMETERS!
STYLE 1
PIN 1 EMITTER
2. BASE
3. C O L L E C T O R
INCHES
MIN
MAX
aim
A
8
MIN
889
800
6.10
MAX
940
851
6 60
0350
0315
c
0240
0016
0370
0335
0260
0021
0125
0019
0210
0031
D
E
f
Q
0406
0229
0406
483
0711
0533
3 18
533
0.009
0 190
0483
JUUiii
0864
1 02
H
J
K
L
M
p
Q
0737
n
1270
635
45° H OM
1.27
90° NOM
254
0028
0.029
0500
0250
0040
45° NOM
0050
90" » 3M
-
0.100
CASE 79 02
T039
All JEOEC notK and dinwnsions apply.
Quality Semi-Conductors
, (J
nc.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (201) 376-2922
(212)227-6005
FAX: (201) 376-8960
MRF607
ELECTRICAL CHARACTERISTICS
(T
c
=
25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(l
c
= 25 mAdc, I
B
-0)
Collector -Emitter Breakdown Voltage
( l
c
- 2 5 mAdc. V
BE
-0)
Emitter-Base Breakdown Voltage
(IE =0.5 mAdc, l
c
= 0)
Collector Cutoff Current
(V
CE
= 10
Vdc,
I
B
-Ol
V
IBR]CEO
Symbol
16
36
35
-
-
-
0.3
Vdc
Vdc
Vdc
VIBRICES
VIBRIEBO
'CEO
-
mAdc
ON CHARACTERISTICS
DC Current Gain
»C = 50 mAdc, VCE = 5.0 Vdcl
DYNAMIC CHARACTERISTICS
Output Capacitance
Cob
-
IS
pF
HFE
20
150
-
< VCB ~ !2
Vdc.
IE = 0, f = 1.0
MHz)
FUNCTIONAL TEST (Figure 11
Co m mon -E mi tter Amplifier Power Gain
<
p
cut = 1-75 W, V
cc
= 12.5 Vdc, f - 175 MHz)
Collector Efficiency
<P
out
= 1.75 W. VCG= 12.5 Vdc, f = 175MHz)
GPE
t?
11.5
-
-
dB
%
50
FIGURE 1 - 175 MHz TEST CIRCUIT SCHEMATIC
J_ +
12.5 Vdc
Tcej—C-
C1
,
<-N
V.
J
MX
"'
LI
x
<r—
\
tc
3
J
•
'
"
i
C1
C2
C3.C4
C5
C6
2.7-15 pF, ARCO 461
9.0 180 pF, ARCO 463
5.0-80 pF. ARCO 462
1000pF UNELCO
5 (IF, 25 Vdc. TANTALUM
LI
L2
L3
L4
1 Turn ff20 AWG. 3/8" ID
3 Turns «0 AWG.3/8" ID
0.22 uH Molded Choke
0.15 WH Molded Choka
with F E R R O X C U B E
56590 65 3B Bead on
ground lead
Quality Semi-Conductors
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