^zmi-L-onauctoi
!/
loaucti, LJnc.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
POWER INTEGRATED CIRCUIT
Switching Regulator 5 Amp Positive and Negative
Power Output Stages
FEATURES
PIC600
PIC601
PIC602
PIC610
PIC611
PIC612
• Designed and characterized for switching regulator applications
• Cost saving design reduces size, improves efficiency, reduces noise and RFI
• High operating frequency (to > 100kHz) results in smaller inductor-capacitor filter
and improved power supply response time
• High operating efficiency: Typical 2A circuit performance —
Rise and Fall time <75ns
Efficiency >85%
• No reverse recovery spike generated by commutating diode (See note
• Electrically isolated, 4-Pin, TO-66 hermetic case
DESCRIPTION
ESP Switching Regulator is a unique hybrid
transistor circuit, specifically designed, constructed and spe-
cified for use in high current switching regulator applications.
The designer is thus relieved of one of the most time con-
suming, tedious and critical aspects of switching regulator
design: choosing the appropriate switching transistors and
commutating diode, and empirically determining the optimum
drive and bias conditions:
The PIC600 series switching regulators are designed and char-
acterized to be driven with standard integrated circuit voltage
regulators. They are completely characterized over their entire
operating range of — 55°C to -f 125°C. The devices are enclosed
in a special 4-pin TO-66 package, hermetically sealed for high
reliability. The hybrid circuit construction utilizes thick film
resistors on a beryllia substrate for maximum thermal con-
ductivity and resultant low thermal impedance. All of the
active elements in the hybrid are fully passivated.
Application Notes U-68 and U-76 provide a detailed descrip-
tion of the hybrid circuit and design guidance for specific
circuit applications.
SCHEMATIC
3
O2
DRIVE
MECHANICAL SPECIFICATIONS
PIC600 PIC601 PIC602 PIC610 PICG11 PIC612
COMMON
4-Pin TO-66
^fj~
[]
-m— -J
.075
050
-H
.034
°
2
*
.210
.190
iy— DBIVEO)
MAX
,-jjj
: .190
l4oAA~
INPUT
'"
/ 17 X
«« i [D^^w
^—
— /
w
1
m,
V^\D
^iyp^ *"
'
r
\Ti
:|
"
'11
1
*—
^vQf/
-^
1
U
(
COMMON (2) /—^^--.152
.3*) U-4*——|
^
OUTPUT(l)
'
142
NOTES:
1. Case is electrically isolated.
2- Loads may be soldered to within
>/ib" of base provided temperature-
time exposure is less than 260"C
for 10 seconds.
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to.be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
PIC600 PIC601 PIC602 PIC610 PIC611 PIC612
ABSOLUTE MAXIMUM RATINGS
PICtM
Input Voltage, V
4
.
2
/. ,
Output Voltage, V,.
2
Drive-Input Reverrse Voltage, V
3
1
Output Current, I
Drive Current, I,
'
Thermal Resistance
ce
Junction to Case, e
c
se, 6j
Power Switch
tch
Commutating Diode
ing
Case to Ambient,
e
c
_
A
ent,
rature Range, T
c
in Temperature, T
ure Range
60V
PIC601
80V
PICG02
PICI10
—60V
PICII1
60V
5V
15A
-0.2A
80V
5V
5A
-0.2A. . .
100V
100V
-80V
5V
5A
0.2A
60V
5V
— 5A
0.2A
80V
—5V
— 5A
0.2A.
.
PIC«12
-100V
-100V
-5V
-5A
0.2A
4.0-C/W.
4.0°C/W
60.0°C/W
— 55°Cto+125"C
+ 150°C
—65°C to +150°C
ELECTRICAL SPECIFICATIONS (at 25°C unless noted)
Test
Current Delay Time
Current Rise Time
Voltage Rise Time
Voltage Storage Time
Voltage Fall Time
Current Fall Time
Efficiency (Notes 2. & 4.)
On-State Voltage (Note 3.)
On-State Voltage (Note 3.)
Dioda Forward Voltage (Note 3.)
Diode Forward Voltage (Note 3.)
Off-State Current
'4-1
Symbol
t
di
t
rl
*,,
t
ly
t
(v
tfi
„
Mm.
_
—
_
—
—
—
—
„
—
—
—
—
_
_
—
PIC6
00, 601
,602
Typ.
Max.
PIC
510,
Ell
,612
Mm.
Typ.
Max.
—
—
—
—
—
—
—
—
_
—
—
—
—
—
—
Units
20
50
30
40
75'
50
—
75
150
—
1.5
20
50
30
40
75
50
—
V
4
.,
M
V
<-l|on|
V
2
.
I(<X1)
V
Y
2 - 1
(on)
Off-State Current
Diode Reverse Current
Diode Reverse Current
1,
,
|,
;
',-2
700
50
70
85
1.0
2.5
.8
1.0
0.1
10
1.0
500
700
50
70
85
-1.0
75
150
—
-1.5
ns
ns
ns
ns
ns
ns
%
V
V
V
V
MA
/"A
*.A
/•A
Conditions
V,
n
= 25V(— 25V)
V
ml
^ 5V(-5V)
l
ou
, = 2A(-2A)
1, = — 20mA(20mA)
See Figure 2.
See notes 1., 2., 4.
1, = 2A(— 2A), 1, = — .02A(.02A)
1, = 5A(-5A), 1, = -.02A(.02A)
1,
=
2A(-2A)
l
;
= 5A{— 5A)
3.5
1.0
1.5
10
—
10
—
-2.5 -3.5
-.8
-1.0
-1.0 -1.5
-0.1
-10
-1.0
-10
—
-10
-
V, = Rated input voltage
V, = Rated input voltage, T
A
= 100°C
V,
~
Rated output voltage
V, = Rated output voltage, T
A
= lOO'C
500
Notts:
1. In switching an inductive load, the current will lead the voltage on turn^on and lag the voltage on turn-off (see Figure 2). Therefore, Voltage
Delay Time (t
DV
) = t
d
+ t
ri
and Current storage Time (t,,) == t,, + t,.
•
2. The efficiency is a measure of internal power losses and is equal to Output Power divided by Input Power. The switching speed circuit of
Figure 1, in which the efficiency is measured, is representative of typical operating conditions for the PIC600 series switching regulators.
3. Pulse test: Duration = 300ms. Duty Cycle €2%.
4. As can be seen from the switching waveforms shown in Figure 2 , no reverse or forward recovery spike is generated by the commutating
diode during switching! This reduces self-generated noise, since no current spike is fed through the (witching regulator. It also ImprovM
efficiency and reliability, since the power switch only carries current during turn-on.
MCU
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