Transistors with built-in Resistor
UNR212x Series
(UN212x Series)
Silicon PNP epitaxial planar type
Unit: mm
For digital circuits
■
Features
•
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
•
Mini type package allowing easy automatic insertion through tape
packing and magazine packing
1
0.40
+0.10
–0.05
3
1.50
+0.25
–0.05
2.8
+0.2
–0.3
0.16
+0.10
–0.06
2
(0.65)
(0.95) (0.95)
1.9
±0.1
2.90
+0.20
–0.05
■
Resistance by Part Number
•
UNR2121
•
UNR2122
•
UNR2123
•
UNR2124
•
UNR212X
•
UNR212Y
Marking Symbol (R
1
)
(UN2121)
7A
2.2 kΩ
(UN2122)
7B
4.7 kΩ
(UN2123)
7C
10 kΩ
(UN2124)
7D
2.2 kΩ
(UN212X)
7I
0.27 kΩ
(UN212Y)
7Y
3.1 kΩ
(R
2
)
2.2 kΩ
4.7 kΩ
10 kΩ
10 kΩ
5 kΩ
4.6 kΩ
10˚
1.1
+0.2
–0.1
1.1
+0.3
–0.1
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Internal Connection
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
Rating
−50
−50
−500
200
150
−55
to
+150
Unit
V
V
mA
mW
°C
°C
R
1
B
R
2
E
C
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
UNR212X
Collector-emitter cutoff current (Base open)
UNR212X
Emitter-base
UNR2121
I
EBO
V
EB
= −6
V, I
C
=
0
I
CEO
V
CE
= −50
V, I
B
=
0
Symbol
V
CBO
V
CEO
I
CBO
Conditions
I
C
= −10 µA,
I
E
=
0
I
C
= −2
mA, I
B
=
0
V
CB
= −50
V, I
E
=
0
Min
−50
−50
−1.0
−
0.1
−1.0
−
0.5
−5
−2
−1
h
FE
V
CE
= −10
V, I
C
= −5
mA
40
50
60
20
Note) The part numbers in the parenthesis show conventional part number.
Publication date: December 2003
SJH00008CED
Typ
0 to 0.1
Max
Unit
V
V
µA
µA
mA
cutoff current UNR2122/212X/212Y
(Collector open) UNR2123/2124
Forward current UNR2121
transfer ratio
UNR2122/212Y
UNR2123/2124
UNR212X
0.4
±0.2
5˚
1
UNR212x Series
■
Electrical Characteristics (continued)
T
a
=
25°C
±
3°C
Parameter
Collector-emitter saturation voltage
UNR212X/212Y
Output voltage high-level
Output voltage low-level
Transition frequency
Input resistance UNR2121/2124
UNR2122
UNR2123
UNR212X
UNR212Y
Resistance ratio
UNR2124
UNR212X
UNR212Y
R
1
/R
2
0.8
0.17
0.043
0.53
V
OH
V
OL
f
T
R
1
Symbol
V
CE(sat)
Conditions
I
C
= −100
mA, I
B
= −5
mA
I
C
= −10
mA, I
B
= −
0.3 mA
V
CC
= −5
V, V
B
= −
0.5 V, R
L
=
500
Ω
V
CC
= −5
V, V
B
= −3.5
V, R
L
=
500
Ω
V
CB
= −10
V, I
E
=
50 mA, f
=
200 MHz
−30%
200
2.2
4.7
10
0.27
3.1
1.0
0.22
0.054
0.67
1.2
0.27
0.065
0.81
+30%
−4.9
−
0.2
V
V
MHz
kΩ
Min
Typ
Max
−
0.25
Unit
V
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Common characteristics chart
P
T
T
a
250
Total power dissipation P
T
(mW)
200
150
100
50
0
0
40
80
120
160
Ambient temperature T
a
(
°C
)
2
SJH00008CED
UNR212x Series
Characteristics charts of UNR2121
I
C
V
CE
T
a
=
25°C
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
−100
I
C
/ I
B
=
10
400
h
FE
I
C
V
CE
= −10
V
−240
Collector current I
C
(mA)
−160
I
B
= −1.0
mA
−
0.9 mA
−
0.8 mA
−
0.7 mA
−
0.6 mA
−
0.5 mA
−
0.4 mA
−
0.3 mA
−
0.2 mA
−
0.1 mA
−2
−4
−6
−8
−10
−12
−10
Forward current transfer ratio h
FE
−200
300
T
a
=
75°C
−120
−1
T
a
=
75°C
25°C
200
−80
−
0.1
−25°C
−10
−100
−1
000
100
25°C
−40
−25°C
0
−1
−10
−100
−1
000
0
0
−
0.01
−1
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
12
f
=
1 MHz
I
E
=
0
T
a
=
25°C
I
O
V
IN
−10
4
V
O
= −5
V
T
a
=
25°C
−100
V
IN
I
O
V
O
= −
0.2 V
T
a
=
25°C
10
Output current I
O
(µA)
8
Input voltage V
IN
(V)
−10
3
−10
6
−10
2
−1
4
−10
−
0.1
2
0
−
0.1
−1
−10
−100
−1
−
0.4
−
0.6
−
0.8
−1.0
−1.2
−1.4
−
0.01
−
0.1
−1
−10
−100
Collector-base voltage V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
Characteristics charts of UNR2122
I
C
V
CE
T
a
=
25°C
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
−100
I
C
/ I
B
=
10
160
V
CE
=
−10
V
h
FE
I
C
T
a
=
75°C
−300
Collector current I
C
(mA)
−200
I
B
= −1.0
mA
−
0.9 mA
−
0.8 mA
−
0.7 mA
−
0.6 mA
−
0.5 mA
−
0.4 mA
−
0.3 mA
−
0.2 mA
−
0.1 mA
−10
Forward current transfer ratio h
FE
−250
120
25°C
−150
−1
T
a
=
75°C
25°C
80
−100
−25°C
40
−
0.1
−25°C
−50
0
0
−2
−4
−6
−8
−10
−12
−
0.01
−1
−10
−100
−1
000
0
−1
−10
−100
−1
000
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
SJH00008CED
3
UNR212x Series
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
24
f
=
1 MHz
I
E
=
0
T
a
=
25°C
I
O
V
IN
−10
4
V
O
= −5
V
T
a
=
25°C
−100
V
IN
I
O
V
O
= −
0.2 V
T
a
=
25°C
20
Output current I
O
(µA)
16
Input voltage V
IN
(V)
−10
3
−10
12
−10
2
−1
8
−10
−
0.1
4
0
−
0.1
−1
−10
−100
−1
−
0.4
−
0.6
−
0.8
−1.0
−1.2
−1.4
−
0.01
−
0.1
−1
−10
−100
Collector-base voltage V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
Characteristics charts of UNR2123
I
C
V
CE
Collector-emitter saturation voltage V
CE(sat)
(V)
−240
V
CE(sat)
I
C
−100
T
a
= 25°C
h
FE
I
C
200
V
CE
= −10
V
25°C
T
a
=
75°C
I
C
/ I
B
=
10
Collector current I
C
(mA)
−160
−120
I
B
= −1.0
mA
−
0.9 mA
−
0.8 mA
−
0.7 mA
−
0.6 mA
−
0.5 mA
−
0.4 mA
−
0.3 mA
−10
Forward current transfer ratio h
FE
−200
150
−1
T
a
=
75°C
25°C
100
−25°C
−80
−
0.1
50
−40
−
0.2 mA
−
0.1 mA
−25°C
−10
−100
−1
000
0
−1
−10
−100
−1
000
0
0
−2
−4
−6
−8
−10
−12
−
0.01
−1
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
24
f
=
1 MHz
I
E
=
0
T
a
=
25°C
I
O
V
IN
−10
4
V
O
= −5
V
T
a
=
25°C
−100
V
IN
I
O
V
O
= −
0.2 V
T
a
=
25°C
20
Output current I
O
(µA)
16
Input voltage V
IN
(V)
−10
3
−10
12
−10
2
−1
8
−10
−
0.1
4
0
−
0.1
−1
−10
−100
−1
−
0.4
−
0.6
−
0.8
−1.0
−1.2
−1.4
−
0.01
−
0.1
−1
−10
−100
Collector-base voltage V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
4
SJH00008CED
UNR212x Series
Characteristics charts of UNR2124
I
C
V
CE
T
a
=
25°C
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
−100
I
C
/ I
B
=
10
h
FE
I
C
400
V
CE
= −10
V
−300
Collector current I
C
(mA)
−200
−150
I
B
= −1.0
mA
−
0.9 mA
−
0.8 mA
−
0.7 mA
−
0.6 mA
−
0.5 mA
−
0.4 mA
−
0.3 mA
−
0.2 mA
−
0.1 mA
−10
Forward current transfer ratio h
FE
−250
300
T
a
=
75°C
200
25°C
−25°C
100
−1
T
a
=
75°C
25°C
−100
−
0.1
−25°C
−10
−100
−1
000
−50
0
0
−2
−4
−6
−8
−10
−12
−
0.01
−1
0
−1
−10
−100
−1
000
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
24
f
=
1 MHz
I
E
=
0
T
a
=
25°C
I
O
V
IN
−10
4
V
O
= −5
V
T
a
=
25°C
−100
V
IN
I
O
V
O
= −
0.2 V
T
a
=
25°C
20
Output current I
O
(µA)
16
Input voltage V
IN
(V)
−10
3
−10
12
−10
2
−1
8
−10
−
0.1
4
0
−
0.1
−1
−10
−100
−1
−
0.4
−
0.6
−
0.8
−1.0
−1.2
−1.4
−
0.01
−
0.1
−1
−10
−100
Collector-base voltage V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
Characteristics charts of UNR212X
I
C
V
CE
Collector-emitter saturation voltage V
CE(sat)
(V)
−240
T
a
=
25°C
−100
V
CE(sat)
I
C
I
C
/ I
B
=
10
h
FE
I
C
240
V
CE
= −10
V
Collector current I
C
(mA)
−160
I
B
= −1.6
mA
−1.4
mA
−1.2
mA
−1.0
mA
−
0.8 mA
−
0.6 mA
−
0.4 mA
−
0.2 mA
−10
Forward current transfer ratio h
FE
−200
200
160
T
a
=
75°C
25°C
80
−25°C
−120
−1
T
a
=
75°C
25°C
– 25°C
120
−80
−
0.1
−40
40
0
0
−2
−4
−6
−8
−10
−12
−
0.01
−1
−10
−100
−1
000
0
−1
−10
−100
−1
000
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
SJH00008CED
5
Integrated technical exchanges
京公网安备 11010802033920号
EEWORLD
