<z2\E,(.\T I
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
,
LJnc.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
RFM12N08L, RFM12N10L, RFP12N08L, RFP12N10L
N-Channel Logic Level
Power Field-Effect Transistors (L
2
FET)
12 A, 80V and 100V
ros(on): 0.2 n
Features:
•
Design optimized tor 5 volt gate drive
• Can be
driven directly from Q-MOS, N-MOS, TTL Circuits
•
Compatible with automotive drive requirements
•
SOA is power-dissipation limited
•
Nanosecond switching speeds
•
Linear transfer characteristics
•
High input impedance
•
Ma/ority carrier device
N-CHANNEL ENHANCEMENT MODE
The RFM12N08L and RFM12N10L and the RFP12N08L and
RFP12N10L' are n-channel enhancement-mode silicon-gate
power field-effect transistors specifically designed for use
with logic level (5 volt) driving sources in applications such
as programmable controllers, automotive switching, and
solenoid drivers. This performance is accomplished through
a special gate oxide design which provides full rated con-
duction at gate biases in the 3-5 volt range, thereby facilitat-
ing true on-off power control directly from logic circuit
supply voltages.
The RFM-series types are supplied in the JEDEC TO-
204AA steel package and the RFP-series types in the
JEDEC TO-220AB plastic package.
Because of
space
limitations branding (marking) on type
RFP12N08L isFl2N08L and on typeRFP12N10L is
F12N10L.
TERMINAL DESIGNATIONS
RFM12N08L
RFM12N10L
JEDEC TO-204AA
RFP12N08L
RFP12N10L
p SOURCE
DRAIN _»
(FLANGE)
o
=!— i
JEOEC TO-220AB
MAXIMUM RATINGS,
Absolute-Maximum Values (7>25° C):
RFM12N08L
DRAIN-SOURCE VOLTAGE
• Voss
DRAIN-GATE VOLTAGE (R
,= 1 MO) .. .. Vow
GATE-SOURCE VOLTAGE
. . V<J8
DRAIN CURRENT. RMS Continuous
. . ID
Pulsed
lou
P
T
POWER DISSIPATION @ ^=25° C ...
^25-C
Derate above T
C
-
T
25° C
OPERATING AND STORAGE
TEMPERATURE
T,, T.
80
80
RFM12N10L
100
100
RFP12NOSL
80
80
RFP12N10L
100
100
V
V
A
A
W
±10
12
30
rs
0.6
75
0.6
60
0.48
60
0.48
W/°C
-55 to+150
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
RFM12N08L, RFM12N10L, RFP12N08L, RFP12N10L
ELECTRICAL CHARACTERISTICS,
At Case Temperature (Tc)=25°C unless otherwise specified.
LIMITS
CHARACTERISTIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
SYMBOL
TEST
CONDITIONS
I
D
='I mA
VGS=O
Vos'Vos
I
0
=1
mA
V
DS
'=65 V
Vos =80 V
Tc=125°C
V
DS
:=65 V
RFM12NML
RFP12N08L
MIN.
MAX.
BV
DDS
80
1
—
2
1
RFM12N10L
RFP12N10L
MAX
MIN.
100
—
UNITS
V
V
Vos(th)
loss
1
2
1
—
—
—
—
—
4.0
—
—
—
I5(typ)
70(typ)
.100(typ)
80(tygL
—
50
100
1.2
3.3
0.2
-
900
325
170
50
150
130
150
1.67
—
—
—
—
—
4.0
—
—
—
15(typ)
70(typ)
100(typ)
80(typ)
—
—
50
100
1.2
1*
nA
Gate-Source Leakage Current
Drain-Source On Voltage
less
V
DS
(on)'
V
DS
:=BO V
V
as
=±10 V
V
M
*0
Static Drain-Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse-Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Thermal Resistance
Junction-to-Case
ros(on)"
g»
a
C
ira
c^
c_
Won)
t,
td(Off)
t,
RAc
lo= 6 A
V
G5
=5 V
I
D
=12A
V
M
=5V
I
D
= 6 A
V
QS
=5 V
V
DS
;=10V
lo='6 A
Vos-25 V
V
GS
=0 V
f=1MHz
V
DO;
=50 V
I
D
=6A
f(
il
^=
<x
>
Ro.=6,25 O
V
GS
=5 V
RFM12N08L,
RFM12N10L
RFP12N08L,
RFP12N10L
V
3.3
0.2
-
900
325
170
50
150
130
150
1.67
n
mho
pF
ns
—
2.083
2083
"C/W
"Pulsed: Pulse duration = 300ps max., duty cycle
-
2%.
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
LIMITS
RFM12N08L
RFM12N10L
RFP12N08L
,
RFP12N10L
MAX.
MIN.
MAX.
MIN.
—
1.4
—
1.4
150(typ)
150(typ)
CHARACTERISTIC
Diode Forward Voltage
Reverse Recovery Time
SYMBOL
TEST
CONDITIONS
l
SD:
--6 A
I
F
=4A
di
F
/dt=lOOA/0S
UNITS
V
VSD
t,,
ns
•Pulse Test: Width <
3OOfJS,
duty cycle < 2%.
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