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NSS20500UW3

Description
PNP Transistor
File Size115KB,6 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet View All

NSS20500UW3 Overview

PNP Transistor

NSS20500UW3
20 V, 7.0 A, Low V
CE(sat)
PNP Transistor
ON Semiconductor’s e
2
PowerEdge family of low V
CE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (V
CE(sat)
) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e
2
PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
This is a Pb−Free Device
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Continuous
Collector Current
Peak
Electrostatic Discharge
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
ESD
Max
−20
−20
−7.0
−5.0
−7.0
Unit
Vdc
Vdc
Vdc
Adc
A
2
1
3
http://onsemi.com
−20
VOLTS
7.0 AMPS
PNP LOW V
CE(sat)
TRANSISTOR
EQUIVALENT R
DS(on)
50 mW
COLLECTOR
3
1
BASE
2
EMITTER
WDFN3
CASE 506AU
HBM Class 3B
MM Class C
MARKING DIAGRAM
VC M
G
1
VC = Specific Device Code
M = Date Code
G
= Pb−Free Package
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation, T
A
= 25°C
Derate above 25°C (Note 1)
Thermal Resistance,
Junction−to−Ambient (Note 1)
Total Device Dissipation, T
A
= 25°C
Derate above 25°C (Note 2)
Thermal Resistance,
Junction−to−Ambient (Note 2)
Thermal Resistance,
Junction−to−Lead #1 (Note 2)
Total Device Dissipation
(Single Pulse < 10 sec) (Notes 2, 3)
Junction and Storage Temperature Range
Operating Case Temperature (Note 1)
Symbol
P
D
R
qJA
P
D
R
qJA
R
qJL
P
Dsingle
T
J
, T
stg
T
C
Max
875
7.0
143
1.5
11.8
85
23
3.0
−55
to
+150
−55
to
+125
Unit
mW
mW/°C
°C/W
W
mW/°C
°C/W
°C/W
W
NSS20500UW3TBG
°C
°C
ORDERING INFORMATION
Device
NSS20500UW3T2G
Package
WDFN3
(Pb−Free)
WDFN3
(Pb−Free)
Shipping
3000/
Tape & Reel
3000/
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ 100 mm
2
, 1 oz copper traces.
2. FR−4 @ 500 mm
2
, 1 oz copper traces.
3. Thermal response.
©
Semiconductor Components Industries, LLC, 2012
November, 2012
Rev. 3
1
Publication Order Number:
NSS20500UW3/D
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